C 10 ST Search Results

elco 96 pin

Abstract: 20-8457-064-005-901 10 8457 048 002 025 ELCO 8457 5 x 32
Contextual Info: Male Style 1/2 C Series 8457 – 3 rows 3 x 16 Contact Design and Termination Length Part Number Performance classes according to DIN 41612 II I Number of Contacts Loading Description 48 a + b + c fully loaded 10 8457 048 001 025 10 8457 048 001 049 32 a + c fully loaded

Optocoupler 16 Pin quad sop

Contextual Info: SFH6916 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, Quad Channel, SOP-16, Half Pitch Mini-Flat Package i179076-4 FEATURES A 1 16 C C 2 15 E A 3 14 C C 4 13 E A 5 12 C C 6 11 E • Temperature stable A 7 10 C • Low coupling capacitance

TC518129

Abstract: de interlace
Contextual Info: TOSHIBA TC518129AP/ASP/AF/AFW-80/10/12 TC518129APL/ASPL/AFL/AFWL30/10/12 TC518129AFTLS0/10/12 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 8 1 2 9 A is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s by 8 bits. The TC 5 18 1 29A utilizes

D-68623

Abstract: DGS9-03AS
Contextual Info: DGS 9-03AS DGS 10-03A IFAV = 11 A VRRM = 300 V CJunction = 9 pF Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM Type V Marking V Circuit Package A = Anode, C = Cathode , TAB = Cathode on product A 300 300 DGS 9-03AS C A 300 300 DGS 10-03A C

TMS47256

Abstract: S124C 47256
Contextual Info: TMS47256 32,768-WORD BY 8-BIT READ-ONLY MEMORY JUNE 1 9 8 3 - N PACKAGE 3 2 ,7 6 8 X 8 Organization [TOP VIEW Fully Static No Clocks, No Refresh) NCC 1 W 2 8 27 A12C 2 26 A7 C 3 25 A6 C 4 24 A5 C 5 23 A4 C 6 22 A3 C 7 21 A2 C 8 20 A lC 9 AO C 10 19 Q l C 11 18

Contextual Info: SN54BCT2828B, SN74BCT2828B 10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE INVERTING OUTPUTS _ D3635, SEPTEMBER 1990 S N 54B C T282B B . . . J T P A C K A G E BiCMOS Design Substantially Reduces S N 7 4B C T 28 2 8B . . . D W O R N T P A C K A G E

PH1819-10

Abstract: Bv 42 transistor j73 diode TRANSISTOR BV 32 PH1819
Contextual Info: ,z= i-s = -A= =c an AMP company * = .-= - = - Wireless Bipolar Power Transistor, 1OW 1.78 - 1.90 GHz l l l l v2.00 ,744 :lE.SZ Features l PH1819-10 5s: .,4 22 +-, / Designed for Cellular Base Station Applications -30 dBc Typ 3rd IMD at 10 Watts PEP

Contextual Info: TRKMS037 *T R K M S 0 3 7 * l/Q - .0 2 5 .18 MAX MODULATOR STYLE - 0 9 PACKAGE TRAK MICROWAVE l/Q SPECIFICATIONS MODULATOR LO FREQUENCY LO POWER LEVEL M IQ /3 F F - 0 9 C INSERTION LOSS l/Q l/Q RATE LEVEL 1.8 - 2 .0 GHz + 10 dBm MAX 10 dB MAX DC - 10 MHz

Contextual Info: PART NUMBER: 152MWS103KT METALLIZED POLYESTER AXIAL LEAD, UP TO 10 KVDC PARTS ARE ROHS COMPLIANT FEATURES Axial lead, self healing metallized polyester. High voltage 2500 to 10000VDC ELECTRICAL SPECIFICATIONS C apacitance: 0.0015 uF T ole ra n ce : -10 %, +10 %

welder circuit diagram

Abstract: welding rectifier circuit welding rectifier WELDER DIAGRAM 3000BD21
Contextual Info: ^ TOSHIBA -CDISCRETE/OPTO}- DE j TD 1 ?a S D 0 0 0 5 3 4 7 1 I ~T~ Z Z - U RECTIFIER STACK RECTIER STACK FOR DC WELDER Type O u tp u t C u r r e n t ( 2 0 C y c l e s , 10% ) 1600FD2E1W 8000A 3000BD2E1W 13000A 1600FD4B1W 8000 A 3000BD4B1W 13000A C STACK

ha5006

Abstract: transistor amplifier 3 ghz 10 watts
Contextual Info: HBH PRELIMINARY C-Band 10 W Amplifier Microwave GmbH HA5006 General Description The HA5006 is a C-band power amplifier which covers the frequencies from 5.3 to 5.9 GHz with a gain of 43 dB and an output power of 10 Watts. The amplifier uses a single supply voltage, is DC regulated and has reverse polarity protection and

MPU85-347

Contextual Info: TOSHIBA CUC/UP . WE C • iai7 2 4 1 _ 0 Q ia0 D 1 7 ■ 1 ~ - 5 Z 'J 3 '0 3 TOSHIBA TMP82C255A/TMP82C265A CMOS PROGRAMMABLE PERIPHERAL INTERFACE TMP82C255AN-2 / TMP82C265AF-2 TMP82C255AN-10 / TMP82C265AF-10

