BY 550-50 DIODE Search Results

by 550-50 diode

Contextual Info: BY 550-50.BY 550-1000 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module -2 Axial lead diode Standard silicon rectifier diodes BY 550-50.BY 550-1000 8  9  3  9  9

Contextual Info: BY 550-50.BY 550-1000 -2 Axial lead diode Standard silicon rectifier diodes BY 550-50.BY 550-1000 8  9  3  9  9 * 0*  3  9  9 *   9    9 2  => %%$% => %%$+ => %%$ => %%$" => %%$ => %%$? #88 # % + 

Contextual Info: BY 550-50.BY 550-1000 -2 Axial lead diode Standard silicon rectifier diodes BY 550-50.BY 550-1000 8  9  3  9  9 * 0*  3  9  9 *   9    9 2  => %%$% => %%$+ => %%$ => %%$" => %%$ => %%$? #88 # % + 

by 550-50 diode

Contextual Info: BY 550-50.BY 550-1000 -2 Axial lead diode Standard silicon rectifier diodes BY 550-50.BY 550-1000 8  9  3  9  9 * 0*  3  9  9 *   9    9 2  => %%$% => %%$+ => %%$ => %%$" => %%$ => %%$? #88 # % + 

Contextual Info: BY 550-50.-1000 Silizium Gleichrichter Silicon Rectifier 5A Nominal current Nennstrom 50. 1000 V Repetitive peak reverse voltage Periodische Spitzensperrspannung 0 5.6 x 7.5 [mm] Plastic case Kunststoffgehäuse Weight approx. Gewicht ca. 1.4 g Plastic material has UL classification 94V-0

Contextual Info: FAGO R^ BY550-50.BY550-1000 5 Amp. Silicon Rectifier Diodes D im en sio n s in mm. D O -20IA D Plastic 1 1 — Voltage 50 to 1.000 V. 1 Current 5.0 A. at 60°C. 62.S 1O.5 • Low cost Mounting instructions 1. Min. distance from body to soldering point,

NX8509

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8509 Series 1 550 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX8509 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode coaxial module with an internal optical isolator.

BY550

Abstract: BY550-1000 BY550-50
Contextual Info: BY550-50 . BY550-1000 5 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-201AD Plastic Voltage 50 to 1000 V. Current 5.0 A. at 60°C. 9.1 ± 0.3 62.5 ± 0.5 • Low cost Mounting instructions 1. Min. distance from body to soldering point, 4 mm.

Diode 1N4007 DO-7 Rectifier Diode

Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
Contextual Info: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2

hz nec

Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8503BG-CC NX8503CG-CC 10 gb laser diode
Contextual Info: DATA SHEET LASER DIODE NX8503BG-CC,NX8503CG-CC 1 550 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX8503BG-CC and NX8503CG-CC are 1 550 nm Multiple Quantum Well MQW structured Distributed FeedBack (DFB) laser diode coaxial modules with single mode fiber.

superlattice avalanche

Abstract: NR3470MU-CC NR4270MU-CC NR4500BP-CC NR4500CP-CC NR7500 STM-16 STM-64 10 gb PIN receiver 10 gb APD receiver
Contextual Info: DATA SHEET RECEIVER NR4270MU-CC SUPERLATTICE APD RECEIVER WITH SINGLE MODE FIBER INTERNAL PREAMPLIFIER FOR 10 Gb/s APPLICATIONS DESCRIPTION The NR4270MU-CC is a 10 Gb/s superlattice avalanche photo diode APD receiver in a 17-pin mini-butterfly package with an internal preamplifier.

BFY 99

Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8304CE-CC NX8503BG-CC NX8508 BFY10
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8508 Series 1 470 TO 1 610 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s, CWDM DESCRIPTION The NX8508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode coaxial module with an

tunable laser diode

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8508 Series 1 470 TO 1 610 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s, CWDM DESCRIPTION The NX8508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode coaxial module with an

NX8300BE-CC

Abstract: NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8304CE-CC NX8503BG-CC NX8563LA NX8563LAS
Contextual Info: DATA SHEET LASER DIODE NX8563LA Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb/s DIRECTLY MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LA Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Single Mode

10 gb laser diode

Abstract: k 2545 NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8340MD NX8340MD-CC NX8340ME stm 64 laser diode 19pin
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8340 Series 1 310 nm MQW-DFB LASER DIODE MODULE WITH DRIVER FOR 10 Gb/s APPLICATIONS DESCRIPTION The NX8340 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with an internal

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8508 Series 1 470 TO 1 610 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s, CWDM DESCRIPTION The NX8508 Series are 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode coaxial modules with an

NX8300BE-CC

Abstract: NX8300CE-CC NX8303BG-CC NX8503BG-CC STM-16
Contextual Info: DATA SHEET LASER DIODE NX8503BG-CC 1 550 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX8503BG-CC is a 1 550 nm Distributed Feed-Back DFB laser diode coaxial module with single mode fiber. Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation

Contextual Info: DA9250.002 11 June 2004 MAS9250 High Efficiency Synchronous Step-Down Switching Regulator • Efficiency up to 93% • Switching Frequency from 400 kHz to 2 MHz • No Schottky Diode Required • PWM, PFM and PSK Operations • Low Dropout Operation: 100% Duty Cycle

NX8300CE-CC

Abstract: NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8504BE-CC NX8504CE-CC NX8300BE-CC
Contextual Info: DATA SHEET LASER DIODE NX8504BE-CC,NX8504CE-CC 1 550 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 622 Gb/s DESCRIPTION The NX8504BE-CC and NX8504CE-CC are 1 550 nm Multiple Quantum Well MQW structured Distributed FeedBack (DFB) laser diode coaxial modules with an internal optical isolator.

l42 DIODE

Contextual Info: DATA SHEET LASER DIODE NX8503BG-CC,NX8503CG-CC 1 550 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 156 Mb/s, 622 Mb/s DESCRIPTION The NX8503BG-CC and NX8503CG-CC are 1 550 nm Multiple Quantum Well MQW structured Distributed FeedBack (DFB) laser diode coaxial modules with single mode fiber.

BAP63-01

Abstract: BAP64-03 bap50-05 1SV308 replacement BAP64 BAP64-06W Diode RN731V BAP50-04 HSMP-3893 BAP70-02 equivalent
Contextual Info: Philips Semiconductors PIN diodes designed for RF applications up to 3 GHz Philips Semiconductors’ PIN diodes are designed for RF applications up to 3 GHz. Supplied in highly compact packaging, they allow for significant board-size reduction and hence smaller, lighter mobile

BFY-22

Abstract: NX8566LE303-CC NX8566LE311-CC NX8566LE318-CC NX8566LE326-CC NX8566LE334-CC NX8566LE342-CC NX8566LE350-CC NX8566LE-CC KM1225
Contextual Info: DATA SHEET LASER DIODE NX8566LE-CC EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM LONG-REACH 240 km APPLICATIONS DESCRIPTION The NX8566LE-CC is an Electro-Absorption EA modulator integrated, 1 550 nm Multiple Quantum Well (MQW)

TAA550

Abstract: ac voltage stabilizer circuit diagram TAA550B TBA271B tba 150 A TAA 550 TAA550 3 taa550a stabiliser circuit diagram tba 271
Contextual Info: LINEAR INTEGRATED C I R C U I T TAA550 TBA 271 VOLTAGE STABILIZER • LOW TEMPERATURE COEFFICIENT • LOW ZENER RESISTANCE The TAA 550/TBA 271 Is a m onolithic integrated voltage stab ilize r in a TO -18 two pins metal case. It is especially designed as voltage sup plier for varicap diodes in television

lM5140

Abstract: 1H1401
Contextual Info: Series 1H1401 - 1*1412 1M6520 - 1M6525 1M5461A-1M5476A SURFACE MOUNT TUNING DIODES Many popular axial leaded glaee packaged tuning diode types are now available in the MSI 1M Case for surface mount assemblies. The tuning diode chips, mounted on high density alumina substrates, are epoxy coated to