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    BYV 16 Search Results

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    BYV 16 Price and Stock

    Vishay Semiconductors BYV16-TR

    DIODE AVALANCHE 1KV 1.5A SOD57
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    DigiKey BYV16-TR Cut Tape 24,580 1
    • 1 $0.84
    • 10 $0.565
    • 100 $0.84
    • 1000 $0.28211
    • 10000 $0.25973
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    BYV16-TR Reel 20,000 5,000
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    • 10000 $0.225
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    Vishay Semiconductors BYV16-TAP

    DIODE AVALANCHE 1KV 1.5A SOD57
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BYV16-TAP Cut Tape 23,876 1
    • 1 $0.84
    • 10 $0.565
    • 100 $0.84
    • 1000 $0.28211
    • 10000 $0.25973
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    BYV16-TAP Ammo Pack 15,000 5,000
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    Vishay Intertechnologies BYV16-TAP

    AVALANCHE DIODE SOD57 STD - Ammo Pack (Alt: BYV16-TAP)
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    Avnet Americas BYV16-TAP Ammo Pack 14 Weeks 25,000
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    Mouser Electronics BYV16-TAP 23,812
    • 1 $0.83
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    • 100 $0.381
    • 1000 $0.26
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    Newark BYV16-TAP Reel 25,000
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    TTI BYV16-TAP Ammo Pack 25,000
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    EBV Elektronik BYV16-TAP 14 Weeks 5,000
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    Wuhan P&S BYV16-TAP 25,000 1
    • 1 $2.84
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    • 100 $0.95
    • 1000 $0.86
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    Vishay Intertechnologies BYV16-TR

    AVALANCHE DIODE SOD57 STD - Tape and Reel (Alt: BYV16-TR)
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    Avnet Americas BYV16-TR Reel 14 Weeks 25,000
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    Mouser Electronics BYV16-TR 32,612
    • 1 $0.68
    • 10 $0.565
    • 100 $0.389
    • 1000 $0.26
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    Newark BYV16-TR Reel 25,000
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    EBV Elektronik BYV16-TR 14 Weeks 5,000
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    Analog Devices Inc MAX6316LUK29BY/V+T

    Supervisory Circuits 5-Pin P Supervisory Circuits with Watchdog and Manual Reset
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    Mouser Electronics MAX6316LUK29BY/V+T
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    BYV 16 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BYV16 Changzhou Galaxy Electrical Rectifier Diode, Fast Recovery Rectifier, Single, 1000V, DO-15, 2-Pin Original PDF
    BYV16 Unknown Silicon Diode Original PDF
    BYV16 Vishay Intertechnology Fast Silicon Mesa Rectifier Original PDF
    BYV16 Vishay Telefunken Fast Silicon Mesa Rectifiers Original PDF
    BYV16 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BYV16 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BYV16 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BYV16 Unknown Cross Reference Datasheet Scan PDF
    BYV16 Philips Components Philips Data Book Scan Scan PDF
    BYV16 Telefunken Electronic Diodes 1977 Scan PDF
    BYV160 Philips Semiconductors Ultra fast low-loss rectifier Original PDF
    BYV160 Philips Semiconductors Ultra fast low-loss rectifier Scan PDF
    BYV16-TAP Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE AVAL 1.5A 1000V SOD57 Original PDF
    BYV16-TR Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE AVAL 1.5A 1000V SOD57 Original PDF

    BYV 16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode BYV 95

    Abstract: byv 16 BYV 08
    Text: BYV12, BYV 13, BYV 14, BYV 15, BYV 16 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Lead Pb -free component • Compliant to RoHS directive 2002/95/EC and in


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    PDF BYV12, 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, BYV12 BYV13 BYV14 BYV15 BYV16 Diode BYV 95 byv 16 BYV 08

    BYV 200

    Abstract: No abstract text available
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    PDF O-220AB J-STD-020, O-263AB O-220AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 BYV 200

    BYV32

    Abstract: BYV32-100 BYVF32 JESD22-B102D J-STD-002B
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    PDF O-220AB J-STD-020C, O-263AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 BYV32-100 JESD22-B102D J-STD-002B

    BYV32

    Abstract: BYVF32 JESD22-B102D J-STD-002B
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    PDF O-220AB J-STD-020C O-263AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 O-263AB 08-Apr-05 JESD22-B102D J-STD-002B

    BYVB32-200-E3

    Abstract: BYV32 BYVF32 JESD22-B102D J-STD-002B Diode BYV 95
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    PDF O-220AB J-STD-020C, O-263AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 BYVB32-200-E3 JESD22-B102D J-STD-002B Diode BYV 95

    BYV32-200E

    Abstract: Diode BYV 95
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    PDF O-220AB ITO-220AB BYV32 BYVF32 O-263AB J-STD-020, ITO-220AB 2002/95/EC BYV32-200E Diode BYV 95

    BYV32

    Abstract: BYVF32 JESD22-B102 J-STD-002 BYV 35 C BYV 35
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    PDF O-220AB J-STD-020, O-263AB O-220AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 JESD22-B102 J-STD-002 BYV 35 C BYV 35

    Untitled

    Abstract: No abstract text available
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    PDF O-220AB ITO-220AB BYV32 BYVF32 O-263AB J-STD-020, ITO-220AB 2002/95/EC

    BYV32-150

    Abstract: byv 20 BYV32100
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    PDF O-220AB ITO-220AB BYV32 BYVF32 O-263AB J-STD-020C, ITO-220AB 2002/95/EC BYV32-150 byv 20 BYV32100

    BYV32-200E

    Abstract: BYV32 BYVF32 JESD22-B102 J-STD-002 byv325
    Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    PDF O-220AB J-STD-020, O-263AB O-220AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB BYV32 BYVF32 BYV32-200E JESD22-B102 J-STD-002 byv325

    esja

    Abstract: ESJC ESJA82-12 BYV 35 esjc 0309 ESJA 52-12
    Text: Epitaxial Rectifier Diodes A tA = 25°C vF V ~ ¡F = I favm tv, = 25°C • ■ ■ ■ BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design 2x10 2x10 8 150 150 80 < 1,15 < 1,15 < 1,3 Ifsm Ifavm A t=8,3ms tvj = 25°C mA Ir trr outline mA ns < 35


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    PDF ESJA82-12 esja ESJC ESJA82-12 BYV 35 esjc 0309 ESJA 52-12

    SCHOTTKY bys 92-50

    Abstract: RECTIFIER bys 92-50 BYV 35 BYS 98-50
    Text: Epitaxial rectifier diodes Type V r rm Ifa v m t A = 25 °C V A vF Ifs m 10 ms, t,r Ir = Outline max ¡F - 1FAV W tV| = 25 °C VR tv , - a . A V mA ns °c < 0 .3 5 <50 150 111 112 V rh M • BYV 29-500 500 g 100 < 1 .4 ■ BYV 32-150 150 2x10 150 < 1.15 < 0 .6


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    ESJA

    Abstract: ESJC
    Text: Epitaxial Rectifier Diodes rrm V Ifa vm V Ifs m BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design Ir trr ns V mA = I fAVM tVJ= 25°C Vr = VHRM 150 150 80 < 1,15 < 1,15 <1,3 <0,6 <0,6 <0,6 V rrm If s m IpAVM kV A t=8,3ms tvj = 25°C mA tA = 25°C


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    PDF DD21liD ESJA ESJC

    BYV25

    Abstract: No abstract text available
    Text: FZ 7 SCS-THOMSON »7# BSB eB aiisfE? BOies BYV 255(V -50 —» 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES . VERY SM ALL CONDUCTION LOSSES • NEGLIGIBLE SW ITCHING LOSSES . LOW FORWARD AND REVERSE RECOVERY TIMES ■ INSULATED : capacitance 55pF


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    Untitled

    Abstract: No abstract text available
    Text: £ ÿ j SG S-TH O M SO N D»ilLiœ s R(|D(êS BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre­


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    PDF 300ns

    byw32-200

    Abstract: BY228-1500 BYV 200 byt 77 byv 25-200 BYV13 BYV14 BYV16 BYW32 BYW33
    Text: TELEFUNKEN ELECTRONIC ñ lC J> • ñc!5D0tlb OOQSb^ B MAU6G 'T-O f^ O f Sinterglass Rectifiers Fast Rectifiers-Soft recovery—in Sinterglass package: ^ R _ 2 5 ns tt>*550 ns Type Electrical characteristics Vr W VRRM V A BY 203/12 S /16S /20S BY 228 BY 228/13 S


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    PDF BYW32 BYW33 BYW34 BYW35 BYW36 BYW72 BYW73 BYW74 BYW75 BYW76 byw32-200 BY228-1500 BYV 200 byt 77 byv 25-200 BYV13 BYV14 BYV16

    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35


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    SCHOTTKY DIODES CROSS REFERENCE

    Abstract: SD 102 M BAT19 BAT29 equivalent 1ss99 BA 5818 SD-101 equivalent BAT29 bat 301 l BAR10
    Text: SCHOTTKY DIODES CROSS REFERENCE INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT TM M 62/63 1N 5711 1N 5711 LL101 A 1N 5712 1N 5712 LL 103 A.P.C


