BV 1500 STS Search Results

STS Bv 1500

Contextual Info: BV 8, BV 12, BV 16 High Voltage Si-Rectifier Si-Hochspannungs-Gleichrichter Nominal current Nennstrom 350 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 7000. 15000 V Plastic case Kunststoffgehäuse 0 6.3 x 21 [mm] Weight approx. Gewicht ca.

Contextual Info: BV 4, BV 6 Si-Hochspannungs-Gleichrichter High Voltage Si-Rectifier 50 mA Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 3 000. 5 000 V Plastic case Kunststoffgehäuse D O -15 Weight approx. Gewicht ca. 0.4 g Plastic material has UL classification 94V-0

ABVZ

Abstract: 1N1742 1N1742A 20C6
Contextual Info: MIL-S-19500/298 21 Ocmbor 1964 ● MILITARY SEMICONDUCTOR SPECIFICATION DEVfCE, TYPE 1. USAF DIODE, SILICON 1N1742A SCOPE 1.1 Oescri Ion. This specification covers voltxe-re + erence &ode, and is in accordance ehalf not be used for new design. 1.2 Madmum

bv 1500 sts

Abstract: TZ40 TZ150A TZ45A TZ78 TZ180 tz40a TZ17 TZ17A TZ18
Contextual Info: 8 1349 76 S E M ICON INC, S T-SEMICOND T7 D 97D 00584 “T - II-Ï3 » e | fll34T7b DD0DSA4 5 | ~ SILICON TRANSIENT VOLTAGE SUPPRESSORS Peak Pulse Power 15,000 Watts ST-S Part No. Revene Stand-OH Voltage Not* 1 Vr Volt» TZ17 TZ17A TZ18 TZ18A TZ20 TZ20A

1N1742A

Abstract: 1N1742 MIL-S-19500 1N742A 1N742 MIL marking diode military part marking symbols origin semiconductor diode
Contextual Info: NIL SPECS i c | □□□Q125 00D3fl47 5 | M I L - S - 1 9 5 0 0 / 2 9 8 U SA F I NOTICE I IOF VALIDATION l NOTICE 1 17 AUGUST 1987 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N742A MIL-S-19500/298(USAF) and Amendment 3, dated 24 July 1968, have been reviewed &

FQA85N06

Abstract: 0028126
Contextual Info: QFET N-CHANNEL FQA85N06 FEATURES BVqss = 60 V Advanced New Design R d s ON = 0 0 1 Avalanche Rugged Technology lD = 100A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 86nC (Typ.)

H124

Abstract: DSUB111 M33 TRANSISTOR RB1010 DIOD003 H124-H125 ws106 T08I3 BF113 H125
Contextual Info: AN1598/D H124, 125, 350−352 Translator I/O SPICE Modelling Kit Prepared by: Debbie Beckwith Andrea Diermeier ECL Applications Engineering http://onsemi.com APPLICATION NOTE This application note provides the SPICE information necessary to accurately model system interconnect situations for

DSUB111

Abstract: H124 PNT02 H124-H125 XR2444 AN1598 npn TTL LOGIC pspice model designing with mecl 10,000 H352 H351
Contextual Info: AN1598 Application Note H124, 125, 350-352 Translator I/O SPICE Modelling Kit Prepared by Debbie Beckwith Andrea Diermeier ECL Applications Engineering This application note provides the SPICE information necessary to accurately model system interconnect situations for designs which utilize the translator circuits of

SK1512

Abstract: 10i2 2SK1512 SC-65
Contextual Info: rw r 4£| \jyjc./ u i i i»w 1. Scope This sp ecifies Fuji 2 . Outline I Construction B ) Application I ) Outview power MOSFET 2 S K 1 5 1 2 - 0 1 D N-channel enhancement mode power MOSFET for switching T0-3P MK5C25623) 3 . Absolute maximum ratings at Tc=25 *C (unless otherwise specified)

U6302

Abstract: 1.5K82 1N4295 1.5K9.1A wcx 332 S860 sk47a ke200a IM270 1K6276A
Contextual Info: flICRÔSEMI CORP ESE D • bllSflhS 0001170 1 . jf£ \ T 'ih Z 3 Microjsemi Corp. ' Tfì9<fiod6e*p6f& SANTA ANA. CA SCOTTSDALE,AZ For more information calli 602 941-6300 ' or » ri 4 e l f B f i O t h r u , «*1*1 liO I V B O iO L IIIU • I FEA TU R ES

ASN100

Abstract: IXSH45N100 bv 1500 sts
Contextual Info: Low VCE sat IGBT IXSH/IXSM 45N100 V CES ^C25 v CE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES ^ Vco„ Td = 25°C to 150°C; RGE = 1 Mi2 = 25°C to 150°C V0ES VGEM ^C25 1000 V 1000 V Continuous ±20

8205

Contextual Info: S T S 8205 S amHop Microelectronics C orp. Nov. 19 2004 ver 1.1 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( mW ) Max R ugged and reliable.

