BY253 Search Results

Contextual Info: BY251GP, BY252GP, BY253GP, BY254GP, BY255GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction

BY252P

Contextual Info: BY251P thru BY255P Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 A • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in

BY255

Abstract: BY251 BY1600 BY2000 BY252 BY253 BY254
Contextual Info: BY251 . BY255, BY1600 . BY2000 BY251 . BY255, BY1600 . BY2000 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2011-03-04 Nominal Current Nennstrom 7.5±0.1 Type 62.5 ±0.5 Ø 4.5+0.1 -0.3 3A Repetitive peak reverse voltage Periodische Spitzensperrspannung

Contextual Info: 3.0 Am p MINIATURE PLASTIC SILICON RECTIFIERS D ata Sheet BY251 miconductor Features • LOW COST ■ DIFFUSED JUNCTION ■ HIGH CURRENT CAPABILITY E le c t r ic a l C h a r a c t e r is t ic s @ 2 5 *C . ■ M EETS UL SPECIFICATION 94V-0 Units B Y 2 5 1 . . . 2 5 5 S e r ie s

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

BY251GP

Abstract: BY252GP BY253GP BY254GP BY255GP
Contextual Info: BY251GP thru BY255GP Glass Passivated Junction Plastic Rectifier t c u rodFeatures P New DO-201AD • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • High temperature metallurgically bonded construction • Cavity-free glass passivated junction

BY251

Abstract: BY252 BY253 BY254 BY255
Contextual Info: BY251 THRU BY255 MEDIUM CURRENT PLASTIC RECTIFIER VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes FEATURES l Exce High surge current capability l Plastic package has Underwriters Laboratory Flammability Classification 94V-O l Low leakage l Void-free molded in DO-201AD plastic package

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

1n4001 melf

Abstract: BY253 BY254 1N5819M
Contextual Info: Schottky Rectifiers, Rectifiers Silicon Schottky Barrier Rectifiers 1 A Average Rectified Current a t T L = 90 °C Type 1N5817 1N5818 1N5819 1N5817 to 1N5819 DO-41 Glass Package 1N5817M to 1N5819M (MELF Glass Package) 1N5817M 1N5818M 1N5819M Silicon Rectifiers 1A

Contextual Info: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, IR less than 0.1 A

BY251GP

Contextual Info: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 200 V to 1300 V IFSM 100 A IR 5.0 µA VF 1.1 V Tj max. 175 °C d* e t n Pate DO-201AD * Glass-plastic encapsulation

1n5399 equivalent

Abstract: 1N5408 equivalent 1N5401 equivalent 1N4004 or 1N5404 UF4007 equivalent BY255 equivalent 1n5402 equivalent KBPC2502FP HER305 equivalent 1N4936 equivalent
Contextual Info: PRODUCT NEWS Part number crosses to Semikron's obsolete components Rectron Semiconductor is pleased to offer alernative components against the recent Semikron announcement of obsoleting many different part numbers and/ or series in equivalent or as near as possible package case styles.

BY251GP

Abstract: BY255GP JESD22-B102D J-STD-002B
Contextual Info: BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

do-214ac M1

Abstract: 1N4007 M7 1N4007 DO-214AC 1N4004 M4 1N4001 M7 1N4004 DO-214AC 1N4007 sma diode gs1j 1N4001 SMA 1N4004 GS1G
Contextual Info: SILICON RECTIFIERS SENSITRON SEMICONDUCTOR OPERATING AND STORAGE TEMPERATURE –65°C TO +175°C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Average Rectified Current @Half-Wave Resistive Load 60Hz Io @ T A AAV °C Maximum Forward Peak Surge Current

Contextual Info: BY251P thru BY255P Vishay Semiconductors formerly General Semiconductor General Purpose Rectifiers Reverse Voltage 200 to 1300V Forward Current 3.0A DO-201AD Features 1.0 25.4 Min. • Plastic package has Underwriters Laboratories Flammability Classification 94V-0

BY254P

Contextual Info: BY251P thru BY255P Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 200 V to 1300 V IFSM 150 A IR 5.0 µA VF 1.1 V Tj max. 150 °C DO-201AD Features • Low forward voltage drop • Low leakage current, IR less than 0.1 µA

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced