BVE 100 Search Results

ISO 2768-1

Abstract: DIN ISO 2768-1 BVE-A-R001 BVE-M-R0002 DIN 2768-1 isabellenhutte BVE-M-R0002-5 27681 manganin 10m BVE-A-R0005
Contextual Info: Ausgabe / Issue : 16/10/2002 ISA-PLAN - Präzisionswiderstände precision resistors Typ / type BVE Technische Daten / technical data Widerstandswerte resistance values 0.2, 0.3, 0.5, 1 mOhm Toleranz tolerance Temperaturkoeffizient temperature coefficient ( tcr )

Precision Resistors

Abstract: BVE-A-R001
Contextual Info: BVE Bauform / size : 5930 ISA-WELD - SMD Präzisionswiderstände / SMD precision resistors Technische Daten / technical data Widerstandswerte Resistance values 0.2, 0.3, 0.5, 0.6, 1, 2 mOhm Toleranz Tolerance 1 %, 5 % Temperaturkoeffizient* Temperature coefficient *

R0002

Abstract: BVE-A-R001 MANGANIN
Contextual Info: BVE Bauform / size : 5930 ISA-WELD - SMD Präzisionswiderstände / SMD precision resistors Technische Daten / technical data Widerstandswerte mOhm Resistance values (mOhm) 0.2, 0.3, 0.5, 0.6, 1 mOhm Toleranz Tolerance 1 %, 2 %, 5 % Temperaturkoeffizient*

Contextual Info: BVE Bauform / size : 5930 ISA-WELD - SMD Präzisionswiderstände / SMD precision resistors Technische Daten / technical data Widerstandswerte Resistance values 0.2, 0.3, 0.5, 0.6, 1, 2 mOhm Toleranz Tolerance 1 %, 5 % Temperaturkoeffizient* Temperature coefficient *

BVE-A-R001

Abstract: DIN ISO 2768-1 ISO 2768-1 BVE 100 DIN 2768-1 ISO 2768 MANGANIN R0002 r001 BVE-A-R0005
Contextual Info: Ausgabe / Issue : 16/10/2002 Precision Resistors Typ / type BVE Technische Daten / technical data Widerstandswerte resistance values 0.2, 0.3, 0.5, 1 mOhm Toleranz tolerance Temperaturkoeffizient temperature coefficient ( tcr ) < 50 ppm/K ( 20 °C – 60 °C )

BVE-A-R001

Contextual Info: BVE Bauform / size : 5930 ISA-WELD - SMD Präzisionswiderstände / SMD precision resistors TECHNISCHE DATEN / TECHNICAL DATA Widerstandswerte mOhm Resistance values (mOhm) 0.2, 0.3, 0.5, 1 mOhm Toleranz Tolerance 1 %, 2 %, 5 % Temperaturkoeffizient Temperature coefficient (tcr)

Contextual Info: BVE Bauform / size : 5930 ISA-WELD - SMD Präzisionswiderstände / SMD precision resistors TECHNISCHE DATEN / TECHNICAL DATA Widerstandswerte Resistance values 0.2, 0.3, 0.5, 0.6, 1, 2 mOhm Toleranz Tolerance 1 %, 5 % Temperaturkoeffizient* Temperature coefficient *

smd 27E

Abstract: MCP3041 smd TRANSISTOR 27e c2075 transistor C2078 MCP3040 MOC3041 optocoupler S7E SMD TRANSISTOR transistor C2075 optocoupler moc3031
Contextual Info: DUALITY- TE CHNOLOG IES CÔRP VDE APPROVED ZERO-CROSSING TRIACS QUALITY TECHNOLOGIES 7non ranee,ur 30 mA MCP3030* MCP3040/0Z* ZEHO-GKUaaiNU 15mAMCP3031 MCP3041/1Z MCP3032 MCP3042/2Z ’ bVE ' DESCRIPTION PACKAGE DIMENSIONS These devices are optically isolated zero-crossing triac

SL 100 NPN Transistor

Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Contextual Info: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE

BVE-A-R001

Abstract: MANGANIN BVE-M-R0005 Isotek 5930 code isabellenhutte bve BVE 100 BVE-M-R0005-1 BVE-M-R0005-1.0 iSABELLEN
Contextual Info: BVE size : 5930 ISA-WELD - SMD precision resistors technical data Resistance values mOhm 0.2, 0.3, 0.5, 0.6, 1 mOhm Tolerance 1 %, 2 %, 5 % Temperature coefficient (tcr)* < 50 ppm/K (20 °C to 60 °C)* Applicable temperature range -55 °C to +170 °C Load capacity

PL-513

Abstract: pl513 7915 PRO2287 PRO2288 PRO2577 PRO2578 PRO2586 PRO2587 PRO2588
Contextual Info: EPIC H-B 24 Housings Housing style H-B. The industry standard. EPIC Industrial Connectors Rectangular Connectors H-B 24 TSH-RO EPIC® H-B 24 Housings PL513 Farbe_Kap09 Suitable inserts: EPIC® H-B 24 TG TSH-RO 2X 454 455 116371 EPIC H-BVE 10 see page 454

2493 transistor

Abstract: BFG35 BFG55 UBB337
Contextual Info: •I Philips Sem iconductors — ^ 53^131 □ 0 iMfi3 b T T 3 H A P X N A PIER PHI LIP S /D IS C R ET E bVE p Product soeciflcation PNP 4 GHz wideband transistor FEATURES ^ BFG55 PINNING • High output voltage capability PIN • High gain bandwidth product

PNP 2N3904

Abstract: 2n2222 pin 2N2222 2N2222 pnp 2N3906
Contextual Info: Quad Transistors* '^00 TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BVq b o bvceo BVe b o 00 (Vi (V) (nA) MIN MIN MIN MAX *CBO v CBO hpE @ iC (mA) (V) MIN VCE(SAT) ® 'C (V) (mA) MAX ^ob *T NF *OFF COMMENTS

EE-32

Abstract: H-EE 32 EPIC
Contextual Info: Product Information Page 1 of 1 EPIC H-B 16 TS Valid: 27.03.2008 Product Description Suitable inserts EPIC® MCR 16 EPIC® H-BS 6 EPIC® H-D 40 EPIC® H-BVE 6 EPIC® H-BE 16 Screw termination EPIC® H-DD 72 EPIC® H-BE 16 Crimp termination EPIC® H-EE 32

Contextual Info: •PHOTO TRANSISTOR ▼CHARACTERISTICS BY MATERIAL T a = 2 5 ’C f W S i j i S H K S f iE Breakdown BVe^akdown OO.IfcCtCS m m m m I S i l i l i i; 5 u r r i r r f j VCEO TO -18 PS 502 VCEO 60 100 30 5 W m ÊSm ÊËSÊÈM . TYP». , 1c 50 150 ë S  ^ ü Ifâ it I

3N121

Abstract: 3n123
Contextual Info: , One, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. OtVICI •CLARITY 3N121 3N123 3N129 3N130 3N131 BVlfO yum NPN PNP PNP PNP PNP 20 25 10 20 30 TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 BVctO r»« (Jol) !(EO Vo« VMIN nA MAX uMAX .VMAX

1n4007

Abstract: 1N4007 SMD PC817 smd 1n4007 TNY268P 10D511K pc 817 smd MOV1 PC-817 104pf
Contextual Info: C4 222 Y1 Vo load +ve D6 C3 T1 RF1 D4 1N4007 6.8E R2 MOV1 C7 TH1 D2 1N4007 D3 1N4007 D7 B-ve R5 TNY268P R2 1.2k smd load -ve R8 D5 L3 U2 pc 817 D 20E NTC R7 22E Q1 EN/UV R4 U1 S N + C1 R1a + C2 + 1000uF/25V B+ve D1 1N4007 10D511K F1 L 10E,3W BP C5 104pf R6

pulse

Abstract: 10K100 s100
Contextual Info: PCN RESISTORS Diagram of pulse energy and power derating BVS power [W] 1M 100k 100k 1k 10k 100 10M 1k 10 100 1 10 0.1 1 1 s 10 s 100 s 1 ms 10 ms pulse width PCN Corporation 100 ms 1s Yokohama Business Office 10 s 100 s power [W] pulse energy [J] 10k PCN RESISTORS

2N2945A

Contextual Info: 2N2945A SILICON PNP TRANSISTOR DESCRIPTION: PACKAGE STYLE TO- 46 The 2N2945A is Designed for Low Level, High Speed Chopper Applications. MAXIMUM RATINGS 1 = EMITTER Ie 100 mA Vec -20 V Pd i s s 2.0 W @ Te $ 25 0C 2 = BASE Tj -65 °C to +200 0C Ts t g -65 0C to +200 0C

2N3033

Contextual Info: 2N3033 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3033 is Designed for Avalanche-Mode Very Fast Switching Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS 200 mA < o m Ie 100 V p d is s 1.0 W @ Te = 25 °C Tj -65 0C to '200 0C Ts t g -65 0C to '200 0C

3N123

Contextual Info: ^zmi-donauckoi , inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 LOW COST 3N123 SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR GEOMETRY 450 » t-.in : 001 ELECTRICAL DATA ABSOLUTE MAXIMUM RATING

bf494

Abstract: bf 494 BF495 Transistors BF 494 BF 494 C bf494 emitter common BP495
Contextual Info: BF 494 BF 495 NPN SILICON RF SMALL SIGNAL TRANSISTORS $ | j V - iììp f j S y CASE T0-92E THE BF494, BF495 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS UP TO 100MHz. CBE BF494 ABSOLUTE MAXIMUM RATINGS BF495 Collector-Base Voltage

PG2349

Abstract: LEA-5 2N2811 2N2812 2N2813 2N2814 PG1335 PG1336 PG2335 PG2347
Contextual Info: P I ELECTRONICS INC A *,4 : 10 AMP jj 100 VOLT j 40 WATT Î 60 MHz ] 1 TO-61 #»a |l tP,y'v ip V:it K-ï ¡g$ •¿-¡if-' *&? ;V . ?$ TO-61 • Low saturation voltage at maximum collector current • High voltage, BVceoi.u. to 100 volts B V c E O sus)

15053-46B

Abstract: CM 8116 8114
Contextual Info: 15053-46B - CL— 1 Rd Cohm3 220 FCR8.0M5 Vdd- 5 CV3 Flg.a-d Ta- 20 Cdeg3 Typical a. V1H/V1L CV3 c . Fosc^ C%3 — »«— lasfes.» T -3 -2 -3 400 300 JU* -I- — I_ A. d. Trise CuS3 200 100 60 e. Duty 55 50 45 40 4 S3 j 1 f. Vstart l%3 52.4 52.1 .-j«