BV 73 Search Results

Contextual Info: M ulti-Contact Buchsen S o ckets BuchsenIB . BV mit Bajonettverriegelung Sockets IB. BV with bayonet locking Buchsen vom Typ IB . BV sind federnde Buchsen mit Bajonettverriegelung. IB . BV-Buchsen eignen sich zum Anschluss von Leitern mit Kabelschuh, zum Anschrauben an Stromschienen und Kontaktblocke Oder als Aufbaubuchse zum Einbau

Contextual Info: M ulti-Contact Einbaudosen Panel receptacles Prises a encastrer Buchsen M D /B . BV mit Bajonettverriegelung und Gewindeanschluss Sockets M D /B . BV w ith bayonet locking and threaded stud Douilles M D /B . BV avec verrouillage a baton nette et embout

C495 transistor

Abstract: transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent
Contextual Info: 7 Metal Can High Current NPN Am plifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV Case BV BV hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75

C736

Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

Contextual Info: LP0701 Çh Supertex inc. Low'Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BV “ *DGS D max (min) VGS(th> (max) 1.5£2 -1 ,25A -1.0V DS(ON) -16.5V ^D(OH) Order Number / Package TO-92 SO-8 Dice LP0701N3 LP0701 LG LP0701ND

C495 transistor

Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

Contextual Info: Sockets, insulated, locking, 250, 400 and 1000 Amps Sockets MD/B.BV with bayonet locking and threaded stud MD/B.BV Panel receptacles are insulated sockets designed for flush mounting in housings and panels. Mating plugs with suitable locking devices can be locked into the

P6KE10C

Abstract: P6KE12A P6KE22 P6KE10 P6KE10A P6KE10CA P6KE11 P6KE11A P6KE11C P6KE11CA
Contextual Info: Max. Clamping Voltage @ lpp Max. Peak Pulse Current Max. Voltage Temp. Variation Of Bv Type Number Reverse Standoff Voltage UNI (Bl) VR (V) Min (V) Max (V) It (mA) IR (uA) Ve (V) Ipp (A) Breakdown Voltage BV Volts @ lt O Type Number O Max. Reverse Leakage

Contextual Info: LP0701 1 ni« ThrashnM P-Channel Enhancement-Mode Lateral MOSFET BV DSS / BV DGS D DS ON (max) -16.5V If Ordering Information 1.5Q -1.25A Order Number / Package V GS(th) (max) TO-92 SO-8 Dice -1.0V LP0701N3 LP0701LG LP0701ND WÂ Features Advanced MOS Technology

7168-m

Abstract: M165-35S A/M165-35S
Contextual Info: Doc – Nr /Doc – No. MR3 400/24 Seiten / Sheets: Drossel - Datenblatt Choke – data sheet 1/2 Typennummer / Identification BV-Nr BV-No. MR3 400/24 Drosselart Type of reaktor 3~ Motor Reactor Kundennr. Customer Id.-No. - Kernform Core type 3UI 60/31 Material Nr.

7168-m

Contextual Info: Doc – Nr /Doc – No. MR3 400/18 Seiten / Sheets: Drossel - Datenblatt Choke – data sheet 1/2 Typennummer / Identification BV-Nr BV-No. MR3 400/18 Drosselart Type of reaktor 3~ Motor Reactor Kundennr. Customer Id.-No. - Kernform Core type 3UI 60/31 Material Nr.

NPN CBO 40V CEO 25V EBO 5V

Abstract: MMST8598
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.

8F SOT-23 PNP on

Abstract: 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor
Contextual Info: Discrete POWER & Signal Technologies Surface Mount Diodes Computer Diodes by Descending BV LEADLESS GLASS PACKAGE Device No. Package No. BV (V) Min IR (nA) Max @ VR VF (V) (V) Min C trr (mA) (pF) Max (ns) Max 1 10 4 0.72 5 @ Max IF Test Conditions Process

Contextual Info: NO. PART > P pri*to d* e ™ CD “™ to * "P ™ * * * "" PCI ELECTROMCS bv 2 O , Property of o FCI ELECTRONICS. Copyright FO ELECTRONICS bv Al righto ptrlctly reserved. Reproduction Of toauo to third portles In ony for •hotover to not permitted without written outhorttv from tho proprietor.

4525

Abstract: 1SR139-600 M3796
Contextual Info: SPICE PARAMETER 1SR139-600 by ROHM FAE Div. * D1SR139-600 D model * Date: 2008/08/21 .MODEL D1SR139-600 D + IS=735.79E-12 + N=1.6491 + RS=33.514E-3 + IKF=8.4525 + CJO=18.459E-12 + M=.37966 + VJ=.4742 + ISR=100.53E-12 + NR=3.5000 + BV=750 + TT=1.2984E-6

PCI express PCB footprint

Abstract: datasheet of BGA Staggered pins "differential via" via antipad pitch Geest UM5000
Contextual Info: DesignCon 2005 Connector footprint optimization enables 10 Gb+ signal transmission Jan De Geest, PhD Winnie Heyvaert Stefaan Sercu, PhD Dana Bergey FCI Communications, Data, Consumer Division FCI ’s-Hertogenbosch BV Victorialaan 1 5213 JG ’s-Hertogenbosch

Contextual Info: QFET N-CHANNEL FQB7N20, FQI7N20 FEATURES BV qss = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ.

Contextual Info: QFET N-CHANNEL FQB5N60, FQI5N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ.

SL1515HE

Abstract: 1N8623 SD090SB45 SHD5181 sh086 SHD5193 SHD5183B SHD5303 SHD5183A SHD5183
Contextual Info: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision Index bv Part Number Part Number 1N3611 1N3612 1N3613 1N3614 1N3957 1N4245 1N4246 1N4247 1N4248 1N4249 1N4942 1N4944 1N4946 1N4947 1N4948 1N5186 1N5187 1N5188 1N5190 1N5415 1N5415US 1N5416 1N5416US

IRF531

Abstract: R531
Contextual Info: SUPERTEX INC "ül Ï ^ | û ?732TS 00D15Û4 3 1 ~ T- Ss^us IRF531 R531 P relim in a ry N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information VosS / BV dqs 60V Order Number / Package ^DS ON *D(ON) (max) (min) TO-39 TO-92 0.18£i 12.0A

fi324

Abstract: I-226
Contextual Info: Specifications *six4 # Model $ Carbon film variable resistor i3P4ilfBf% Customer Specification Number : @P4i#*si$5 Customer Part Name Wk3a"af% Customer Yart Number %+i85$5 TOCOS Part Name wines% TOCOS Specification Number RY -7 7 2 1 ! S ED #I Siened bv

VDE 0660. 107

Abstract: norgren 18D VDE 0660 iec 947 NBR 70 "hydraulic Pressure Switches" Herion herion solenoid Pressure Switches VDE 0660 u 088224
Contextual Info: Pressure Switches Series 18D Pneumatic + Hydraulic Pressure Switches With Shipping Approvals ● Approved by: GL Germanischer Lloyd, Lloyd’s Register of Shipping, BV Bureau Veritas, DNV Det Norske Veritas ● Microswitches with goldplated contacts ● High number of switching cycles

A68QCU770X

Abstract: PICTURE TUBE A68QCU770X51 6550 Tube LG-Philips A68QCU770X electron gun CRT philips color television picture tube pin voltage philips colour television picture tube pin voltage CATHODE RAY TUBE CRT TV electron gun
Contextual Info: ELECTRON DISPLAY TUBE DIVISION, LG.Philips Displays FOR MESSRS : SPECIFICATION FOR COLOR PICTURE TUBE A68QCU770X51 ▶ 29” Pure Flat Single Focus ◀ Bv = +0.35 ± 0.05[Gauss] Bh = 0.30 ± 0.05[Gauss] ISSUED DATE : DEC. 5, 2002 PROPOSED BY : APPROVED BY :

1n6415

Abstract: 1N6408 VOLTAGE SUPPRESSOR marking BV
Contextual Info: DIGITRON SEMICONDUCTORS 1N6402-1N6456A 600W TRANSIENT VOLTAGE SUPPRESSOR UNIDIRECTIONAL MAXIMUM RATINGS Parameter Value Peak power dissipation @ 25°C 600W Less than 1 X 10-12 seconds Tclamping volts to BV min Operating and storage temperature range -55 to +175°C