BY 126 DIODE DYNAMIC RESISTANCE Search Results

Contextual Info: APT6017WVR 600V 31.5A 0.17Ω Ω POWER MOS V TO-267 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: • R r M APT6017WVR A d va n ced po w er Te c h n o l o g y 0.1 7a 600v 31 .sa POWER MOS V' Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

LG direct drive motor

Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Contextual Info: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W

Contextual Info: APT6017WVR 600V 31.5A 0.170Ω POWER MOS V TO-267 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

IRF MOSFET 100A 200v

Abstract: IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806
Contextual Info: IRF5801PbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current

Contextual Info: Single N-channel MOSFET ELM3C0660A •General description ■Features ELM3C0660A uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • Vds=600V • Id=6A • Rds(on) < 1.25Ω (Vgs=10V) ■Maximum absolute ratings

Contextual Info: Single N-channel MOSFET ELM3C0660A •General description ■Features ELM3C0660A uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • Vds=600V • Id=6A • Rds(on) < 1.25Ω (Vgs=10V) ■Maximum absolute ratings

ku024n06p

Abstract: IS80A
Contextual Info: SEMICONDUCTOR KU024N06P TECHNICAL DATA N-ch Trench MOS FET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,

Contextual Info: NTE2969 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3P Package Description: The NTE2969 is an N−channel enhancement mode power field effect transistor in a TO3P type package especially tailored to minimize on−state resistance, provide superior switching performance, and

Contextual Info: Single N-channel MOSFET ELM34416AA-N •General description ■Features ELM34416AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=11A Rds(on) < 12.0mΩ (Vgs=10V) Rds(on) < 17.5mΩ (Vgs=4.5V)

Contextual Info: Single N-channel MOSFET ELM34416AA-N •General description ■Features ELM34416AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=11A Rds(on) < 12.0mΩ (Vgs=10V) Rds(on) < 17.5mΩ (Vgs=4.5V)

Contextual Info: Single N-channel MOSFET ELM33412CA-S •General description ■Features ELM33412CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=20V Id=6A Rds(on) < 24mΩ (Vgs=4.5V) Rds(on) < 32mΩ (Vgs=2.5V)

c2802

Abstract: AS1210
Contextual Info: APT5024BVR A dvan ced P o w er Te c h n o l o g y 500v 22A 0.240a POWER MOS V Power MOS V isa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

kf9n25

Abstract: KF9N25D
Contextual Info: SEMICONDUCTOR KF9N25D TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters

A1 SOT-23 MOSFET P-CHANNEL

Abstract: P-Channel MOSFET code 1A TSM2307CX TSM2307 p-channel mosfet c 103 mosfet P-Channel MOSFET code L 1A P-Channel SOT-23 Power MOSFET sot-23 P-Channel MOSFET
Contextual Info: TSM2307 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -30 Features ID (A) 80 @ VGS = -10V -3 140 @ VGS = -4.5V -2 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

Contextual Info: BSC009NE2LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for e-fuse and ORing application • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested • Superior thermal resistance VDS 25 V RDS(on),max 0.9 mW ID 100 A QOSS

mosfet marking Bc

Contextual Info: TSM2303 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -30 ID (A) 180 @ VGS =-10V -1.3 300 @ VGS =-4.5V -1.1 Block Diagram Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

IRF7303

Abstract: RD-622 100U AN-994 RD622 i100u IRF7303 application
Contextual Info: PD - 9.1239B International UggìRectifier IRF7303 preliminary HEXFET Power M O S F E T • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching

Contextual Info: TSM2307 30V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain -30 Features ID (A) 80 @ VGS = -10V -3 140 @ VGS = -4.5V -2 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

melcher SMR 121.5ER-7

Abstract: Melcher family SMR SMR 121.5er-7 melcher, uster, switzerland 126ER-7 melcher smr MELCHER SWITCHING REGULATOR 123ER-7 123ER-8 126ER-8
Contextual Info: 5975062 ME LCHE R 89D 00025 INC M C L C H E R f Ackerstrasse 56 Postfach CH-8610 Uster Telefon 01 9413737 Telex 57154 meus ch Telefax 9409858 eIektronische G eräte AG S w itzerlan d /— / T - ttlt- S Switching Mode Regulator Input voltage Vi = V0+ 5 V . .35 VDC

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT2305 is P-channel enhancement mode Power MOSFET, designed in serried ranks. with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount

utc 324

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.

UT2305G-AE3-R

Abstract: UT2305 UT2305G MARKING 23E SOT-23 P-Channel 1.8V MOSFET
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT2305 is P-channel enhancement mode Power MOSFET, designed in serried ranks. with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount

mosfet 740

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2305A Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT2305A is P-channel enhancement mode Power MOSFET, designed in serried ranks. with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount