BZX85 - C5V1 Search Results

BZX85-C12

Abstract: bzx85-c20 BZX85C15
Contextual Info: Zener Diodes BZX85 Series 1.3 W Zener Diodes DO-41 Glass Package TA = 25 °C Type Maximum Zener Impedance Zener Voltage Range* at BZX85-C3V6 BZX85-C3V9 BZX85-C4V3 BZX85-C4V7 BZX85-C5V1 BZX85-C5V6 BZX85-C6V2 BZX85-C6V8 BZX85-C7V5 BZX85-C8V2 BZX85-C9V1 BZX85-C10

BZX85-G12

Abstract: BZX85g BZX85 ZENER BZX85C15
Contextual Info: I T T SEMICONDUCTORS fi? D E Ï 4b04T5S D00534D T ZENER DIODES 7 - /''- y .r 1 BZX85 Series 1.3 W att Glass Zener Diodes in DO-41 Package TA = 25 °C Type BZX85-C3V6 BZX85-C3V9 BZX85-C4V3 BZX85-C4V7 BZX85-C5V1 BZX85-C5V6 BZX85-C6V2 BZX85-C6V8 BZX85-C7V5

BZX85

Abstract: BZX85 C27 BZX85-C3V6 BZX85-C62 bzx85c62 BZX85 - C22
Contextual Info: BZX85-C3V6 THRU BZX85-C62 ZENER DIODES FEATURES DO-41 Glass min. 1.102 28.0 max. .161 (4.1) min. 1.102 (28.0) ♦ Silicon Planar Power Zener Diodes ♦ For use in stabilizing and clipping circuits with high power rating. max. ∅ 0.102 (2.6) Cathode Mark

BZX85

Abstract: BZX85 C27 BZX85 - C16 BZX85 ZENER c82 004
Contextual Info: BZX85-C3V6 thru BZX85-C200 DO-204AL DO-41 Zener Diodes e g a t l o V ed e d n g e t n x a E R Features • Silicon Planar Power Zener Diodes. • For use in stabilizing and clipping circuits with high power rating. • The Zener voltages are graded according to the

BZX85

Abstract: BZX85C3V6 BZX85-C3V6 BZX85-C62
Contextual Info: BZX85-C3V6 THRU BZX85-C62 Zener Diodes DO-41 FEATURES ♦ Silicon Planar Power Zener max. .161 4.1 min. 1.102 (28.0) Diodes ♦ For use in stabilizing and clipping circuits with high power rating. max. ∅.102 (2.6) ♦ The Zener voltages are graded according to

BZX85 C27

Abstract: BZX85
Contextual Info: BZX85-C3V6 THRU BZX85-C62 ZENER DIODES FEATURES DO-41 Glass min. 1.102 28.0 max. .161 (4.1) min. 1.102 (28.0) ♦ Silicon Planar Power Zener Diodes ♦ For use in stabilizing and clipping circuits with high power rating. max. ∅ 0.102 (2.6) Cathode Mark

Contextual Info: BZX85-C3V6 THRU BZX85-C62 ZENER DIODES FEATURES DO-41 G lass ♦ Silicon Planar Power Zener Diodes ♦ For use in stabilizing and clipping circuits with high power rating. max. 0 0.102 2.6 ♦ The Zener voltages are graded according to the international E 24 standard. Replace suffix “C” with “B”

Contextual Info: BZX85-C3V6 THRU BZX85-C62 Zener Diodes DO-41 FEATURES ♦ Silicon Diodes Planar Power Zener ♦ For use in stabilizing and clipping circuits with high power rating. |j| ^ a x . 0 .1 0 2 2.6 ♦ The Zener voltages are graded according to the international E 24 standard. Replace suffix

Contextual Info: 16011 Fooihill Boulevard Irw indale. CA 91706 Tel: 818 969-1315 FAX: (818)969-0965 EIC Semiconductor, Inc. T he pUllic m aterial carries U /L recognition 9 4 V -0 . -BZX35Î N oaiiatl Zcacr TY PE V zO lzt (V) BZX85 C2V7 BZX85 C3V0 BZXSS C3V3 BZXSS C3V6 BZXS5 C3V9

BZX85 C27

Contextual Info: BZX85 Silicon Planar Power Zener Diodes for use in stabilizing and dipping circuits with high power rating. The Zener voltages are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages upon request. -Cathode

BZX85

Abstract: bzx c36 BZX C16 BZX85 ZENER bzx c5v6 BZX85 C27 BZX85 - C5V1 BZX85 - C6V2 BZX85 - C18 c5v6
Contextual Info: BZX85. SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E 24 standard. Other tolerances and higher Zener voltages are upon request. Absolute Maximum Ratings Ta = 25 OC

BZX85

Abstract: BZX85 C27 BZX85- C30 BZX85C15 D041
Contextual Info: Tem ic S e m i c o n d u c t o r s D041 Zener Diodes continued . Vznoè. Part Number :V'-M- IZT Î Electrical Characteristics %r ' -• ;J' a raA j «jK « te - a I % at Vr [ «A | j*A TKvz V Package %/K Z-Diodes PV = 1.3 W BZX85/C2V7 2.7 80 2.5 to 2.9 <20

Contextual Info: CRIMSON SEMICONDUCTOR INC T=| DlF ESlMOTt. Q O O O a b O 2514096 C R I MSON SEMI C O N D U C T O R INC 99D 00360 D T~' ¡ / '/ $ ZENER DIODES Z w w rO lo d M with Py - 1 , 3 W Nota* and < Eterificai chancUrtctic« Kcfwn V BZX 85/C 2V 7 BZX85/C3V0 BZX 85/C 3V 3

Contextual Info: BZX85C Series SILICON ZENER DIODES DO - 41 VZ : 2.4 - 270 Volts PD : 1.3 Watts FEATURES : * Complete Voltage Range 2.7 to 270 Volts * High peak reverse power dissipation * High reliability * Low leakage current 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2)

BZX85

Abstract: zener diode marking c24 DIODE BZX 62 BZX85 C27 diode zener BZX85 C 5.1 C82 diode BZX85C C100 C110 C120
Contextual Info: BZX85C Series SILICON ZENER DIODES DO - 41 VZ : 2.4 - 200 Volts PD : 1.3 Watts FEATURES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2)

BZX85

Abstract: diode zener bzx c9v1 BZX85 C27 DIODE BZX 24 BZX85-C15 C82 diode diode zener BZX85 C 5.1 BZX85C c4v3 zener diode C110
Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com BZX85C Series SILICON ZENER DIODES

U2391B

Abstract: 32768 quartz
Contextual Info: Tem ic U2391B S e m i c o n d u c t o r s Quartz Controlled Pulse Generator Description The monolithic integrated bipolar circuit, U2391B, is designed as a quartz controlled pulse generator. The tristate input enables the selection of different pulse period durations. The internal switch-on monitoring

1N4I48

Contextual Info: Temic U2391B S e m i c o n d u c t o r s Quartz Controlled Pulse Generator Description The m onolithic integrated bipolar circuit, U2391B. is designed as a quartz controlled pulse generator. The tristate input enables the selection o f different pulse period durations. The internal sw itch-on m onitoring

BC237 NATIONAL SEMICONDUCTOR

Abstract: Quartz 32768 32768 quartz transistor bc237 bc337 BC237 national bc237 telefunken U2391B 1n4148 v4 BZX85 C27 BZX85 series
Contextual Info: U2391B Quartz Controlled Pulse Generator Description The monolithic integrated bipolar circuit, U2391B, is designed as a quartz controlled pulse generator. The tristate input enables the selection of different pulse period durations. The internal switch-on monitoring

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP