C102 M TRANSISTOR Search Results

C102 M TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

C102 M TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
c102 TRANSISTOR Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	PTFA220041M PTFA220041M PG-SON-10 c102 TRANSISTOR LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217	PDF
TRANSISTOR C802 Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104 Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104	PDF
c102 TRANSISTOR Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113 Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113	PDF
TRANSISTOR C802 Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw	PDF
c102 TRANSISTOR Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111 Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	PTFA220041M PTFA220041M c102 TRANSISTOR tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR TL108 tl111	PDF
c102 TRANSISTOR Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113 Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200	Original	PTFA220081M PTFA220081M PG-SON-10 c102 TRANSISTOR c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113	PDF
c103 m TRANSISTOR Abstract: c103 TRANSISTOR equivalent C102 M transistor c103 npn TRANSISTOR C103 c103 transistor c102 TRANSISTOR Contextual Info: -^outran Ä¥Ä L©(i Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING C H IP N U M B E R PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * (FORMERLY 69 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver'' also available)	OCR Scan	203mm) JAN2N3740, JAN2N3741, SDT69601 SDT69613, SDT69501 SDT69513 500mA, C-102 C-103 c103 m TRANSISTOR c103 TRANSISTOR equivalent C102 M transistor c103 npn TRANSISTOR C103 c103 transistor c102 TRANSISTOR	PDF
transistor c735 Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103 Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	PTFA220041M PTFA220041M PG-SON-10 transistor c735 ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103	PDF
c103 TRANSISTOR equivalent Abstract: C102 M transistor Solitron Devices c103 TRANSISTOR c103 npn Contextual Info: 8368602 SOLITRON DEVICES INC 95D 02 89 3 1 fl3hfibUd OaOEÖTB D 0 I rJpwMËeon • MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP N U M BER Devices. Inc. PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * FORMERLY 69 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum	OCR Scan	203mm) C-102 C-103 c103 TRANSISTOR equivalent C102 M transistor Solitron Devices c103 TRANSISTOR c103 npn	PDF
TL272 Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O Contextual Info: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty	Original	PTFB201402FC PTFB201402FC H-37248-4 17ubstances. TL272 tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O	PDF
c103 TRANSISTOR equivalent Abstract: TRANSISTOR c105 c105 TRANSISTOR MK1210 transistor c107 m c103 m TRANSISTOR C102 M transistor c107 TRANSISTOR equivalent c102 TRANSISTOR triac C105 Contextual Info: 1 Introduction Increasingly power supplies used in applications such as home appliance, office automation,communications and industrial area need to operate on the main AC line 100V and 200V as products are manufactured for global markets. Traditionally power supplies have been designed to operate on either 100V	OCR Scan	200VAC 2606C 95-220V 200uA c103 TRANSISTOR equivalent TRANSISTOR c105 c105 TRANSISTOR MK1210 transistor c107 m c103 m TRANSISTOR C102 M transistor c107 TRANSISTOR equivalent c102 TRANSISTOR triac C105	PDF
BY22B Abstract: C 3311 transistor telefunken ta 750 BFX34 BYW32 T3311 BUT93 Scans-0014927 TELEFUNKEN* U 111 B Contextual Info: TELEFUNKEN E L E C T R O N I C 17E D • f l^ O t n b □QO'353‘3 4 . BUT 93 W IUMFfaimm electronic Creàtiy*T«chnoiosa r - 2 3 - i! Silicon NPN Power Transistor Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique	OCR Scan	T-33-11 BY22B C 3311 transistor telefunken ta 750 BFX34 BYW32 T3311 BUT93 Scans-0014927 TELEFUNKEN* U 111 B	PDF
FR10300N0200J Abstract: UT-085 BLF645 2861002402 deltabond 152 UT-085C-15 transistor C103 c103 TRANSISTOR AN10953 C5750X7S2A106M Contextual Info: AN10953 BLF645 10 MHz to 600 MHz 120 W amplifier Rev. 1 — 3 March 2011 Application note Document information Info Content Keywords BLF645, broadband Abstract The BLF645 is a 100 W, 32 V LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications from HF to 1.4 GHz. This	Original	AN10953 BLF645 BLF645, FR10300N0200J UT-085 2861002402 deltabond 152 UT-085C-15 transistor C103 c103 TRANSISTOR AN10953 C5750X7S2A106M	PDF
c102 TRANSISTOR Abstract: TESTING A c114 transistor transistor c114 transistor c102 Hitachi motor driver HA13614FH C116 transistor c10501 transistor c117 Combo Driver Contextual Info: HA13614FH Combo Spindle & VCM Driver ADE-207-246D (Z) Preliminary, 5th Edition Oct. 1, 1998 Description This COMBO driver for HDD application consists of sensorless spindle driver and BTL type VCM driver. “PWM soft switching function” for low power dissipation and less commutation acoustic noise at the same	Original	HA13614FH ADE-207-246D FP-48T c102 TRANSISTOR TESTING A c114 transistor transistor c114 transistor c102 Hitachi motor driver HA13614FH C116 transistor c10501 transistor c117 Combo Driver	PDF

HA13525A Abstract: HA13525 HA13525AFP DAC transistor current booster Contextual Info: HA13525AFP Combo Spindle & VCM Driver The HA13525AFP is combination o f Spindle and V C M D riv e r d e s ig n e d fo r H D D an d h a v e following functions and features. • Pow er monitor • OTSD Functions • • • • • • • • • 1.5 A max/3-phase spindle motor driver	OCR Scan	HA13525AFP HA13525AFP HA13525A HA13525 DAC transistor current booster	PDF
Contextual Info: HA13614FH Combo Spindle & VCM Driver HITACHI ADE-207-246D (Z) Preliminary, 5th Edition Oct. 1, 1998 Description This COMBO driver for HDD application consists of sensorless spindle driver and BTL type VCM driver. “PWM soft switching function” for low power dissipation and less commutation acoustic noise at the same	OCR Scan	HA13614FH ADE-207-246D FP-48T 12VGOOD	PDF
coil gold detector circuit diagram Abstract: saw resonator r2632 B3530 Transmitter with SAW-based Oscillator ANT015 SAW101 T101-T104 Ceramic Capacitors T104 Siemens ofw real fm transmitter circuit diagram Contextual Info: TELEFUNKEN Semiconductors ANT015 UHF Wireless Data Transceiver Issue: 04.95 ANT015 TELEFUNKEN Semiconductors Table of Contents Introduction .1	Original	ANT015 17TR2100: coil gold detector circuit diagram saw resonator r2632 B3530 Transmitter with SAW-based Oscillator ANT015 SAW101 T101-T104 Ceramic Capacitors T104 Siemens ofw real fm transmitter circuit diagram	PDF
TRANSISTOR BC 157 Abstract: TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34 Contextual Info: TELEFUNKEN ELECTRONIC 17E D • f l^ O t n b □QO'353‘3 4 . BUT 93 W IUMFfaimm electronic Creàtiy*T«chnoiosa r - 2 3 - i! Silicon NPN Power Transistor Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique	OCR Scan	T0126 15A3DIN TRANSISTOR BC 157 TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34	PDF
TRANSISTOR ASY 0.25 W Abstract: c103 a ge Contextual Info: PD - 5.066 International I R Rectifier GA200SA60U INSULATED GATE BIPOLAR TRANSISTOR Ultra-Fast Speed IGBT Features • U ltra F a st: O p tim ize d fo r m in im um satu ra tion vo lta g e a n d op e ra tin g fre q u e n cie s up to 4 0 kH z in hard sw itch ing , > 2 0 0 kH z in re so n a n t m ode	OCR Scan	GA200SA60U C-102 C-103 TRANSISTOR ASY 0.25 W c103 a ge	PDF
CQ1265RT Abstract: CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram CQ0765R cq0965rt cq1265 cq0565rt Contextual Info: www.fairchildsemi.com FSCQ-Series FSCQ0565RT / FSCQ0765RT / FSCQ0965RT / FSCQ1265RT FSCQ1465RT / FSCQ1565RT / FSCQ1565RP Green Mode Fairchild Power Switch FPSTM Features • Optimized for Quasi-Resonant Converter (QRC) • Advanced Burst-Mode Operation for under 1W Standby	Original	FSCQ0565RT FSCQ0765RT FSCQ0965RT FSCQ1265RT FSCQ1465RT FSCQ1565RT FSCQ1565RP 230VAC CQ1265RT CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram CQ0765R cq0965rt cq1265 cq0565rt	PDF
transistor c104 M 123 Abstract: c103 a ge Contextual Info: PD - 9.794 bitem ational SqrIR ectifier IRGBC30FD2 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to	OCR Scan	IRGBC30FD2 10kHz) C-107 5545E TQ-220AB C-108 554S2 transistor c104 M 123 c103 a ge	PDF
CQ1265RT Abstract: CQ0765RT circuit diagram cq1565rt cq0965rt CQ0765RT CQ1465RT cq1265rt schematic diagram CQ0765 CQ0765R cq1265 Contextual Info: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a	Original	Q0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP CQ1265RT CQ0765RT circuit diagram cq1565rt cq0965rt CQ0765RT CQ1465RT cq1265rt schematic diagram CQ0765 CQ0765R cq1265	PDF
CQ0765RT circuit diagram Abstract: CQ0765 10uf, 35v electrolytic capacitor cq1265rt schematic diagram cq0765rt VR201 Contextual Info: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a	Original	Q0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP CQ0765RT circuit diagram CQ0765 10uf, 35v electrolytic capacitor cq1265rt schematic diagram cq0765rt VR201	PDF
CQ0765RT Abstract: CQ1265RT CQ1565RT cq0765rt TRANSISTOR CQ0765RT circuit diagram cq1265 cq0565rt CQ1465RT cq0965rt FSCQ0565RTYDTU Contextual Info: FSCQ-Series FSCQ0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP Green Mode Fairchild Power Switch FPS Features Description • Optimized for Quasi-Resonant Converter (QRC) A Quasi-Resonant Converter (QRC) typically shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a	Original	Q0565RT/FSCQ0765RT/FSCQ0965RT/FSCQ1265RT/ FSCQ1465RT/FSCQ1565RT/FSCQ1565RP CQ0765RT CQ1265RT CQ1565RT cq0765rt TRANSISTOR CQ0765RT circuit diagram cq1265 cq0565rt CQ1465RT cq0965rt FSCQ0565RTYDTU	PDF

C102 M TRANSISTOR Search Results

C102 M TRANSISTOR Result Highlights (5)

C102 M TRANSISTOR Datasheets Context Search

c102 TRANSISTOR

TRANSISTOR C802

c102 TRANSISTOR

TRANSISTOR C802

c102 TRANSISTOR

c102 TRANSISTOR

c103 m TRANSISTOR

transistor c735

c103 TRANSISTOR equivalent

TL272

c103 TRANSISTOR equivalent

BY22B

FR10300N0200J

c102 TRANSISTOR

HA13525A

coil gold detector circuit diagram

TRANSISTOR BC 157

TRANSISTOR ASY 0.25 W

CQ1265RT

transistor c104 M 123

CQ1265RT

CQ0765RT circuit diagram

CQ0765RT