BY 51100 Search Results

Contextual Info: SIEMENS 2M X 36-Bit Dynamic RAM Module HYM 362140S/GS-60/-70 Advanced Information 2 097 152 words by 36-bit organization alternative 4 194 304 words by 18-bit CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Fast access and cycle time 60 ns access time

Q67100-Q954

Abstract: Q67100-Q955 Q67100-Q956 Q67100-Q957 362140GS-70
Contextual Info: 2M x 36-Bit Dynamic RAM Module HYM 362140S/GS-60/-70 Advanced Information • 2 097 152 words by 36-bit organization alternative 4 194 304 words by 18-bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time

Contextual Info: SIEMENS 2 M X 36-Bit Dynamic RAM Module HYM 362120S-60/-70/-80 Advanced Information • 2 097 152 words by 36-bit organization alternative 4 194 304 words by 18-bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time

KS0086

Contextual Info: PRELIMINARY 80CH COM/SEG DRIVER FOR DOT MATRIX LCD KS0086 INTRODUCTION 100QFP The KS0086 is a LCD driver LSI which is fabricated by low power CMOS high voltage process technology. In case of segment driver, it can be interfaced as 1-bit serial or 4-bit parallel by controller. In case of common

Contextual Info: SIEMENS 1M X 36-Bit Dynamic RAM Module 2M X 18-Bit Dynamic RAM Module HYM 361120/40S/GS-60/-70 Advanced Information • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) 12 decoupling capacitors mounted on substrate • Fast access and cycle time

Contextual Info: SIEMENS 2 M x 36-Bit Dynamic RAM Module HYM 362120S-60/-70/-80 Advanced Information • 2 097 152 words by 36-bit organization alternative 4 194 304 words by 18-bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time

Q67100-Q645

Abstract: 514400AJ 362120GS-60 362120 2m x 36 362120GS-80
Contextual Info: SIEMENS 2M x 36-Bit Dynamic RAM Module HYM 362120GS-60/-70/-80 Advanced Inform ation • 2 097 152 words by 36-bit organization alternative 4 194 304 words by 18-bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time

511000

Abstract: 361120GS-70
Contextual Info: 1M x 36-Bit Dynamic RAM Module 2M × 18-Bit Dynamic RAM Module HYM 361120/40S/GS-60/-70 Advanced Information • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) • 12 decoupling capacitors mounted on substrate • Fast access and cycle time

KS0086

Abstract: Display LCD 20x4 C160 C161 C240 SC80 acs lcd
Contextual Info: KS0086 PRELIMINARY 80CH COM/SEG DRIVER FOR DOT MATRIX LCD INTRODUCTION 100QFP The KS0086 is a LCD driver LSI which is fabricated by low power CMOS high voltage process technology. In case of segment driver, it can be interfaced as 1-bit serial or 4-bit parallel by controller. In case of common

Contextual Info: S IEM EN S 1M X 36-Bit Dynamic RAM Module 2M X 18-Bit Dynamic RAM Module HYM 361120/40S/GS-60/-70 Advanced Inform ation 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) 12 decoupling capacitors m ounted on substrate Fast access and cycle time

hyb514400aj

Abstract: 514400AJ
Contextual Info: SIEMENS 1M X 36-Bit Dynamic RAM Module 2M X 18-Bit Dynamic RAM Module HYM 361120GS-60/-70/-80 Advanced Inform ation • • • • • • • • • • • • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) Fast access and cycle time

Contextual Info: SIEMENS 1 M X 36-Bit Dynamic RAM Module 2 M X 18-Bit Dynamic RAM Module HYM 361110/20S-60/-70/-80 Advanced Information • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version)

Contextual Info: PRELIMINARY 80CH COM/SEG DRIVER FOR DOT MATRIX LCD KS0086 INTRODUCTION T h e KS0086 is a LCD driver LSI w hich is fabricated by low power CM OS high voltage process technology. In case of segm ent driver, it can be interfaced as 1 -bit serial or 4 -bit parallel by controller. In case of com m on

Contextual Info: SIEMENS 1 M x 36-Bit Dynamic RAM Module 2 M x 18-Bit Dynamic RAM Module HYM 361110/20S-60/-70/-80 Advanced Information • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version)

Cornell Dubilier type dcm

Abstract: C-0250 cde DCM capacitors DCMX Cornell Dubilier DCMX vibrating capacitor Cornell Dubilier DCM
Contextual Info: CORNELL DUBILIER OD E S eliT lor Gu i d e & îV-rformam'e Specifications * C o m p u ter ¡ra d e Use this Guide to select the best com puter grade capacitor for your applica­ tion. The six colum ns in the m iddle rank CDE capacitors by characteristic. T hose Types that are superior in a given category are indicated by a star

T-46-23-15

Abstract: ah rzj IMSM511002AI MSM511002A-1A oki msm
Contextual Info: 4bE ]> w • b72454Q 000^534 RTS « O K I J O K I O K I SEMICONDU CT OR GROUP semiconductor_ M SM 511002A _ 1,048,576-WORD x 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511002A is a new generation dynam ic RAM organized as 1,048,576 w ords by 1 bit. The

Contextual Info: 1,048,576 W ORDS x 8 BIT DYNAMIC RAM MODULE PRELIMINARY DESCRIPTION The THM 81000AS/ASG/AL is a 1,048,576 words by 8 bits dynam ic RAM m odule w hich assem bled 8 pcs of T C 511000A J on the printed circuit board. T he THM 81000AS/AL is optim ized for application to

DQ712

Abstract: 511000BJ-70
Contextual Info: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 50 ns access time 95 ns cycle time -50 version

511000

Abstract: 51100 P-SOJ-26/20-1 511000BJ-70 Q67100-Q1056 Q67100-Q518 256KDRAM
Contextual Info: 1 M x 1-Bit Dynamic RAM Low Power 1 M × 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information 1 048 576 words by 1-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time -50 version 60 ns access time

Contextual Info: 1 ,048,576 W O R D x PRELIMINARY 1 BIT D Y N A M IC R A M DESCRIPTION 511000 The TC BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

511000BJ7

Contextual Info: 1 M x 1-Bit Dynamic RAM Low Power 1 M × 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information 1 048 576 words by 1-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time -50 version 60 ns access time

HM511001-12

Abstract: HM511001
Contextual Info: H M 511001 S e r ie s 1048576-word x 1-bit CMOS Dynamic Random Access Memory The Hitachi HM511001 Series is a CMOS dynamic RAM organized 1,048,576-word x 1-bit. HM511001 has realized higher density, higher performance and various functions by employing 1.3jum CMOS process technology and some new CMOS circuit

HM511001-12

Contextual Info: H M 511001S S e rie s -Preliminary 1048576-word x 1-bit CM O S Dynamic Random Access Memory The Hitachi HM 511001S series is a C M O S dynamic R A M organized 1048576-word x 1-bit. H M 511001S has realized higher density, higher performance and various functions by employing

Contextual Info: SIEM ENS 1M x 1-Bit Dynamic RAM HYB 511000B-60/-70/-80 HYB 511000BL-60/70 Advance Information • • • • • • • • • • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time HYB 51 1000B/BL-60