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    PDF BAR11 LL101 BAT47/48 BAT19 BAT29 10/BAT19 10/BAT SCHOTTKY DIODES CROSS REFERENCE SD 102 M BAT29 equivalent 1ss99 BA 5818 SD-101 equivalent bat 301 l BAR10

    BYV 200

    Abstract: diodes byw 92 FZJ 101 99P-200 byw 150 BYW 200 diodes byw 08 200 BYV 35 diodes byw 51 200 BYV 35 C
    Text: / ^ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# raoœmimMogs ' r /v r r m Tj 100°C max mA *rr (1) max (ns) Package 1 35 TO 220 RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES (Continued) VRRM = 50,100,150, 200 V Type trr max 35.80 ns


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    PDF BYW77P- 77P-100 77P-150 77P-200 77PI-150 77PI-200 BYW99P- 99P-100 99P-1508-100, BYV 200 diodes byw 92 FZJ 101 99P-200 byw 150 BYW 200 diodes byw 08 200 BYV 35 diodes byw 51 200 BYV 35 C

    BYV 200

    Abstract: BYV 200v FZJ 101 BYX61-200 BYW 200 BYX61-400 99P-200 77P-200 BYX65-400 BYV 35 C
    Text: SGS-THOMSON ^/^7#7 raoœmimMogs GENERAL PURPOSE & INDUSTRIAL RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Continued VR R M = 50,100,150, 200 V Type t rr max 35.80 ns ' r /v r r m Tj 100°C max (mA) *rr (1) max (ns) Package 1 35 TO 220


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    PDF BYW77P- 77P-100 77P-150 77P-200 77PI-150 77PI-200 BYW99P- 99P-100 99P-150ng BYX61-100 BYV 200 BYV 200v FZJ 101 BYX61-200 BYW 200 BYX61-400 99P-200 BYX65-400 BYV 35 C

    Untitled

    Abstract: No abstract text available
    Text: IBSAGrlBB ULTR'A-FAST-RECOVERY-RECTIFIER DIODES V RRM Typé ,V > I I FAV FSM (A (A) V at I F F (V) (A) t rr (ns) T jmax <C >. 200 300 400 500 600 800 900 1000 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 170 170 170 170 170 100 100 100 <1.5 <1.5 <1.7 <1.7 <1.7


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    BYV 35 C

    Abstract: BYV 200 BYW 200 BYW 56 V diodes byw 86 bvy 121 byv 65 BYY 56 diodes byw 29150
    Text: 'T - 0 3 - O I . Epitaxial rectifier diodes Type :‘»IE d eupec Vrrm V • 34D32ci7 0DDD15T 4?b ■ Ifavm Ifsm VF tA= 25°C 10 ms, tv, max tv| = 25 °C VR = Vrrm tvj = tVjmax A V < 1 ,7 5 A ¡f = I f a v m Ir upec trr Wj max mA ns °c < 0 ,2


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    BYV42-200

    Abstract: BYV72E-200 BY359-1500 PBYR1540CT PBYR1535CT PBYR10-25 BY359X-1500 BYV42-150 BYV29F500 BYV72F-200
    Text: Philips Semiconductors Index Power Diodes Type Number BR211-140 BR211-160 BR 211-180 BR 211-200 BR211-220 BR211-240 BR 211-260 BR 211-280 Page 30 BR211SM-140 BR211SM-160 BR211SM-180 BR211SM-200 BR211SM-220 BR211SM-240 BR211SM-260 BR211SM-280 35 BY229-200 BY229-400


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    PDF BR211-140 BR211-160 BR211-220 BR211-240 BR211SM-140 BR211SM-160 BR211SM-180 BR211SM-200 BR211SM-220 BR211SM-240 BYV42-200 BYV72E-200 BY359-1500 PBYR1540CT PBYR1535CT PBYR10-25 BY359X-1500 BYV42-150 BYV29F500 BYV72F-200

    BYY 56

    Abstract: BYV 35 byv 65 BYV 200
    Text: ~V-03-0\ Epitaxial rectifier diodes Type V rrm Ifavm V 10 A 800 • 3M03217 DPDD151 i s t VF I fs m = 2 5 °C tA BYR 29-800 11E D eupec ms, ¡f Ir = I favm = 25 °C Outline = V rrm = t Vj max VR t v, A V mA ns < 1 ,7 5 < 0 ,2 < 60 UPEC Ivj max trr tv| max


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    PDF 03-Oj BYY 56 BYV 35 byv 65 BYV 200