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    C 828 TRANSISTOR NPN Search Results

    C 828 TRANSISTOR NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    C 828 TRANSISTOR NPN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol


    Original     		MMBT2131T1 MMBT2132T1/T3) AN569) PDF

    828 npn

    Abstract: MPS6523
    Text: ON Semiconductort NPN MPS6521* PNP MPS6523 Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS *ON Semiconductor Preferred Device Rating Symbol Collector–Emitter Voltage


    Original     		MPS6521* MPS6523 MPS6521 MPS6523 828 npn PDF

    NEC NF 932

    Abstract: ZO 103 MA 75 623 2SC5009 2SC5009-T1 TD-2430 power transistor 3055
    Text: DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS in milimeters noise figure, high gain, and high current capability achieve a very wide 1.6± 0.1 0.8± 0.1 dynamic range and excellent linearity. This is achieved by direct nitride


    Original     		2SC5009 2SC5009 NEC NF 932 ZO 103 MA 75 623 2SC5009-T1 TD-2430 power transistor 3055 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		GA08JT17-247 O-247AB GA08JT17 73E-47 50E-27 77E-10 23E-10 50E-3 PDF

    C 828 Transistor

    Abstract: B 828 transistor transistor c 828 transistor 828 d marking code dpak transistor C 828 Transistor NPN LC marking code transistor
    Text: Central CJD44H11 NPN CJD45H11 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD44H11, CJD45H11 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for switching and power


    OCR Scan     		CJD44H11 CJD45H11 CJD44H11, CP219 26-September C 828 Transistor B 828 transistor transistor c 828 transistor 828 d marking code dpak transistor C 828 Transistor NPN LC marking code transistor PDF

    C 828 Transistor

    Abstract: marking code 20A iC 828 Transistor LB1200
    Text: Central CZT5338 Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5338 type is an NPN silicon power transistor manufac­ tured by the epitaxial planar process, epoxy mold­ ed in a surface mount package, designed for


    OCR Scan     		CZT5338 OT-223 CP219 26-September OT-223 C 828 Transistor marking code 20A iC 828 Transistor LB1200 PDF

    C 828 Transistor

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20074 14 watts, 1.477-1.501 GHz Cellular Radio RF Power Transistor Description The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		Emitter-Ba01 C 828 Transistor PDF

    PSA44

    Abstract: PSA-45 B 828 transistor PSA45
    Text: Philips Semiconductors Product specification NPN high-voltage transistors MPSA44; MPSA45 FEATURES PINNING • Low current max. 300 mA PIN • High voltage (max. 400 V). 1 collector 2 base 3 em itter APPLICATIONS DESCRIPTION • Telecom m unication applications.


    OCR Scan     		MPSA44; MPSA45 PSA44 PSA45 PSA45 er750 PSA-45 B 828 transistor PDF

    MG200H1AL2

    Abstract: iC 828 Transistor 828 TRANSISTOR equivalent MG200H1 transistor 828
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200H1AL2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode. . High DC Current Gain : hpE=80 Min. (Ic=200A) . Low Saturation Voltage


    OCR Scan     		MG200H1AL2 MG200H1AL2 iC 828 Transistor 828 TRANSISTOR equivalent MG200H1 transistor 828 PDF

    2SC2121

    Abstract: cannon terminal g25a AC42C
    Text: 2 5 2 / 'J D > N P N = » E « y . - y - J B h > ; ^ SILICON NPN TRIPLE DIFFUSED M ESA TRANSISTOR O » » E E * 4 S’ T o High Voltage Switching Applications •  i Œ T t y?m ; v < S Î n M Œ ^ sÎS^> ; Unit In C! E S = 7 5 0 V v CE sat = 5v (Max.) at Iq= 4A , Ijj=1A


    OCR Scan     		2sc2121 2SC2121 cannon terminal g25a AC42C PDF

    K83 Package

    Abstract: MPQ1050 transistor k84 MHQ2221 MPQ2221 MPQ2222 MPQ105
    Text: MPQ1050 SILICON QUAD DUAL-IN-LINE NPN SILICON QUAD DUAL-IN-LINE NPN SILICON HIGH-CURRENT SWITCHING TRANSISTOR HIGH-CURRENT SWITCHING TRANSISTOR . . . designed for high-current, high-speed switching applications. • Low Colflector-Emitter Saturation Voltage —


    OCR Scan     		MPQ1050 O-116 30Vdc 500mAdc, 50mAdc) MPQ2221 MPQ2222 MHQ2221 K83 Package MPQ1050 transistor k84 MPQ2221 MPQ105 PDF

    Siren Sound Generator circuit diagram

    Abstract: internal circuit of UM3561 siren police diagram UM3561A circuit diagram of police siren UM3561 3 machine gun sound generator police siren block diagram Siren Sound Generator 5 police Siren Sound
    Text: UM3561A Three Siren Sound Generator Features A magnetic speaker can be driven by connecting an NPN transistor Power on reset • Four sounds can be selected ■ Typical 3V operating voltage * RC oscillator with an external resistor General Description The UM3561A is a low-cost, low-power CMOS LSI designed


    OCR Scan     		UM3561A UM3561A 200Ko 240Kn 2SC9013or8050 2SC9013or8050 1780u UM3561 Siren Sound Generator circuit diagram internal circuit of UM3561 siren police diagram circuit diagram of police siren 3 machine gun sound generator police siren block diagram Siren Sound Generator 5 police Siren Sound PDF

    TRANSISTOR ML6

    Abstract: TRANSISTOR ML5 resistor MR25 philips philips MR25 resistor MR25 plate capacitor BFQ270 Miniature Ceramic Plate Capacitor Philips 2222 344 capacitors resistor 240
    Text: Philip^emiconductor^^ • bb53T31 GG3177E E7T ■ A P X ^Productspeclflcatlon NPN 6 GHz wideband transistor ^ BFQ270 N FEATURES h^Z » AUER PHILIPS/DISCRETE PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures


    OCR Scan     		DD3177E BFQ270 OT172A1 OT172A1. TRANSISTOR ML6 TRANSISTOR ML5 resistor MR25 philips philips MR25 resistor MR25 plate capacitor BFQ270 Miniature Ceramic Plate Capacitor Philips 2222 344 capacitors resistor 240 PDF

    TRANSISTOR ML6

    Abstract: No abstract text available
    Text: bb53T31 0031772 E7T * A P X Philips Semiconductors Product specification NPN 6 GHz wideband transistor ^ BFQ270 N FEATURES AUER PHILIPS/DISCRETE h^Z T> PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures


    OCR Scan     		bb53T31 BFQ270 OT172A1 TRANSISTOR ML6 PDF

    Untitled

    Abstract: No abstract text available
    Text: . N AMER PHILIPS/DISCRETE 86D 01822 D DbE D bt.53131 DOlHObO □ 7" ~ 5 3 BLX93A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		BLX93A tbS3T31 PDF

    BLW84

    Abstract: DB333 GP 809 RF POWER TRANSISTOR NPN vhf transistor L6
    Text: PHILIPS INTERNATIONAL b 5E D m 7 11 0 02 b 0D b333ñ 7 b l IPHIN BLW84 V.H.F. POW ER TRANSISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B and Coperated v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to with­


    OCR Scan     		711002b 00b333Ã BLW84 OT-123. 7Z77529 7Z77531 BLW84 DB333 GP 809 RF POWER TRANSISTOR NPN vhf transistor L6 PDF

    BLW84

    Abstract: transistor tt 2222 C 829 transistor TT 2222 npn TT 2222 SOT123 C 828 Transistor transistor L6
    Text: N AMER PHILIPS/DISCRETE bTE D • bbS3S31 002^441 Sfl3 IAPX BLW84 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaranteed to w ith­


    OCR Scan     		bbS3S31 BLW84 59-j54 OT-123. 7Z77529 7Z77S30 BLW84 transistor tt 2222 C 829 transistor TT 2222 npn TT 2222 SOT123 C 828 Transistor transistor L6 PDF

    smd transistor xg

    Abstract: smd transistor JE transistor bipolar 500ma transistor smd IY
    Text: CS8128 5V Linear Controller/Driver Description The CS8128 contains all the necessary control circuitry to implement a 5V lin­ ear regulator. An external pass device is used to produce superior performance compared to conventional monolithic regulators. The CS8128 with a TIP42


    OCR Scan     		CS8128 CS8128 TIP42 500mA, 350mV 500mA MS-012 smd transistor xg smd transistor JE transistor bipolar 500ma transistor smd IY PDF

    TRANSISTOR 2SC 2581

    Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS


    OCR Scan     		2SC5009 2SC5009 TRANSISTOR 2SC 2581 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733 PDF

    WT160-P480

    Abstract: WT160-P410 WT160 WT160-P420 WT160-P122 WT160-P162 WT160-P152 WT160-N152 WT160N WT160-n 470
    Text: W T I6 0 W T 160 -P/N 172 -P/N 112 -P/N 152 *»-42- r ? ^ 11 1' N T~ h _ ] -13- 5 1 i - & g— _s 10 U - 8. r'il p 4.2 * rp n r ~ m - liT \ t' _^ rx -h ¡8 -C — \ •38- Scannine Range Features: • 3 different optics -*— 23— *


    OCR Scan     		WTI60 WT160-N WT160-P410 WT160-P WT160- WT160-P122 WT160-P480 WT160 WT160-P420 WT160-P162 WT160-P152 WT160-N152 WT160N WT160-n 470 PDF

    ZO 107 MA

    Abstract: 341S
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low


    OCR Scan     		2SC5009 2SC5009 ZO 107 MA 341S PDF

    EZ 707

    Abstract: 2SC3544 EZ 0710 EZ 728
    Text: -NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry


    OCR Scan     		NE944 EZ 707 2SC3544 EZ 0710 EZ 728 PDF

    D0307

    Abstract: marking a007 vqe 24 er 2N5927 marking JTs US ARMY TRANSISTOR CROSS
    Text: □ 00 MIL SPECS • 0000125 0030751 fl ■ MILS MIL -S-19500/440A ER 10 June 1991 SUPERSEDING MIL -S-19500/440(ER) 17 November 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPE 2N5927, JANTX AND JANTXV This specification is approved for use by US Army Laboratory


    OCR Scan     		MIL-S-19500/440A MIL-S-19500/440( 2N5927, MIL-S-19500. 5961-A007) D0307 marking a007 vqe 24 er 2N5927 marking JTs US ARMY TRANSISTOR CROSS PDF

    digital triggering scr

    Abstract: mosfet triggering circuit for inverter modern transistor substitute 12 VOLTS INVERTER CIRCUIT USING MOSFET 1n014 SCR IC CHIP SCR Gate Drive SCR RECTIFIER scr triggering AN-109
    Text: ► ANALOG DEVICES AN-109 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Understanding and Preventing Latch-Up in CMOS DACs by Mark Alexander INTRODUCTION Many designers now use analog and digital CMOS ICs in their de­


    OCR Scan     		AN-109 digital triggering scr mosfet triggering circuit for inverter modern transistor substitute 12 VOLTS INVERTER CIRCUIT USING MOSFET 1n014 SCR IC CHIP SCR Gate Drive SCR RECTIFIER scr triggering AN-109 PDF