BV SMD Search Results

STS Bv 1500

Contextual Info: BV 8, BV 12, BV 16 High Voltage Si-Rectifier Si-Hochspannungs-Gleichrichter Nominal current Nennstrom 350 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 7000. 15000 V Plastic case Kunststoffgehäuse 0 6.3 x 21 [mm] Weight approx. Gewicht ca.

transistor A25 SMD

Abstract: rl 254 diode
Contextual Info: Photocoupler SMD/DIP Type High Isolation Voltage Single Transistor Type Multi Photocoupler Series PS2561-1,-2, PS2561L-1,-2 Features High isolation voltage BV = 5 000 Vr.m.s.: standard products BV = 3 750 Vr.m.s.: VDE0884 approved products Option High collector to emitter voltage (VCEO = 80 V)

Contextual Info: BV 4, BV 6 Si-Hochspannungs-Gleichrichter High Voltage Si-Rectifier 50 mA Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 3 000. 5 000 V Plastic case Kunststoffgehäuse D O -15 Weight approx. Gewicht ca. 0.4 g Plastic material has UL classification 94V-0

TLP121-4

Abstract: tlp120 smd TLP112A
Contextual Info: Mini Flat Photocouplers SMD Photocouplers Transistor Output_ F7 Collector Breakdown Votage V(BR)CEO(V) Current Transfer Ratio Type No. Pin Configuration Features TLP121 4 ch Type TLP120 AC input £ TLP120-4 GB BV (mA) (V) 80 100 600 100 1200 200

transistor A25 SMD

Abstract: smd transistor H-R
Contextual Info: Photocoupler SMD/DIP Type High Isolation Voltage Single Transistor Type Multi Photocoupler Series PS2501-1,-2,-4, PS2501L-1,-2,-4 Features High isolation voltage BV = 5 000 Vr.m.s. High collector to emitter voltage (VCEO = 80 V) High-speed switching (tr = 3

p-channel mosfet

Abstract: 2N7522 p-channel 200V 2n752 iGSS 80 nA Vgs 0v
Contextual Info: Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 2N7522 200Volt, 0.505 Ω , RAD Hard MOSFET Package: SMD-0.5 R5 Product Summary Hex Size Technology BV DSS RDS on ID 3 RAD Hard -200V 0.505 Ω -8.0A Absolute Maximum Ratings

2N7524

Abstract: smd 58a transistor 6-pin Zero-Gate Voltage Drain Current 60-VOLT 2n752 mosfet nA idss
Contextual Info: Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 2N7524 60 Volt, 0.015 Ω , RAD Hard MOSFET Package: SMD-2 R5 Product Summary Hex Size Technology BV DSS RDS on ID 6 RAD Hard -60V 0.015 Ω -75*A Absolute Maximum Ratings

2N7519

Contextual Info: Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 2N7519 30 Volt, 0.035 Ω , RAD Hard MOSFET Package: SMD-0.5 R5 Product Summary Hex Size Technology BV DSS RDS on ID 3 RAD Hard -30V 0035 Ω -22*A Absolute Maximum Ratings

1ff TRANSISTOR SMD MARKING CODE

Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
Contextual Info: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369

556cn

Abstract: MMQA20VTI MMQA20VT1 TA525 motorola diode smb
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document bv MMQA5V6T1/D DATA — MMQA5V6TI 5.6 Volt SC=59 Quad Monolithic Common Anode I ~ Transient Voltage Suppressor for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications

MT 6236

Abstract: Transistor WIG 10NO2Z woy transistor AN569 zener diod MARKING S04 diod zener
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document bv MMSF1ONO22D DATA DesignerSTM Data Sheet - I I Medium Power Surface Mount Products TMOS Single N-Channel with Monolithic Zener ESD Protected Gate EZFETSTM are an advanced series of power MOSFETS which

*14315 transistor

Abstract: MMDF3P03HDR2 AN569 MMDF3P03HD dual slope adc motorola notes FET MOSFET transistor ""
Contextual Info: MOTOROLA SEMICONDUCTOR Advance —. TECHNICAL Order this document bv MMDF3P03HD/D DATA Information ~ Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect ~ansistors Dual HDTMOS devices are an advanced series of power MOSFETS which utilize Motorola’s

ATV2500BL-25JI

Abstract: SMD fuse BA
Contextual Info: ATV2500B/ BV Features • • • • • • • • • High Performance, High Density Programmable Logic Device Typical 9 ns Pin-to-Pin Delay Fully Connected Logic Array With 416 Product Terms Flexible Output Macrocell 48 Flip-Flops - Two per Macrocell

2N2222

Abstract: 6C556 BCw610
Contextual Info: SMDTransistors SOT-23 Case 350mW Proelectron Series— Confd TYPE NO. BC8586 DESCRIPTION PNP LOW NOISE v n o VOLTS BV ceo (VOLTS) BVebo (VOLTS) MW MM MM m MAX 30 30 50 15 fCBO (^ ci (VOLTS) ftpE « MM MAX 30 220 475 V« (VOLTS) Vc í (SA T)« (mA> (VOUS)

TNY287

Abstract: TNY288 TNY285 tny 175 pn TNY287-288 Tny 178 PN tny 290 TNY290P TNY289-290 TNY287D
Contextual Info: TNY284-290 TinySwitch-4 Family Energy-Efficient, Off-Line Switcher With Line Compensated Overload Power Product Highlights Lowest System Cost with Enhanced Flexibility • 725 V rated MOSFET • Increases BV de-rating margin • Line compensated overload power – no additional components

f20 fuse

Abstract: ATV750BL-20DM
Contextual Info: ATV750B/BV Features • Advanced, High Speed Programmable Logic Device Improved Performance • 10 ns Tpd , 100 MHz operation Enhanced Logic Flexibility Backward Compatible with ATV750/L Software and Hardware • New Flip-Flop Features D- or T-Type Product Term or Direct Input Pin Clocking

MOSFET Selection Guide

Abstract: TO257AA t0-205af TO254AA FSj264
Contextual Info: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480

I-348

Abstract: i348 TIR31 i346 IRFM360 IRFM360D IRFM360U I*348 9712A
Contextual Info: Data Sheet No. PD-9.712A INTERNATIONAL RECTIFIER i R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR ài IRFM360 N-CHANNEL 400 Volt, 0.20 Ohm HEXFET Product Summary T h e HEXFE T® technology is the key to International Part N um ber BV q s S

MMBD201

Abstract: BD201 bd2010 BD301 MMBD2010 318D-03 MMBD101 MMBD2010T1 DIODE WJ SOt23 MMBD3010T1
Contextual Info: MOTOROLA SEMICONDUCTOR — TECHNICAL Order this document bv MMBDIOIOLT1/D DATA MMBDIOIOLTI MMBD2010T~ Switching Diode Pad of the GreenMneTM Portfolio of devices with energy+onsewing traits. This switching diode has the following features: Very Low Leakage s 500 PA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

DAC8408BT

Abstract: D-10 E1513 cpvf
Contextual Info: R E V IS IO N S rr LTR APPROVED DATE VR-MO-DA DESCRIPTION ri REV SHEET REV SH EET REV STATUS OF SH EETS REV SHEET 1 3 4 PREPARED BY PMIC N/A STANDARDIZED MILITARY DRAWING 2 . O J fe tJ i— CHJ ^ Bv 5 6 7 8 AMSC N/A 11 12 13 „ DEFENSE ELECTRONICS SUPPLY CENTER

B60C 800 Si

Abstract: 0/B60C 800 Si
Contextual Info: 1 I n t e r n a t io n a l R e c t i f i e r G o v e rn m e n t a n d S p a c e P ro d u c ts Paît Number 2 BV[)SS (Volts) RDS(on) (Ohms) Ip • Tc°25° (Amps) Id 9 TC«100" (Amps) Total Dos* Rating Rads (Si) Pd O Tc=25* (Watts) 15 7 15.3 12.7 6.0 24.3

Multimeter tektronix dmm 155

Contextual Info: Pomoi Bv Your Side Or At Your fingertips Filled With Quality for The World’s Leading Test Instrumentation M o d e l 4 5 5 0 A S e m iM o d u la r O s c illo s c o p e P ro n e d e s ig n a llo w s c o m p o n e n t re p la c e m e n t :0 100. 2 0 0 a n d

CS 20A RoHS

Contextual Info: 2. S c h e m a t ic : 1. M e c h a n ic a l D im e n s io n s : S e conda ry 0 .0 1 8 ± 0 .0 0 2 C 0 .2 5 0 Max E 0.100 XFMRS r> X F 0 1 9 6 2 -2 0 A • YYWW bV in 03 x CM 1 2 o □ 3 o u CM 6 O CQ K o o 4 P rim a ry 3. Electrical Specifications: Y Y jZ

Contextual Info: Low VF SMD Schottky Barrier Diode CDBQC0240L-HF I o = 200 mA V R = 40 Volts RoHS Device Halogen Free 0402C/SOD-923F Features 0.041 1.05 0.037(0.95) - Low forward voltage. - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction.