Untitled
Abstract: No abstract text available
Text: SIYU R BYV26A . BYV26G 塑封超快速整流二极管 Plastic Ultra-Fast Recover Rectifier Reverse Voltage 200 to 1400V Forward Current 1.0 to 1.05A 反向电压 200 - 1400 V 正向电流 1.00 - 1.05 A 特征 Features DO-15 •低的反向漏电流 Low reverse leakage
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BYV26A
BYV26G
DO-15
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Untitled
Abstract: No abstract text available
Text: SIYU R BYV26A . BYV26G 塑封超快速整流二极管 Plastic Ultra-Fast Recover Rectifier Reverse Voltage 200 to 1400V Forward Current 1.0 to 1.05A 反向电压 200 - 1400 V 正向电流 1.00 - 1.05 A 特征 Features DO-15 ・低的反向漏电流 Low reverse leakage
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BYV26A
BYV26G
DO-15
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Diode BYV 95
Abstract: byv 16 BYV 08
Text: BYV12, BYV 13, BYV 14, BYV 15, BYV 16 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Lead Pb -free component • Compliant to RoHS directive 2002/95/EC and in
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BYV12,
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYV12
BYV13
BYV14
BYV15
BYV16
Diode BYV 95
byv 16
BYV 08
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byv36c
Abstract: BYV 36E
Text: BYV36A-BYV36E Fast Recovery Rectifiers VOLTAGE RANGE: 200 - 1000 V CURRENT: 1.5-1.6 A DO-15 Features Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Alcohol,Is opropanol and s im ilar s olvents
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BYV36A-BYV36E
DO-15
DO--15
BYV36D
BYV36E
BYV36A
BYV36C
BYV 36E
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BYV 200
Abstract: No abstract text available
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
J-STD-020,
O-263AB
O-220AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
BYV 200
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BYV 36E
Abstract: BYV36E BYV36A BYV36C BYV36D BYV 200
Text: BL GALAXY ELECTRICAL BYV36A Z -BYV36E(Z) VOLTAGE RANGE: 200 - 1000 V CURRENT: 1.5-1.6 A FAST RECOVERY RECTIFIERS FEATURES DO - 15 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Alcohol,Is opropanol and
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BYV36A
---BYV36E
DO--15
STD-202
BYV36A
BYV36C
BYV36D
BYV36E
BYV 36E
BYV36E
BYV36C
BYV36D
BYV 200
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BYV 200v
Abstract: No abstract text available
Text: BYV26A thru BYV26G Pb BYV26A thru BYV26G Pb Free Plating Product 1.0 AMP.ULTRA FAST RECOVERY RECTIFIERS SOD-57 Features D D D D D Unit: inch mm Glass passivated junction Hermetically sealed package Very low switching losses Low reverse current High reverse voltage
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BYV26A
BYV26G
OD-57
45K/W
100K/W
BYV 200v
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BYV32-150
Abstract: byv 20 BYV32100
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
ITO-220AB
BYV32
BYVF32
O-263AB
J-STD-020C,
ITO-220AB
2002/95/EC
BYV32-150
byv 20
BYV32100
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TR-R25
Abstract: BYV32 BYV 35 C
Text: BYV32 Series Dual Ultra Fast Rectifiers TO-220AB PRV : 50 - 200 Volts Io : 18 Ampere 0.154 3.91 DIA. 0.148(3.74) 0.055(1.39) 0.045(1.14) 0.113(2.87) 0.103(2.62) FEATURES : * * * * * * 0.415(10.54)MAX. Glass passivated chip junction High current capability
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BYV32
O-220AB
O-220AB
TR-R25
BYV 35 C
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BYV32-200E
Abstract: BYV32 BYVF32 JESD22-B102 J-STD-002 byv325
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
J-STD-020,
O-263AB
O-220AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
BYV32-200E
JESD22-B102
J-STD-002
byv325
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Untitled
Abstract: No abstract text available
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
ITO-220AB
BYV32
BYVF32
O-263AB
J-STD-020,
ITO-220AB
2002/95/EC
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BYV32
Abstract: BYV32-100 BYVF32 JESD22-B102D J-STD-002B
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
J-STD-020C,
O-263AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
BYV32-100
JESD22-B102D
J-STD-002B
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BYV32
Abstract: BYVF32 JESD22-B102D J-STD-002B
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
J-STD-020C
O-263AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
O-263AB
08-Apr-05
JESD22-B102D
J-STD-002B
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BYVB32-200-E3
Abstract: BYV32 BYVF32 JESD22-B102D J-STD-002B Diode BYV 95
Text: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AB
J-STD-020C,
O-263AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
BYV32
BYVF32
BYVB32-200-E3
JESD22-B102D
J-STD-002B
Diode BYV 95
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TMM BAT 48
Abstract: melf Schottky Byv 10-40 tm BYV 30 45 BAT 49
Text: r=7 SURFACE MOUNT DEVICES ^ 7# SGS-THOMSON IlO ÎÂ ilL iÊ ÎIiM ilÊ i GENERAL PURPOSE & INDUSTRIAL MINIMELF I MELF MINIMELF MELF SCHOTTKY DIODES Type VRRM 'F V •o* (mA) UHF and ultra fast switching TMM TMM TMM TMM BAR 19 BAT 29 BAT 19 BAT 45 |R (1)
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ps/20
0-20A
TMM BAT 48
melf Schottky
Byv 10-40 tm
BYV 30 45
BAT 49
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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SOD106A
Abstract: 1N5819 sod87 IMPLOTEC byv 20 diode 1N5817 Philips BYG90-40 BYG90-90 sod81
Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers SCHOTTKY-BARRIER DIODES OVERVIEW leaded Vr V 20 30 40 90 100 SOD81 1.0 A SOD87 1.0 A surface-mount SOD106A SOT223 1.0 A 1.0 A
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1N5817
BYV10-20
1N5818
1N5819
PRLL5817
PRLL5818
PRLL5819
OD106A
OT223
BYG90-20
SOD106A
1N5819 sod87
IMPLOTEC
byv 20 diode
1N5817 Philips
BYG90-40
BYG90-90
sod81
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BY407A
Abstract: BYV 88 800 BYV88-200 BY406A Scans-00109689 BY407 BYV88-600 MC44 NS100-MA CB-210
Text: fast recovery rectifier diodes diodes de redressement rapide Types •o V ■fsm r r n i < Vf / 10 ms 100 A < If ■r / V max A (V I 100 mA / Tamb = 25°C PR 05 PR 11 PR 21 PR 31 PR 41 400 mA / Tamb = 25°C MC MC MC MC MC 22 42 43 44 45 400 mA / Tamb = 25°C
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CB-210)
CB-26)
BYV88-
BY407A
BYV 88 800
BYV88-200
BY406A
Scans-00109689
BY407
BYV88-600
MC44
NS100-MA
CB-210
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byw32-200
Abstract: BY228-1500 BYV 200 byt 77 byv 25-200 BYV13 BYV14 BYV16 BYW32 BYW33
Text: TELEFUNKEN ELECTRONIC ñ lC J> • ñc!5D0tlb OOQSb^ B MAU6G 'T-O f^ O f Sinterglass Rectifiers Fast Rectifiers-Soft recovery—in Sinterglass package: ^ R _ 2 5 ns tt>*550 ns Type Electrical characteristics Vr W VRRM V A BY 203/12 S /16S /20S BY 228 BY 228/13 S
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BYW32
BYW33
BYW34
BYW35
BYW36
BYW72
BYW73
BYW74
BYW75
BYW76
byw32-200
BY228-1500
BYV 200
byt 77
byv 25-200
BYV13
BYV14
BYV16
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v26ev
Abstract: BYV26 byv26 500 V26C BYv26 200 BYV 200 YV26C
Text: Te m ic BYV26 TELEFUNKEN Semiconductors Very Fast Soft-Recovery Avalanche Rectifier Features • Glass passivated junction • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage Applications Switched mode power supplies
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BYV26
v26ev
BYV26
byv26 500
V26C
BYv26 200
BYV 200
YV26C
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BAS18
Abstract: BAT 43 Schottky Diodes BYV 200 BYV 35 C BAT45 BAR29 BYV 43 45 BAT 49 melf Schottky glass BAT29
Text: SCHOTTKY DIODES SELECTOR GUIDE RF AND ULTRAFAST SWITCHING If, continuous forward current / C0» / 30 mA 15 mA V rrm V DO 35 Glass MINIMELF Glass / SOT 23 Plastic DO 35 Glass 4 BAR 19 / MINIMELF Glass c SOT 23 Plastic @ VR V f @ If max max (V) (V) (mA) (PF)
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0-20A
BAS18
BAT 43 Schottky Diodes
BYV 200
BYV 35 C
BAT45
BAR29
BYV 43 45
BAT 49
melf Schottky glass
BAT29
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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BAT19
Abstract: DO-35 C3 BYV 35
Text: THO M SO N MIL ET S P A T I A U X SSE D Bi 1 0 E b 6 7 E Q G O C ma ? 205 • THCMV-<>j,-e% DISCRETE COMPONENTS C3 PRODUCT DESCRIPTION PACKAGE -2 g -2 S 03 O £ <=> . 0£ 5 > -» -O r> O < LU O ys ^ < 75 < LU SCHOHKY SMALL SIGNAL DIODES VRRM = 20 V Cmax =
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IN5711
Abstract: 1N3595DHD 4148 GERMANIUM IN5818 SMALL SIGNAL SCHOTTKY DIODES DO-35 IN270 CB-26 thomson 5ns BYV 200 in3595
Text: S G S-TH O M SO N D | - 712*1237 Ü D a 4 fl?4 THOMSON SEMI CONDUCTORS 0 T~ Y- ° — / ~ o 7 ~ germanium signal diodes Types •o Vr • f @ Vp = IV ■r m ax max min m ax V (mA) {mAJ <k A ) I Case Vr (V) gold bond Tamb = 2 5 °C / V 90 100 IN 270 200 100
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CB-26)
1N3595DHD
CB-102)
/10mA
CB-101)
IN5711
4148 GERMANIUM
IN5818
SMALL SIGNAL SCHOTTKY DIODES DO-35
IN270
CB-26
thomson 5ns
BYV 200
in3595
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