C 1008 Y TRANSISTOR Search Results

Contextual Info: IMAGE SENSOR m CCD area image sensor , m w m - :• S7960/S7961 -1008 Back-thinned FFT-CCDs for high-speed application S 7 9 6 0 /S 7 9 6 1 -10 0 8 a re F F T -C C D im a g e se n so rs s p e c ific a lly d e s ig n e d fo r high sp e e d o p e ra tio n . By e m p lo y in g a w id e band w id th o n -c h ip

Contextual Info: V e r s io n 2 . 0 , 2 0 M a r 2 0 1 3 CoolSET -F3R80 I C E3 AR 1008 0JZ -T O f f -Lin e S MP S Cur ren t M od e Co n tr olle r wit h in t eg ra te d 8 00 V Co o lMO S ® a n d S ta rt up c ell b ro wn ou t & fr eq ue n c y jit t er in DI P -7 P o w e r M a n a ge m e n t & S u p p ly

C 1008 y transistor

Abstract: 1008 transistor transistor 1008 sC1008
Contextual Info: K SC 1008 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92 • Complement to KSA708 • High Collector-Base Voltage V cbo=80V • Collector Current lc=700mA • Collector Dissipation Pc“800mW ABSOLUTE MAXIMUM RATINGS TA=25*C

Contextual Info: h 7 > y ^ ^ / T ransistors f t E T IU I A FM A6 PNP V ' j 3 > h 7 > y 7 ^ -f >/S[ —£ y /V lnverter Driver Epitaxial Planar Dual Mini-Mold PNP Silicon Transistor • 1 7 , - M - 5 - T T tiiH /D im e n s io n s Unit : mm) - J l ’ K /'f -J tT ~ v T

C 1008 y transistor

Contextual Info: ROHM CO MGE LTD B !> 7 Ö S Ö cn cl Q Q D h B Q b ô SRHM FMA6 / T r a n s is t o r s , , - - •■■■■ 7 - y j- 9 0 - ¿ 'M t *a r ; u $ - î k pnp v >; =i > h - 7 > ^ ^ O / S —£ K 7 < /V ln v e r te r Driver Epitaxial Planar Dual Mini-Mold PNP Silicon Transistor

2SB1008

Contextual Info: Is ~ 7 > V $ /T ra n sisto rs 2SB 1008 2SB1008 PNP h> i5;Ji>jSW^]iill iffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor • • 1 # - ' ) > W f ^ j i l S l / D i m e n s i o n s U n it : m m ) h > t ^ T - h FET'Æ >5o 2)BEfôlCjfô4kQCD$ÊÎ)t£F*3j&o >Sjf$

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

la 4127

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

C 1008 y transistor

Abstract: 2sb1008
Contextual Info: 2SB1008 h ~7 > y 7 . $ /Transistors 2SB 1008 Epitaxial Planar PNP Silicon Transistor Darlington & JS '$S ^*tM iffl/Low Freq. Power Amp. • • 1) $ * } R - + ;£ l2 / D i m e n s i o n s ( U n i t : m m ) h > « « E T '* h F E ? * 5 o 7 .810.2 2 )B E (S llC |it)4kQ (73ffifiiirtlio S / f $

airtronic capacitor

Abstract: trimmer 3-30 pf 3 pin TRIMMER capacitor SD1021 TRIMMER 65PF 101oi 230MHZ mica trimmer capacitor D1021 SOT KAR AR
Contextual Info: M MER -LProducts IV IIC rO w _ _ • S G w w » fn I ■ mm 140 Commerce Drive M ontgom eryville, PA 18936-1013 Teh e n , n o . 5 631 984Q S D 1 0 2 I P ro g re s a P o w e re d b y T ech no log y RF & MICROWAVE TRANSISTORS 130.,230MHz FM MOBILE APPLICATIONS

2SD987

Abstract: 2sd987a 25880 2sb807
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

CO 824

Contextual Info: Infineon t«ch riduci i«t CMY 210-173 MHz to 824 - 849 MHz Up-Converter Application Note No. 035 The CMY 210 is a ultralinear mixer with integrated LO-buffer for frequencies up to and exceeding 2.5 GHz. A low LO-input power of typically 0 dBm is sufficient to provide a

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

2SB1008

Abstract: 333T 7333-1
Contextual Info: ROHM CO LTD 40E m d v a a a 'm d q o s s is / T ra n s is to rs i ebrhm 2SB1008 - 7 - 3 3 -3 1 PNP h> 2 Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor • W f M Ü H / ' D i n i e n s i o n s U n it : m m

SS502

Abstract: M502 Q60218-Y34 Q60218-Y58 BSY34 Scans-0010549
Contextual Info: NPIM-HF-Transistoren für Schalteranw endungen B S Y 34 B SY 58 B S Y 34 und B S Y 58 sind doppeltdiffundierte epitaktische NPN-Silizium-HF-Transistoren in Planartechnik im Gehäuse 5 C3 DIN 41 873 T O -39 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden.

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

Contextual Info: 2SD2423 Silicon NPN Epitaxial, Darlington HITACHI Application Low frequency power amplifier Features The transistor with a built-in zener diode o f surge absorb. Outline UPAK 2 ,4 1. 2. 3. 4. 1006 Base Collector Emitter Collector Flange (Typ) (Typi ¿ 3

2N3053

Contextual Info: T -3 3 -0 5 P ow er Transistors 2N3053, 2N3053A HARRI S S E M I C O N D SE CT OR File Number 27E D M3D2S71 0 0 1 ^ 5 960 5 «H AS General-Purpose, Medium-Power Silicon N-P-N Planar Transistors TERMINAL DESIGNATIONS For Small-Signal A pplications Features:

OB5013

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSA708 LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO -92 • C om plem ent to KSC 1008 • Col lector-Base Voltage: VCbo= -80V • C ollector D issipation: Pc=8 0 0m W ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic