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transistor D 4515

Abstract: ceramic axial capacitors D 4515 VISHAY CONNECTORS vishay AXIAL ELECTROLYTIC capacitors
Contextual Info: Construction and Lead Configuration Vishay Multilayer Ceramic Dipped Axial Capacitors 50, 100, 200 and 500 Vdc e3 INTERNAL CONSTRUCTION Multilayer ceramic capacitors consist of electrodes, the interleaved ceramic dielectric and the external terminal connectors. The capacitance is given by the description:

transistor MRF321

Abstract: JMC 1200
Contextual Info: MOTOROLA Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts

TRF marking sot23

Contextual Info: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Diode BAS16LT1 3 o \4 CATHODE o 1 Motorola Preferred Device ANODE MAXIMUM RATINGS Rating Symbol Continuous Reverse Voltage Unit Vr 75 Vdc if 200 mAdc ¡FMfsurge 500 mAdc Symbol

MMBD6050LT1

Contextual Info: MOTOROLA Order this document by MMBD6050LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Diode MMBD6050LT1 3 3 CATHODE 1 ANODE 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit

J023

Abstract: jmc 5201
Contextual Info: MOTOROLA Order this document by MRF323/D SEMICONDUCTOR TECHNICAL DATA MRF323 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts

BAV74LT1

Contextual Info: MOTOROLA Order this document by BAV74LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV74LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500

MRF321

Abstract: 3 w RF POWER TRANSISTOR NPN erie redcap capacitors 1N4001 VK200 transistor MRF321
Contextual Info: MOTOROLA Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc

marking MN sot-23

Abstract: SOT-23 MARKING mn
Contextual Info: MOTOROLA Order this document by MM B06050LT1 ID SEMICONDUCTOR TECHNICAL DATA Switching Diode CATHODE % ANODE 1 MAXIMUM RATINGS Symbol Value Unit Reverse Voltage Vr 70 Vdc Forward Current if 200 mAdc *FM surge 500 mAdc Symbol Max Unit Pd 225 mW 1.8 mW/°C

jmc 5201

Contextual Info: MOTOROLA Order this document by MRF323/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF323 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V

MRF323

Abstract: erie redcap capacitors VK200
Contextual Info: MOTOROLA Order this document by MRF323/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF323 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200– 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V

Contextual Info: MOTOROLA Order this document by MMBD914LT1/D SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode 3 O 14 CATHODE o 1 ANODE MAXIMUM RATINGS Rating Symbol Value Unit Vr 100 Vdc if 200 mAdc iFM surge 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW /°C R0JA 556

fw sot-23

Contextual Info: MOTOROLA Order this document by MMBD6050LT1/D SEMICONDUCTOR TECHNICAL DATA S w itc h in g D io d e MMBD6050LT1 3 o CATHODE H— o1 ANODE MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Vr 70 Vdc Forward Current if 200 mAdc lFM surge 500 mAdc Symbol

Contextual Info: PWR-DRV1 Universal Power Driver 400 V - 300 mA/500 mA POWER INTEGRATIONS, INC. Product Highlights Can operate from rectified AC or DC power source • • 200, 300, and 400 V versions Drives up to 50 W loads from rectified 120 VAC input Can be controlled by mechanical switches, digital

Contextual Info: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA S w itching Diode BAS16LT1 3 0 CATHODE ^ 0 1 ANODE M o to r o la P re fe rre d D e v ic e MAXIMUM RATINGS Rating Symbol Value Unit Vr 75 Vdc if 200 m Adc 'FM fsurge 500 mAdc Symbol Max

NPD8301

Abstract: J406 dual NPD8303 J406 2N3934 2N5561 2N3954-6 2N5045 2N5454 2N3935
Contextual Info: 1 This JFET Transistors NATL Material National áuá Semiconductor N-Channel JFETs Typ« No. Case Style VGS1-2 D rift G„ Gfs C|ss C ru BV R G ou CMRfl Vg» Vp Igss loss Gis GosCI-2 Iq H G 2 Process Pkg. Goss Idss •g Vos O iV /T PA) jim hos Oimho) (dB)

IXTN550N055T2

Contextual Info: Advance Technical Information IXTN550N055T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 55V 550A Ω 1.30mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C

Contextual Info: Advance Technical Information IXFN520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 75V 455A Ω 1.65mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C

908B

Abstract: dbs9905
Contextual Info: DBS 908 DBS 908LM 2 GS/s VXI Waveform Digitizer Mezzanine Module For the Analogic DBS 9905 “C” Size VXI Carrier Module Introduction The high-performance DBS 908 Waveform Digitizer is a modular mezzanine board designed for use with the DBS 9905 “C” size VXI carrier module. It features a maximum sampling rate of 2 GigaSamples/second, 8-bit resolution and

CY27S03A

Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
Contextual Info: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability

Contextual Info: Preliminary Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET MMIX1F360N15T2 VDSS ID25 = = trr ≤ RDS on ≤ (Electrically Isolated Tab) 150V 235A Ω 4.4mΩ 150ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol

Contextual Info: Preliminary Technical Information MMIX1F360N15T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = trr ≤ RDS on ≤ (Electrically Isolated Tab) 150V 235A Ω 4.4mΩ 150ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol

Contextual Info: Advance Technical Information MMIX1F360N15T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = trr ≤ RDS on ≤ (Electrically Isolated Tab) 150V 235A Ω 4.4mΩ 150ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions

Contextual Info: Advance Technical Information MMIX1F420N10T GigaMOSTM TrenchTM HiperFETTM Power MOSFET VDSS ID25 = = Trr ≤ RDS on ≤ (Electrically Isolated Tab) 100V 334A Ω 2.6mΩ 140ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions

Contextual Info: Advance Technical Information GigaMOSTM TrenchTM HiperFETTM Power MOSFET MMIX1F420N10T VDSS ID25 = = Trr ≤ RDS on ≤ (Electrically Isolated Tab) 100V 334A Ω 2.6mΩ 140ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions