BYM 26 Search Results

CXK5V8257BM

Abstract: CXK5V8257BTM CXK5V8257BYM
Contextual Info: CXK5V8257BTM/BYM/BM -70LL/10LL 32768-word x 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits.

AWPn

Abstract: JG30 CXK58257B
Contextual Info: SONY CXK58257BTM/BYM/BP/BM -55LL/70LL/10LL 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BYM/BP/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits. A polysilicon TFT cell technology realized extermely

Contextual Info: SONY | CXK5T8257BTM/BYM/BM -10LLX/12LLX 32768-word x 8-bit High Speed CMOS Static RAM Preliminary Description The CXK5T8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits. Special feature are low power consumption and

CXK5T8257BM

Abstract: CXK5T8257BTM CXK5T8257BYM
Contextual Info: CXK5T8257BTM/BYM/BM -10LLX/12LLX 32768-word x 8-bit High Speed CMOS Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK5T8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words

Contextual Info: SONY CXK5V8257BTM/BYM/BM •70LLX/85LLX*/1 OLLX* 32768-word x 8-bit High Speed CMOS Static RAM * Only TSOP available * * Only SOP available D escription The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits.

Contextual Info: CXK5V8257BTM/BYM/BM -70LL/10LL SO NY 32,768-word x 8-bit High Speed CMOS Static RAM Description The CXK5V8257BTM/BYM/BM is a 262,144-bit high speed CMOS static RAM organized as 32,768-words-by8-bits. A polysilicon TFT cell technology realizes extremely low stand-by current and higher data retention stability.

cxk58257btm

Contextual Info: SONY CXK58257BTM/BYM -7 0 L L X /1 0 L L X 32768-word x 8-bit High Speed CMOS Static RAM Description CXK582S7BTM The CXK58257BTM/BYM is 262.144 bits high CXK58257BYM 28 pin TSOP Plastic 28 pin TSOP (Plastic) speed CMOS static RAM organized as 32,768 words by 8 bits.

Contextual Info: SONY CXK58257BTM/BYM - 7 0 L L X /1 0 L L X 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BYM is 262.144 bits high speed C M O S static RAM organized as 3 2,768 CXK58257BTM CXK58257BYM 28 pin TSOP Plastic 28 pin TSOP (Plastic)

CXK58257bp

Abstract: cxk58257bym CXK58257b
Contextual Info: SONY CXK58257BTM/BYM/BP/BM - 5 5 L L /7 0 L L /1 0 L L 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BYM/BP/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits. A poiysilicon TFT cell technology realized extermely

Contextual Info: BYM-7-50-BYM07-400 EGL34A-EGL34G Surface Mount Glass Passivated Ultrafast Rectifier Reverse Voltage 50 to 400V Forward Current 0.5A Features DO - 213AA • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Capable of meeting environmental standards of

E3224

Abstract: E3166 2E3224
Contextual Info: SIEMENS Alphanumerisches Bestellnummernverzeichnis Ordering Codes in Alphanumerical Order Ordering Code Type Page C67067-A2900-A70 BYM 300 A 120 DN 2 411 C67070-A2006-A70 BSM 200 GA 120 DN 2 S 381 C67070-A2017-A70 BSM 300 GA 120 DN 2 S 391 C67070-A2007-A70

BYM10-1000

Abstract: BYM10-50 DO-213AB GL41A GL41Y J-STD-002B RED Color band DIODES GLASS GL41D
Contextual Info: BYM10-50 thru BYM10-1000, GL41A thru GL41Y Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.0 A BYM-50-1000 GL41A-Y VRRM 50 V to 1000 V 50 V to 1600 V IFSM 30 A IR 10 µA VF 1.1 V, 1.2 V

BYM-50-1000

Abstract: GL41A-Y DO213-AB color band
Contextual Info: BYM10-50 thru BYM10-1000, GL41A thru GL41Y Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.0 A BYM-50-1000 GL41A-Y VRRM 50 V to 1000 V 50 V to 1600 V IFSM 30 A IR 10 µA VF 1.1 V, 1.2 V

BYM 260

Abstract: BYM 96 C BYM10-50 DO-213AB GL41M BYM10-1000 GL41Y BYM10-50 DO-213AB GL41A J-STD-002B
Contextual Info: BYM10-50 thru BYM10-1000, GL41A thru GL41Y Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement

BYM 260

Abstract: BYM10-1000 BYM10-50 DO-213AB GL41A GL41Y J-STD-002
Contextual Info: BYM10-50 thru BYM10-1000, GL41A thru GL41Y Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement

vishay RGL

Abstract: BYM 260 BYM11
Contextual Info: BYM11-50 thru BYM11-1000, RGL41A thru RGL41M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 150 ns, 250 ns, 500 ns VF 1.3 V Tj max.

BYM 96 C

Abstract: do-213ab solder PAD DIMENSIONS BYM11-1000 BYM11-50 DO-213AB J-STD-002B RGL41A RGL41M BYM11
Contextual Info: BYM11-50 thru BYM11-1000, RGL41A thru RGL41M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique

BYM11-600

Abstract: BYM11-1000 BYM11-50 DO-213AB J-STD-002 RGL41A RGL41M
Contextual Info: BYM11-50 thru BYM11-1000, RGL41A thru RGL41M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique

DIODE bym26c

Abstract: bym260 BYM26D BYM26 diode BYM26B BYM26C BYM26G BYM26 BYM26A BYM26E
Contextual Info: N AMER PHILIPS/DISCRETE T> blE bbS3T31 00E7G1S P h ilip s S e m ic o n d u c to rs P ro d u c t s p e c ific a tio n Very fas t so ft-reco very avalanche rectifier d iodes FEA TUR ES • N o n-sna p-off soft- recovery sw itching ch aracteristics • C apability of absorbing reverse

BYM11-1000

Abstract: BYM11-50 DO-213AB J-STD-002 RGL41A RGL41M
Contextual Info: BYM11-50 thru BYM11-1000, RGL41A thru RGL41M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique

BYM 260

Abstract: BYM-50-1000 MJ 10100 BYM10-1000 BYM10-50 DO-213AB GL41A GL41Y J-STD-002 do213ab
Contextual Info: BYM10-50 thru BYM10-1000, GL41A thru GL41Y Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement

BYM10-1000

Abstract: BYM10-50 DO-213AB GL41A GL41Y BYM 260
Contextual Info: BYM10-50 thru BYM10-1000, GL41A thru GL41Y Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement

color bands do-213ab

Abstract: bym red green
Contextual Info: BYM11-50 thru BYM11-1000, RGL41A thru RGL41M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 150 ns, 250 ns, 500 ns VF 1.3 V Tj max.

BYM 96 e

Abstract: DO213-AB color band BYM 260 BYM11-1000 BYM11-50 DO-213AB J-STD-002B RGL41A RGL41M semiconductor band color code
Contextual Info: BYM11-50 thru BYM11-1000, RGL41A thru RGL41M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique