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    BYY58 1200 Search Results

    BYY58 1200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPN12008QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPN12006NC
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    PTH12000LAZT
    Texas Instruments 0.8 to 1.8 V 6-A, 12-V Input Non-Isolated Wide-Adjust Module 5-Surface Mount Module -40 to 85 Visit Texas Instruments
    TPS51200DRCRG4
    Texas Instruments 3A Sink/Source DDR Termination Regulator w/ VTTREF Buffered Reference for DDR2, DDR3, DDR3L and DDR4 10-VSON -40 to 85 Visit Texas Instruments Buy
    TPS61200DRCT
    Texas Instruments 0.3V Input Voltage Boost Converter with 1.3A Switches and ''Down Mode'' in 3x3 QFN 10-VSON -40 to 85 Visit Texas Instruments Buy

    BYY58 1200 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BYY58-1200
    Diodes Incorporated Silicon Power Rectifier Diode Original PDF 117.5KB 5

    BYY58 1200 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BYY58

    Abstract: BYY57 800 byy58 1200 BYY58-400 BYY57/700 Byy57 BYY58/400 "Power rectifier Diode" BYY58-600 BYY57-150
    Contextual Info: BYY57 / BYY58 35A Silicon Power Rectifier Diode Part no. Description The BYY57/58 are hermetically sealed 35Adiodes, which are available in different reverse voltage classes up to 1500V. The diodes can be delivered with limited forward voltage and reverse current differences for


    Original
    BYY57 BYY58 BYY57/58 35Adiodes, BYY57-1200 BYY58sales BYY58 BYY57 800 byy58 1200 BYY58-400 BYY57/700 BYY58/400 "Power rectifier Diode" BYY58-600 BYY57-150 PDF

    byy57-58

    Abstract: BYY57-150 BYY57-1200 byy58-150 BYY57/150 BYY57 hermetic press-fit diode byy57-500 BYY57-200 BYY58-200
    Contextual Info: BYY57 / BYY58 35A Silicon Power Rectifier Diode Part no. Description The BYY57/58 are hermetically sealed 35Adiodes, which are available in different reverse voltage classes up to 1500V. The diodes can be delivered with limited forward voltage and reverse current differences for


    Original
    BYY57 BYY58 BYY57/58 35Adiodes, byy57-58 BYY57-150 BYY57-1200 byy58-150 BYY57/150 hermetic press-fit diode byy57-500 BYY57-200 BYY58-200 PDF

    Contextual Info: BYY57 / BYY58 35A Silicon Power Rectifier Diode Part no. Description The BYY57/58 are hermetically sealed 35Adiodes, which are available in different reverse voltage classes up to 1500V. The diodes can be delivered with limited forward voltage and reverse current differences for


    Original
    BYY57 BYY58 BYY57/58 35Adiodes, BYY57-1200 PDF

    Contextual Info: Silicon rectifier diodes BYY57/BYY 58 FEATURES • Forward current 35 A • Reverse voltage 75 V - 1500 V • hermetic press-fit package • Available in different modifications of the package APPLICATIONS • Rectifying in car generators • Power supplies


    OCR Scan
    BYY57/BYY BYY57 BYY58 57/6e PDF

    BYY58-100

    Contextual Info: BYY 57 / BYY 58 Silicon rectifier diodes FEATURES • Forward current 35 A • Reverse voltage 75 V - 1500 V • Available in different modifications of the package APPLICATIONS • Rectifying in car generators • Power supplies • Rectifier bridges PIN CONNECTIONS


    OCR Scan
    BYY58 Ti70S7fl BYY58-100 PDF

    D668N

    Abstract: D798N400 d629n D4409 Leistungsdiode d452 BYY 56 D4409N D668N2000 D668
    Contextual Info: A E G - A K T I EN GE SEL LS CHAFT 17E D • QOBWS 1 ■ AEGG Leistungsdioden Power diodes Diodes de puissance Typ Type V rrm If r m s m V' A If s m /¡ 2dt t-10nn* «vp •vjnnax 45°C t-IOnn* M" 45°G •vjmax kA kA fl?S A*s If a v m / ì c If a v m V TO


    OCR Scan
    tA-45 BYY57/ BYY58/ 20x20 100x125 D24NR 41/mln. D668N D798N400 d629n D4409 Leistungsdiode d452 BYY 56 D4409N D668N2000 D668 PDF