HEXFETs FETs

Abstract: h184
Contextual Info: D a ta INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHG7HO N-CHANNEL RAD HARD 100 Volt, 0.700, RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown

STS Bv 1500 current transformers

Abstract: Wiring Diagram thermostat NC 40 NC 90 ACE850 V/STS Bv 1500 current transformers EGX300 umi x22
Contextual Info: Electrical network protection Sepam series 20, series 40, series 60, series 80 Digital protection relays Catalogue 2011 Sepam series 20 Sepam series 40 Sepam series 60 Sepam series 80 General Content Range description 1 Sepam series 20 and Sepam series 40

H30P

Contextual Info: # IE E E Standard Microcomputer System Bus IE E E D ecem b er 29, 1 9 8 3 Published by The Institute of Electrical and Electronics Engineers, Inc 345 East 47th Street, New York, NY 10017, USA SH 09001 IEEE Standard Microcomputer System Bus Sponsor Standards Committee of the

MN1554

Abstract: ram tite 45 MN1551 MN1500 MN1550 pshxy
Contextual Info: PANASONIC INDL/ELEK -CIO 72 Î>É"| 1^33052 DOOSñt.1 3 |~~ MN 1500 Family— 5 MN 1554 MN 1550 Series DD 'J £ a —$>(4-Blt) 6932852 PANASONIC 72C INDL»ELECTRONIC 05861 MN1 554(M N 1 5 5 0 Seríes igttffê • CMOS 4 M'V I- l f - y y - T O n a y ü a - J

smd transistor JE

Abstract: 302401
Contextual Info: W fjim H E W L E T T wLKM P A C K A R D Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers Technical Data 6N140A* HCPL-675X 83024 HCPL-570X HCPL-177K 5962-89810 HCPL-573X HCPL-673X 5962-89785 5962-98002 *See m atrix for available extensions.

Contextual Info: WL¡m H EW LETT wLEM PACKARD Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers Technical Data 6N140A* HCPL-675X 83024 HCPL-570X HCPL-177K 5962-89810 HCPL-573X HCPL-673X 5962-89785 5962-98002 *See m atrix for available extensions. Features • Dual Marked w ith Device

smd transistor 1yc

Abstract: smd tr 1yc smd marking ACH marking code yc SMD Transistor 8302401E marking code EA SMD Transistor 8302401EA A13j 6n140a
Contextual Info: Wißt mLfïM Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers Technical Data HEWLETT PACKARD 6N140A* HCPL-675X 83024 HCPL-570X HCPL-177K 5962-89810 HCPL-573X HCPL-673X 5962-89785 5962-98002 *See m atrix fo r available extensions. Features • D ual M arked w ith D ev ice

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

n627

Abstract: AFAA TRANSISTOR MC 3041 TA1705 U028 2N744 1G21
Contextual Info: MILrS- 19500/273A NAVY 21 March 1566_ SUPERSEDING M IL-S-19500>^73(NAVY) 18 November 1063 (finn fi 9.\ v*“/ MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR TYPE TYPE 2N744 i SCOPE 1.1 D escription. - This specification covers the .detail-requirem ents for an NPN, silicon, high-speed

Contextual Info: EL2166C F e a tu r e s G e n e ra l D e sc r ip tio n • 110 M H z 3 d B b a n d w id th A y = + 2 • 115 M H z 3 d B b a n d w id th (A y = + 1 ) • 0.01% d iffe re n tia l g ain , R l = 500ft • 0.01° d iffe re n tia l p h ase, R l = 500H • L ow su p p ly c u rre n t, 7.5 m A

Contextual Info: EL2260C/EL2460C Dual/Quad 130 MHz Current Feedback Amplifiers H GH PERFORMANCE ANALOG INTEGRATED CIRCUITS Features General Description • 130 M H z 3 dB b andw idth Av = + 2 • 180 M H z 3 dB bandw idth (A v = + 1 ) • 0.01% differential gain, R l = 500ft

relais datenbuch siemens

Abstract: siemens datenbuch triac zu 103 ma BSS97 diode sg 5 ts Scans-048 BUZ23 s489 DSAGER00059 Transistor Datenbuch
Contextual Info: SIEMENS SIPMOS Kleinsignaltransistoren Technische Beschreibung Ausgabe September 1986 Inh alt 1. Einleitung 5 2. Technologie 5 3. Schaltverhalten 6 4. D atenblattangaben 8 4.1 4.2 4.3 Drainstrom lD Gate-Schwellenspannung VGS th Temperaturabhängigkeit 8 8