C 029 TRANSISTOR Search Results

schema UP 5135

Abstract: voltmetre diode catalogue military passive component bridge rectifier Facon v10471 et 1102 EUROFARAD 5027A zx 1052
Contextual Info: NOUVELLE EDITION NEW ISSUE Filtres “EMI - RFI” “EMI - RFI” Filters CATALOGUE 029 PRODUCT CATALOG 029 w w w. e u r o f a r a d . c o m certifications ISO 9002 : 001-96 / 005-96 Code OTAN : F 1379 NATO Code : F 1379 S.A.S. au capital de 20 246 400 €

ASI10720

Abstract: VHB1-28T
Contextual Info: VHB1-28T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-39 The ASI VHB1-28T is Designed for B C 45° ØA FEATURES: • • • Omnigold Metalization System F MAXIMUM RATINGS G IC 0.4 A VCBO 55 V VCEO 30 V ØD E 5 W @ TC = 25 C PDISS O O .029 / 0.740

ASI10711

Abstract: VHB1-12T
Contextual Info: VHB1-12T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB1-12T is Designed for PACKAGE STYLE TO-39 FEATURES: B C 45° ØA • • • Omnigold Metalization System ØD E F MAXIMUM RATINGS IC 400 mA MAX VCBO 40 V VCEO 20 V VCER 40 V PDISS O O .029 / 0.740

mp02907

Abstract: P0290
Contextual Info: MPQ2906 MPQ2907,A* M A X IM U M RATINGS Rating Symbol C o lle cto r-E m itte r Voltage M P 029 06 M PQ2907A MPQ2907 -4 0 VCEO -6 0 Vdc Vdc C ollector-B ase Voltage VCBO 60 Em itter-Base V o ltage vebo - 5 .0 Vdc <C -6 0 0 m A dc C o lle ctor C urrent — C ontinuous

2SC3157

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC3157 Features • • NPN Silicon Power Transistors With TO-220F package Amplifier applications Maximum Ratings Symbol V CEO V CBO V EBO

br 101

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC4517A Features • • NPN Silicon Power Transistors With TO-220F package Switching regulator and general purpose Maximum Ratings Symbol

buf405ax

Abstract: BUF405AXI BUF405
Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# BUF405AXI Features • • • NPN Silicon Power Transistors High voltage, high speed switching NPN transistors. With TO-220F package Intended for use in horizontal deflection circuits of color television

transistor d 2389

Contextual Info: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm

NEC Ga FET

Abstract: Nec K 872 NE325S01 AM/SSC 9500 ic data
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for DBS

D2394

Abstract: transistor d1071 d1071 transistor transistor d774 transistor NEC D 882 p transistor D798 D774 transistor D1547 TRANSISTOR d1677 TRANSISTOR D405
Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm hetero junction to create high mobility electrons.

NEC k 2134 transistor

Abstract: nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612
Contextual Info: PRELIMINARY DATA SHEET_ M F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm

transistor ne425s01

Abstract: NEC Ga FET marking L C10535E NE425S01 NE425S01-T1 NE425S01-T1B NEC Ga FET marking C
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent

low noise, hetero junction fet

Abstract: NE325S01 NEC Ga FET marking L C10535E NE325S01-T1 NE325S01-T1B TRANSISTOR 318 NEC Ga FET marking A ne325
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE325S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent

Transistor D 1881

Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high m obility electrons. Its excellent

2N3735

Abstract: 2N3735L 2N3737 2N3737UB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3737 2N3735L 2N3737UB JAN

2n3499

Contextual Info: RAYTHEON/ SEM ICO ND UC TO R T4 CC □□□5551 SMALL SIGNAL TRANSISTORS PRODUCT SPECIFICATIONS RAYTHEON. DËÏ7ST73bD High Voltage General Purpose Amplifiers and Switches NPN Description Popular Types General purpose am plifier and switch for high voltage applications. The

j1 3009

Contextual Info: european space agency agence spatiale européenne Pages 1 to 51 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS SILICON GATE, STATIC, 64K 8192 x 8 BIT ASYNCHRONOUS RANDOM ACCESS MEMORY WITH 3-STATE OUTPUTS, BASED ON TYPE HM65664 ESA/SCC Detail Specification No. 9301/029

WJ-CA81-1

Abstract: WJ-A81-1 612025 ja81 TRANSISTOR 2N 4401
Contextual Info: uuU A81-1 /SMA81-1 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: >30 dB TYP. LOW NOISE: 2.4 dB (TYR) HIGH GAIN: 25 dB (TYR) HIGH LEVEL OUTPUT: +13.5 dBm (TYR) Outline Drawings A81-1 Specifications”

t039 package transistor pin mount

Abstract: 2n3440 2n3440 equivalent
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN LOW POWER SILICON TRANSISTOR

transistor NEC D 822 P

Abstract: nec gaas fet marking NEC Ga FET transistor ne425s01
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high m obility electrons. Its excellent

WJ-A81-1

Abstract: SMA81-1 WJ-A81
Contextual Info: WJ-A81-1 /SMA81-1 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: >30.0 dB TYP. LOW NOISE: 2.5 dB (TYP.) HIGH GAIN: 24.5 dB (TYP.) HIGH EFFICIENCY: 25 mA @ +15 VDC (TYP.) \ • ' : *i * *. ' - ' a ' , ' . im* t :

nec a 634

Abstract: Nec K 872 NEC Ga FET C band FET transistor s-parameters NEC 1132 NEC Ga FET marking D
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for DBS

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/512 DEVICES LEVELS 2N4029 2N4033 2N4033UA 2N4033UB

transistors 505

Abstract: 2N3868 2N6303
Contextual Info: 2N3867 2N3868 2N6303 PNP 3 AMP POWER TRANSISTORS GEOMETRY 505 •HIGH SPEED »VCEO sus to 80V »HIGH IT m a x im u m ratin g s ' PARAMETER SYMBOL 2N3S67 2N3868 80 Collector Emitter Voltage VCEO Collector Base Voltage VCBO 45 65 80 Emitter Base Voltage VEBO