BV 726 B Search Results

Contextual Info: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information D DS ON (max) -16.5V 1 . 50 . JÎ BV DSS / BV DGS Order Number / Package V GS(th) -1.25A (max) TO-92 SO-8 Die -1.0V LP0701N3 LP0701LG LP0701ND Features Advanced MOS Technology

BV 726 C

Abstract: BV 724 C
Contextual Info: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BVDGS Order Number / Package DS ON '□(ON) (max) (min) VGS(ttl) (max) TO-92 SO-8 Die 1.5U -1.25A -1.0V LP0701N3 LP0701LG LP0701ND D -16.5V Features Advanced MOS Technology

BV 726

Abstract: mosfet analog switch D129 D125
Contextual Info: These drivers were designed to function as a level shifter and buffer between low level logic and the control gate of FET analog switches. Output voltage ratings are as high as 50V. U T P U T S OFF Level v out OFF Basic Part Number (Note 2) I N P U T S D125

S-0150-01

Abstract: HYPERTAC CONTACT PIN 18024 S-0250-01 HYPERTAC mdm S-0350-01 SH463 S0150.01 extraction tool S0150-01 a2700 AF8 CRIMPING TOOL
Contextual Info: L Series Modular Connectors 5.50 8.25 11.00 11.00 A Therefore a “step” is defined as the length used by each assembled element. - An elementary step is defined as 5.50 mm - The letter “A” is the sum of the dimensions of the contact elements. Hypertac modular connectors employ a do-it-yourself

PEG 0B

Contextual Info: 6 NOTES; 1 L CARD 78962 SLOT 3 1 ACCEPTS .0 5 0 +.0 0 4 / - .0 0 3 I 2 P .C . BO A RD S M EA SU RED O VE R P .C . PADS . 2. PRODUCT S P E C P S - 7 8 9 5 4 A P P L I E S 3. CEN TER PEG IS AN IN T E R F E R E N C E P I T TO PCB UN LES S NOTED ON THE DWG. ( A P P L I C A B L E ONLY IP PA RT HAS A CEN TER PEG F EA T U R E)

C495 transistor

Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

DF412

Abstract: DF320 DF320A SILICONIX df412 D125 D129 D169 DF322 DF328 dual MOS ANALOG SWITCHES
Contextual Info: These drivers were designed to function as a level shifter and buffer between low level logic and the control gate of FET analog switches. Output voltage ratings are as high as 50V. U T P U T S OFF Level v out OFF Basic Part Number (Note 2) I N P U T S D125

C736

Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

Contextual Info: 4 DE D E3 34^=1738 0 0 0 1 1 1 0 A ^ S E N I FASCO INDS/ SENISYS r -^ 1 ^ 7 i Array Chips — Detectors Clairex offers a broad range of custom and stock dual and multichannel chips and arrays. Chips may be selected for special electrical requirements, i.e.,

C495 transistor

Abstract: transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent
Contextual Info: 7 Metal Can High Current NPN Am plifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV Case BV BV hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75

RA0812

Abstract: 1251W Tab187
Contextual Info: Powered by HR 1251W 12V 51W HR 1251W is specially designed for high efficient discharge application. Its characteristics are high energy density, small footprint and high discharge efficiency. It can be used for more than 260 cycles at 100% discharge in cycle

Contextual Info: Powered by HR 1290W 12V 90W HR 1290W is specially designed for high efficient discharge application. Its characteristics are high energy density, small footprint and high discharge efficiency. It can be used for more than 260 cycles at 100% discharge in cycle

Contextual Info: Powered by HR 1290W 12V 90W HR 1290W is specially designed for high efficient discharge application. Its characteristics are high energy density, small footprint and high discharge efficiency. It can be used for more than 260 cycles at 100% discharge in cycle

hrl 12330W

Abstract: BV 726 C 330W
Contextual Info: Powered by HRL 12330W 12V 330W HRL 12330W is specially designed for high efficient discharge application. Its characteristics are high energy density, small footprint and high discharge efficiency. It can be used for more than 260 cycles at 100% discharge in cycle service, up to 10

bv32

Abstract: G.729.1 G.729D BV16 BroadVoice16 hindi ma MA HINDI thyssen pesq G722
Contextual Info: THE BROADVOICE SPEECH CODING ALGORITHM Juin-Hwey Chen and Jes Thyssen Broadcom Corporation, Irvine, California, USA ABSTRACT This paper describes the BroadVoice speech coding algorithm, which has been standardized as PacketCable , SCTE®, and ANSI standards for VoIP cable telephony. The BroadVoice family

TN0624N2

Contextual Info: ^ S u p e rte x in c . T N 06C Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BVdss/ R DS ON ' d (ON) V GS(th) b v dgs (m ax) (min) (max) TO-39 TO-92 200V 6S i 1.0A 1.6V

TN0535

Contextual Info: - J / i r. ^ r L TN0535 TN0540 z N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON V (max) (min) (max) TO-92 DICE+ 350V 22Q 250mA 2.0V TN0535N3 TN0535ND 400V 22Q 250mA 2.0V TN0540N3 TN0540ND g S(U i ) Order Number / Package

D-70569

Contextual Info: IBM Sales and Distributor Offices European Manufacturer’s Representatives North American Distributors BltieMicroelectronics Ltd. Albion House, Victoria Promenade Northampton, NN1,1HH United Kingdom Tel: 44-604-603310 Fax: 44-604-603320 Marshall Industries

pqhxn

Abstract: hn 729
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diac SBS 14

Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
Contextual Info: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation

Contextual Info: MO TO RO LA SC X ST RS /R F bflE D • b 3 b ? S S H DGiöfiB? SSb ■ MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES RDS(on) = °-80 OHM

NA51 transistor

Abstract: na52 transistor BV 726 C 1 Converter NA52W pnp NA52W BV 726 C Converter na51 npn BV 726 C na52 power transistor na51
Contextual Info: NATL SEMICOND {DISCRETE} 6501130 NATL CL Z CL CÎ ~2ö SEMICOND, DE I tS0113Q 0035573 T 28C DISCRETE CT1 National ÉSA Semiconductor 35573 - f - 3 in < z r\ Z Q. 10 < NA51 (NPN) 3.5Am p complementary pow er transistors NA52(PNP) features PH packages and lead coding

BV 726 B

Contextual Info: Module no:3009118 LabelId:3009118 Operator:Phoenix 18:55:00, Donnerstag, 28. Juni 2001 UKH 50 Terminal width 20.0 IEC rigid 2 [mm ] solid flexible stranded AWG I U [A] [V] IEC 947-7-1 16-50 25-50 6-0 150 1000 EN 50 019 * 16-50 25-50 – 135 726 * Certificate no.: KEMA Ex-95.D.4411U

KEMA

Abstract: BV 726 B IEC 947-7-1 terminal block IEC 947-7-1 2.5 mm terminal block
Contextual Info: Module no:3010217 LabelId:3010217 Operator:Phoenix 18:55:57, Donnerstag, 28. Juni 2001 UKH 240 Terminal width 36.0 IEC 2 [mm ] rigid solid flexible stranded AWG I U [A] [V] IEC 947-7-1 70-240 70-240 00-500 415 1000 EN 50 019 * 70-240 70-185 – 350/300 726