BYX 21 Search Results

diode byx 32

Abstract: diode byx diode byx 66-1000 DIODE REDRESSEMENT Diodes de redressement LA 7123 byx 21 diodes redressement thomson alimentation decoupage t03h
Contextual Info: S G STC S -¡-THOMSON D | 7 ^ 2 3 7 ÜODaaôT BYX 66-600, R BYX 66-1000, (R) O THOMSON-CSF 'DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02289 d r^oi-n \ HIGH VOLTAGE SUPERSWITCH RECTIFIERS

BYX 71 800

Abstract: diode byx alimentation decoupage THOMSON byx 21 BYX 71 600 diodes redressement thomson diode byx 66-1000
Contextual Info: STC D | S G S-¡-THOMSON O 7 ^ 2 3 7 ÜODaaôT BYX 66-600, R BYX 66-1000, (R) T H O M S O N -C S F 'DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02289 d r^oi-n \ HIGH VOLTAGE SUPERSWITCH

diode byx

Abstract: BYX67-1000 DIODE REDRESSEMENT BYX 13 400 R byx 21 diode byx 67-1000 diode byx 32 BYX/400 BYX67 400 BYX67-600
Contextual Info: STCd S G S—THOMSON O | 7 cî 2 c] c! 3 ? BYX 67-600, R BYX 67-1000, (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY R EC T IFIE R DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02299 D f-Û HIGH VOLTAGE V RRM 6 0 0 -+ 1 0 0 0 V

diode byx

Abstract: PAS 1066 byx 21
Contextual Info: STCd | S G S—THOMSON O 7 cî 2 c] c!3? BYX 67-600, R BYX 67-1000, (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02299 D f-Û HIGH VOLTAGE V RRM 600 -+ 1000 V 'F (A V ) <Tcm « 100°C)

Contextual Info: G SÌC D 1• 7=1^23? 00G2271 4 S-TH O M SO N Q BYX 61-50, R BYX 61-400, (R) T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPEBSWITCH FA ST R EC O V ERY R E C T IF IE R DIODES D IO D E S D E R E D R E S S E M E N T R A P ID E S 59C 02271 d T - o S V / '

Contextual Info: s G S-THOMSON I^ Q uT d” ! 7^5=1237 Q QQ 2 G Û 3 1N 3909—1N 3913, R BYX 64-600, (R) THOMSON-CSF DIVISION SEMICONDUCTEURS DISCRETS. SUPERSWITCH FAST RECOVERY RECTIFIER DIODES D/ODES DE REDRESSEMENT RAPIDES 59 C 0 2 0 8 3 FAST RECOVERY SUPERSWITCH RECTIFIERS

Contextual Info: £ÿ7 SGS'THOMSON D ^@llLi©ra K!lQ®i BYX 65-50 -> 400 FAST RECOVERY RECTIFIER DIODES • VERY FAST RECOVERY TIME ■ VERY LOW FORWARD RECOVERY TIME ■ VERY LOW RECOVERED CHARGE APPLICATIONS ■ DC AND AC MOTOR CONTROL ■ SWITCH MODE POWER SUPPLY ■ HIGH FREQUENCY CHOPPERS

65400

Contextual Info: S^C D I 7 ^ 2 3 7 -THOMSON 59C 022 80 Q THOMSONaCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH Q0Ü22ÖG 0 7"^ W 7 BYX 6 5 -5 0 , R BYJC 6 5 “ 4 0 0 (R) F A S T R E C O V E R Y R E C T IF IE R D IO DES DIODES DE REDRESSEMENT RAPIDES FAST RECOVERY

Contextual Info: SÌC S G S-THGMSON D | 7^2^37 D0Ü2Q7M T:.ù X '/ ? 5 9C 02074 D 1 N 3 8 9 9 —1 N 3 9 0 3 , R O THOMSON-CSF DIVISION SEMICONDUCTEURS DISCRETS BYX 6 3 -6 0 0 , (R) SUPERSWITCH FA ST R ECO V ERY R E C T IF IE R DIODES DIODES DE RED R ESSEM EN T RAPID ES

BYX58-200

Abstract: byx 21 BYX 13 400 R Diodes de redressement MR05 PY 55 byx58
Contextual Info: DIODES DE R E D R E SSE M E N T RAPIDE fast recovery rectifier diodes V r WM TYPES / 100 m A *M R *M R *M R *M R •M R / 400 m A 22 42 43 44 45 / * BA 157 * BA 158 * BA 159 / 1 A / * LQ 1 tamb — 25 C / 2 4 6 8 tamb = 25°C / PLR2T PLR 8 T PL R 15 T 1 A

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

sy 170

Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
Contextual Info: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs­ Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170

Diode 1N4007 DO-7 Rectifier Diode

Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
Contextual Info: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

MX10E8050IQC

Abstract: MX10E8050IUC dsca 125 MX10E8050IPC byx 21
Contextual Info: PRELIMINARY MX10E8050I FEATURES - 80C51 CPU core - 3.0 ~ 3.6V voltage range - On-chip Flash program memory with in-system programming ISP - Operating frequency up to 40MHz - 64K bytes Flash memory for code memory - 1280 bytes internal data RAM - Low power consumption

axial zener diodes marking code c3v6

Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Contextual Info: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.

DSCA 114 communication board

Abstract: MX10E8050IQC BYX 13 400 R
Contextual Info: PRELIMINARY MX10E8050I MX10E8050X Major Difference Product Feature Default ISP IAP Package Clock mode MX10E8050IPC MX10E8050IQC 40Pin PDIP x 12 YES YES 44Pin PLCC MX10E8050IUC 44Pin LQFP MX10E8050XPC 40Pin PDIP MX10E8050XQC x6 NO NO MX10E8050XUC P/N:PM0887

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

MB88F332

Abstract: apix IC201-001 CU80F Cu80 FPT-208P-M06 MB88F33
Contextual Info: FUJITSU SEMICONDUCTOR MB88F332 FLASH Memory Product Parallel Writer Specification Ver.1.0 FUJITSU MICROELECTRONICS LIMITED 【Revision History】 Ver. 1.0 Data 2008/12/16 Description First Editinon 【Overview】 Items Detail Product name MB88F332 FLASH memory size

BYX 71 800

Abstract: BYX 71 600 VENUS 7110-0
Contextual Info: Sb E D • 7^2=1237 0041^35 5Q4 ■ S G T H S G S- TH OM SON SCS-THOMSON T '0 J 'f 7 ’ B Y T 71-100 A iL ^ H M O Û S 800 A FAST RECOVERY RECTIFIER DIODES ■ HIGH VOLTAGE CAPABILITY ■ FAST AND SOFT RECOVERY ■ THE SPECIFICATIONS AND CURVES EN­ ABLE THE DETERMINATION OF trr AND Irm

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

TPS73101-EP

Abstract: TPS73115-EP TPS73150-EP TPS731125-EP TPS73125-EP TPS73132-EP TPS73118-EP TPS73133-EP TPS73130-EP
Contextual Info: TPS731xx www.ti.com . SBVS034M – SEPTEMBER 2003 – REVISED AUGUST 2009 Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection

Contextual Info: Communication ICs Read/Write Amplifier for FDD BH6629BFS T h e B H 6 6 2 9 B F S , a r e a d /w r ite 1C d e s ig n e d fo r flo p p y d is k d riv e s , has a re c o rd in g s y s te m th a t p u ts to p p rio rity on s a d d le m a rg in . O ffe rs m u lti-s te p s w itc h in g o f w rite c u rre n t, w h ile d e n s ity a n d in n e r e d g e /o u te r e d g e a re s w itc h e d