74BCT29827

Abstract: LT 7242
Contextual Info: SN74BCT29827A, SN74BCT2982BA 10-BIT BUFFERS AND BUS DRIVERS WITH 3-STATE OUTPUTS D 2 9 7 7 . APRIL 1 9 8 7 -R E V IS E D M A Y 1 9 8 8 DW OR N T P A C K A G E 1 BiCMOS Design Substantially Reduces Standby Current TO P V IEW G ill 1 A id 2 A2 C 3 A3 C 4

IEC60747-5-5

Abstract: VO0630 DIP8 Package k
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . 10 MBd High - Spe e d FEATURES AND BENEFITS • 10 MBd high-speed data rate in DIP-8 and SOIC-8 packages • Ambient operating temperature from –40 °C to +100 °C • Utilizes open-drain NMOS transistor output for lower output leakage

00F1H

Contextual Info: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles

l481

Contextual Info: LINEAR INTEGRATED CIRCUITS TYPE TL481C 10-STEP LOGARITHM IC ANALOG LEVEL DETECTOR B U L L E T I N N O . D L -S 1 2 7 3 6 , D E C E M B E R 1 9 7 9 NG D U A L-IN -LIN E PACKAGE TOP VIEW 10 Comparators Logarithmically Digitize Analog Input Signals High Input Impedance . . . 100 kn Typical

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER 3,75 [0,148] — 1100.90 [00,035] 20 PLS. LDD-SMA3006RI-TR 0,80 [0,032] m REV. A B C 20 10,00 [0,394] 1,00 [0,039] (10 PLS,) JL JL 12,00 [0,472] E.C.N. E.C.N. E.C.N. E.C.N. m LEAD FREE REFLOW PROFILE 10 SEC. MAX. PARAMETER

TQP4M3007

Contextual Info: TQP4M3007 Data Sheet SP3T High Power 2.6V CDMA Antenna Switch Features Functional Block Diagram Top View V3 N/C ANT N/C 12 11 10 Pin 1 1 • • 9 V1 • RF3 2 8 RF1 N/C 3 7 N/C • • • • • • 3.0 +/- 0.05 mm 4 5 6 N/C RF2 V2 3.0 +/- 0.05 mm pHEMT GaAs MMIC Die

Contextual Info: PART NUMBER: 226DER2R5SKV SU P E R C A P A C IT O R Parts are RoHS compliant E LECTRICAL SPECIFICATIONS C a p a c ita n c e : 22 F T o le ra n c e : -15 % , +10 T e m p e ra tu re ra n g e : -25°C to +70°C W VDC: 2.5 V olts DC ESR AC :60 Ohms at 1 kHz and 20°C

Contextual Info: 3.3V CMOS 10-BIT BUS TRANSCEIVER WITH 3-STATE OUTPUTS, 5 VOLT TOLERANT I/O FEATURES: - DESCRIPTION: 0 .5 M IC R O N C M O S T e c h n o lo g y E SD > 2 0 0 0 V p e r M IL -S T D -8 8 3 , M e th o d 3 0 1 5 ; > 2 0 0 V using m a c h in e m o d e l C = 2 0 0 p F , R = 0

Contextual Info: REV. DESCRIPTION E F G Engineering Update w/o Changes Updated 3.3mm Reference Dimension Material Update DATE APPROVED 02/26/04 09/30/08 10/07/09 M. C. M. C. T. Y. 0.170 [4.3mm] SQ. 0.130 [3.3mm] REF. TYP. 0.O25±.OO5 TYP. 0.100 [02.5mm] REF. C/L 3. TOLERANCE "L" DIMENSION:

Contextual Info: TE NNL10 Series OBSOLE www.murata-ps.com Non-Isolated DC/DC Converters SELECTION GUIDE1 Recommended alternative: OKY-T/10-W5P-C >> click here to download the data sheet FEATURES „ RoHS compliant „ Industry standard footprint „ Short circuit protection

Contextual Info: FORM 0 3 2 4 0 5 - 1 C 4 DATE APPD 04-23-13 GP REVISION LTR 042213-JH01: UPDATE TEST DATA 0.250 [260.4] L edtronics Inc. S L L 0 0 4 P -9 X 6 0 W -X P W - 0 0 5 10 0 -2 4 0 V /2 7 7 V 3 0 0 W 5 0 /6 0 H Z Z Z C O N F O R M S TO U L STD. 1 5 9 8 C E R T IF IE D TO C SA STD. C 2 2 .2 No. 2 5 0 . 0 - 0 8

Contextual Info: UNCONTEOLLED DOCUMENT SSL-LX4 673A D -LA 20 PA RT N U M B E R DATE 15 [ 0 . 2 4 2 ] - C REV. E.C.N. NUMBER AND REVISION COMMENTS REV. 07.03.00 E.C.N. #10 6 37 . A 07.10.01 E.C.N. #10BRD R. & REDRAWN IN 3D. B 08.17.12 E.C.N. #10BRD R. & REDRAWN. C E LE C T RO -O P TICA L CHARACTERISTICS T a = 2 5 'C