BY550 Search Results

diode by550

Abstract: BY550-50 BY550-1000 BY550-100-T3 BY55050 BY550-50-T3 BY550-50-TB RS-296-E BY550x
Contextual Info: BY550-50 – BY550-1000 WTE POWER SEMICONDUCTORS Pb 5.0A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-201AD, Molded Plastic

By550

Abstract: BY550-100 BY550-1000 BY550-200 BY550-400 BY550-50 BY550-600 BY550-800
Contextual Info: BY550-50 . BY550-1000 BY550-50 . BY550-1000 Si-Rectifiers – Si-Gleichrichter Version 2005-09-20 Nominal current Nennstrom ±0.1 7.5 ±0.1 Type 62.5 ±0.5 Ø 5.4 Ø 1.2 ±0.05 Dimensions - Maße [mm] 5A Repetitive peak reverse voltage Periodische Spitzensperrspannung

Contextual Info: 5.0 Amps Miniature BY550-100~1000 Data Sheet PLASTIC SILICON RECTIFIERS Description Mechanical Dimensions DO-201AD Dimensions in millimeters MECHANICAL DATA FEATURES Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per Low cost Diffused junction

BY550-1000

Abstract: BY550-50
Contextual Info: BL GALAXY ELECTRICAL BY550-50 - BY550-1000 VOLTAGE RANGE: 50 - 1000 V CURRENT: 5.0 A PLASTIC SILICON RECTIFIER FEATURES DO - 27 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned witn Freon,Alcohol,lsopropanol

BY550

Abstract: BY550-1000 BY550-50
Contextual Info: BY550-50 ~ BY550-1000 SILICON RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 5.0 Amperes DO - 201AD FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 1.00 25.4 MIN. 0.21 (5.33)

diode BY550

Contextual Info: BY550-50 – BY550-1000 WTE POWER SEMICONDUCTORS Pb 5.0A STANDARD DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: DO-201AD, Molded Plastic

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com BY550-50 ~ BY550-1000 SILICON RECTIFIER DIODES

DO27A

Abstract: G923
Contextual Info: S7E D 345T32S 0GDD755 TSÔ • F 6 R S BY550-50.BY550-1000 FAGOR fagor electronics tip. Silicon Rectifier Di . Dimensions in mm. s DO-201AD DO-27A Plastic Voltage 50 to 1.000 V. CO — 1 Current 5.0 A. at 60°C. 1 L _ p.3 *0.3 39.5 nun • Low cost

BY550-1000

Abstract: BY550-50 DO-27A
Contextual Info: 7E D 3 4 5 T 32 S 0 G D D 75 5 TSÔ • F 6 R S BY550-50.BY550-1000 FAGOR FAG OR E L E C T R O N I C S tip. Silicon Rectifier Di Dim ensions in mm. s DO-201AD DO-27A Plastic Voltage 50 to 1.000 V. CO — 1 Current 5.0 A. at 60°C. I L_ P-3 *0-3

BY550

Abstract: BY550-1000 BY550-50
Contextual Info: BY550-50 . BY550-1000 5 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-201AD Plastic Voltage 50 to 1000 V. Current 5.0 A. at 60°C. 9.1 ± 0.3 62.5 ± 0.5 • Low cost Mounting instructions 1. Min. distance from body to soldering point, 4 mm.

Contextual Info: BY550-50-BY550-1000 Plastic Silicon Rectifiers VOLTAGE RANGE: 50 - 1000 V CURRENT: 5.0 A DO - 27 Features Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned witn Freon,Alcohol,lsopropanol and similar solvents

Contextual Info: BY550-50 – BY550-1000 5.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data      

Contextual Info: FAGO R^ BY550-50.BY550-1000 5 Amp. Silicon Rectifier Diodes D im en sio n s in mm. D O -20IA D Plastic 1 1 — Voltage 50 to 1.000 V. 1 Current 5.0 A. at 60°C. 62.S 1O.5 • Low cost Mounting instructions 1. Min. distance from body to soldering point,

BY550G-400

Contextual Info: BY550G-400 GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 400V CURRENT: 5.0A FEATURE DO - 201AD Molded case feature for auto insertion High current capability Low leakage current High surge capability High temperature soldering guaranteed 250°C /10sec/0.375" lead length at 5 lbs tension

Contextual Info: BY550-50 … BY550-1000 Silicon Rectifiers Silizium Gleichrichter Version 2004-10-01 Nominal current Nennstrom ±0.1 Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…1000 V Plastic case Kunststoffgehäuse 7.5 ±0.1 Type 62.5 ±0.5 Ø 5.4

BY550-1000

Abstract: BY550-50 550-200 550-100 34S1325
Contextual Info: S7E D 345T32S 0GDD755 TSÔ • F 6 R S FAGOR fagor B Y 550-50. BY550-1000 electronics tip. Silicon Rectifier Di . Dimensions in mm. s DO-201AD DO-27A Plastic Voltage 50 to 1.000 V. CO — 1 1 L_ Current 5.0 A. at 60°C. p.3 *0.3 39.5 nun

Contextual Info: BY550-50 . BY550-1000 BY550-50 . BY550-1000 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2012-10-01 Nominal current Nennstrom 7.5 ±0.1 Type 62.5 ±0.5 Ø 5.4 ±0.1 Ø 1.2 ±0.05 Dimensions - Maße [mm] 5A Repetitive peak reverse voltage

BY550-1000

Abstract: BY550 BY550-50
Contextual Info: BY550-50 ~ BY550-1000 SILICON RECTIFIER DIODES DO - 201AD PRV : 50 - 1000 Volts Io : 5.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 1.00 25.4

Contextual Info: BL GALAXY ELECTRICAL BY550-50 - BY550-1000 VOLTAGE RANGE: 50 - 1000 V CURRENT: 5.0 A PLASTIC SILICON RECTIFIER FEATURES DO - 27 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned witn Freon,Alcohol,lsopropanol

BY550

Abstract: BY550-1000 BY550-50
Contextual Info: BY550-50 ~ BY550-1000 SILICON RECTIFIER DIODES DO - 201AD PRV : 50 - 1000 Volts Io : 5.0 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 1.00 25.4 MIN. 0.21 (5.33)

BY550-800

Abstract: by550 BY550-100 BY550-1000 BY550-200 BY550-400 BY550-50 BY550-600
Contextual Info: BY550-50 . BY550-1000 BY550-50 . BY550-1000 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2005-09-20 Nominal current Nennstrom 7.5 ±0.1 Type 62.5 ±0.5 Ø 5.4 ±0.1 Ø 1.2 ±0.05 Dimensions - Maße [mm] 5A Repetitive peak reverse voltage

BY55C

Abstract: BY55 BY550 BY55G
Contextual Info: JGD BY550 - 50 THRU BY550 -1000 O 5.0 AMPS. SILICON RECTIFIERS VOLTAGE RANGE 50 to 1000 Volts CURRENT 5.0 Amperes DO-201AD FEATURES * * * * T Low forward voltage drop High current capability High reliability High surge current capability .210 5.3 .190(4.8)

BY550

Abstract: BY550-1000 BY550-50
Contextual Info: BY550-50 ~ BY550-1000 SILICON RECTIFIER DIODES DO - 201AD PRV : 50 - 1000 Volts Io : 5.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 1.00 25.4

BY550

Abstract: BY550-1000 BY550-50
Contextual Info: CURRENT 5.0 Amperes VOLTAGE 50 to 1000 Volts BY550-50 THRU BY550-1000 Features • Low cost · Diffused junction · High current capability · The plastic material carries U/L recognition 94V-0 DO-201AD 0.210 5.3 0.188(4.8) DIA. 1.0(25.4) MIN. 0.375(9.5) 0.285(7.2)