BVN MOSFET Search Results

SSR -40 DD

Contextual Info: SSR/U1N50A A d va n ce d Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax @ VDS= 500V

700v 4A mosfet

Abstract: sss6n70a
Contextual Info: SSS6N70A A d v a n c e d Power MOSFET FEATURES bvdss Low RDS on : 1.552 Ct (Typ.) 1.8 Q > • ^DS(on) = II Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 m A (Max.) @ Vos = 700V

Contextual Info: SSH4N90AS Advanced Power MOSFET FEATURES BVdss = 900 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ^DS on = ■ ■ Lower Input Capacitance Improved Gate Charge lD = 4.5 A ■ ■ Extended Safe Operating Area Lower Leakage Current : 25|iA (Max.) @ VDS = 900V

Contextual Info: IRFW/I550A Advanced Power MOSFET FEATURES b v d ss • ■ ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 1 7 5 t Operating Temperature Lower Leakage Current : 10 uA M ax. @ V ^ 100V

h51 diode

Abstract: RG-136
Contextual Info: SSW/I4N90A Advanced Power MOSFET FEATURES - 900 V ^D SS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |uA Max. @ VDS = 900V

L0250

Abstract: L014A
Contextual Info: IRFW/I644A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V dss = 2 5 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VOS= 250V

Contextual Info: SSS4N80AS Advanced Power MOSFET FEATURES BV0SS = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ ■ ■ ■ RoS on = 3.0 £2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25|iA (M ax.) @ VDS = 800V

Contextual Info: SSF17N60A Advanced Power MOSFET FEATURES = b v d ss 600 V • Avalanche Rugged Technology ^D S on = ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 pA(Max.) @ V 03 = 600V

Contextual Info: SSP6N90A A d va n ce d Power MOSFET FEATURES - b v dss 900 V • Avalanche Rugged Technology ^DS on = 2 .3 Q ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 900V ■ Low RDS(ON) : 1.829 i2(Typ.)

Contextual Info: IRFW/IZ14A Advanced Power MOSFET FEATURES BVdss = 60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 1 7 5 t Operating Temperature ■ Lower Leakage Current : 10 MA{Max.

Contextual Info: IRFW/I820A Advanced Power MOSFET FEATURES B V dss = 5 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 n A Max. @ VDS= 500V

IRF 640 mosfet

Abstract: SSS5N80A MOSFET 150 N IRF
Contextual Info: SSS5N80A A d v a n c e d Power MOSFET FEATURES BV • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology Lower Leakage Current : 25 ^A Max. @ VDS = 800V ■ Low RDS(0N) : 1.824 Q (Typ.) 2.2 £2 < ■ II Improved Gate Charge Extended Safe Operating Area

Contextual Info: SSP3N80A A d v a n c e d Power MOSFET FEATURES B ^ dss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower-Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 800V

N-Channel mosfet 400v 25A

Abstract: IRF820A N-Channel mosfet driver 400v to220
Contextual Info: IRF820A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 ji A Max. @ Lower R ^ onj : 2.000 £2 (Typ.)

sss4n60a

Abstract: mosfet 407 SSS4N60AS
Contextual Info: SSS4N60AS Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV0SS = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA Max. @ Lower RDS(ON) : 2.037 Q. (Typ.)

SSH6N80AS

Abstract: SSH6N80A MOSFET 800V 3A
Contextual Info: SSH6N80AS Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ I BVdss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 MA Max. @ VDS= 800V Low ^ ds{on) • 1-472 £2 (Typ.)

Contextual Info: SSS1N60A Advanced Power MOSFET FEATURES BVoss “ 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 yA M ax. @ VOS= 600V

DD313

Abstract: IRFS614A
Contextual Info: IRFS614A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ sv DSS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 M A{M ax. @ VDS = 250V

SFS9634

Abstract: p-channel 250V power mosfet DIODE D3S 90 Power MOSFET P-Channel 250V 50A d3s diode
Contextual Info: SFS9634 Advanced Power MOSFET FEATURES BVdss = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA Max. @ VDS= -250V

L20A

Contextual Info: IRFP240A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V dss = 2 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS= 200V

SSH7N90A

Contextual Info: SSH7N90A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA Max. @ VDS= 900V Low RDS(ON) : 1.247 Q. (Typ.)

rc261

Contextual Info: SSS4N80A Advanced Power MOSFET FEATURES BVdss ” 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 uA M ax. @ VDS= 800V

SSH10N60A

Contextual Info: SSH10N60A Advanced Power MOSFET FEATURES B V d ss = 6 0 0 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 t-i A M ax. @ VDS = 600V

Contextual Info: SSF9N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V Dss = 8 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jaA Max. @ V ^ = 800V