C102 VOLTAGE Search Results

C102

Abstract: c102 voltage
Contextual Info: Technical form: C102 Description: Technical characteristics: Cond Number Nominal Section 2 x 0,75 mm² Formation 24 x 0,20 External Dimension mm 2,2 x 4,5 Conductor Resistance Ohm/Km ±5% 32 Operative Temperature (°C) -15°/+70° Max operative Voltage V

C102 M

Abstract: transistor c102 C102 M transistor C102 C102 transistor PDB-C102 c102 symbols
Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Type PDB-C102 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] WINDOW CAP WELDED Ø0.184[4.67] 0.150[3.81] 0.040[1.02] Ø0.155[3.94] 0.060[1.52] WIRE BONDS C L 0.500 [12.70] MIN 45° C L Ø0.210[5.33]

47C202

Contextual Info: TOSHIBA TLCS-47E Series TMP47P202V CMOS 4-Bit Microcontroller For program operation, the programming is achieved by using with EPROM programmer TMM27256AD type and adapter socket. The Function of this device is exactly same as the 47 C102/202. TMP47P202VP

transistor c102

Abstract: C102 M C102 transistor c102 PDB-C102-I
Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Isolated Type PDB-C102-I DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] Ø0.184 [4.67] WINDOW CAP WELDED Ø0.155 [3.94] 0.198 [5.03] 0.125 [3.18] WIRE BONDS 0.500 [12.70] MIN Ø0.100 B.C. PHOTODIODE CHIP

Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Isolated Type PDB-C102-I DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] Ø0.184 [4.67] WINDOW CAP WELDED Ø0.155 [3.94] 0.198 [5.03] 0.125 [3.18] WIRE BONDS 0.500 [12.70] MIN Ø0.100 B.C. PHOTODIODE CHIP

transistor c102

Abstract: C102 transistor C102 c102 symbols c102 datasheet
Contextual Info: PHOTONIC Silicon Photodiode, U.V. Enhanced Photoconductive Type PDU-C102 DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] WINDOW CAP WELDED Ø0.184[4.67] 0.150[3.81] 0.040[1.02] Ø0.155[3.94] 0.060[1.52] WIRE BONDS CL 0.500 [12.70] MIN 45° CL Ø0.210[5.33] PHOTODIODE

atm 194

Contextual Info: V23806-A8-C102 Multimode 1300 nm LED Fast Ethernet/FDDI/ATM 10 dB 155 MBd Transceiver with Isolated Stud Pins Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) (7.42−0.15) .292−.006 Optical Centerline (2) .080

Densei-Lambda PH50S

Abstract: C102 transistor transistor c102 PH50S PH50S110
Contextual Info: DENSEI-LAMBDA PH50S110 SPECIFICATION C102-01-01B MODEL ITEMS PH50S PH50S PH50S PH50S PH50S 110-5 110-12 110-15 110-24 110-28 1 Nominal Output Voltage V 5 12 15 24 28 2 Maximum Output Current A 10 4.2 3.4 2.1 1.8 W 50 50.4 51 50.4 50.4 % 80 82 83 84 84 0.55

Contextual Info: SIEMENS V23806-A8-C102 Multimode 1300 nm LED Fast Ethernet/FDDI/ATM 10 dB 155 MBd Transceiver w ith Isolated Stud Pins Dimensions in mm inches V ie w Z (Lead cro ss section and s ta n d o ff size) (11.5 max) .453 max. (7.42-0.15) .2 9 2 -0 0 6 O p tic a !_

DC340V

Abstract: korin
Contextual Info: EPM2405SJ •Input-output condition Item Specification Input voltage range DC110～450V Rated input voltage DC140V, DC340V Rated output voltage 24V Rated load current 0.5A ■Electrical specification Ta=25℃ Item Specification Conditions・Note

Contextual Info: EPM0310SJ •Input-output condition Item Specification Input voltage range DC110～450V Rated input voltage DC140V, DC340V Rated output voltage 3.3V Rated load current 1A ■Electrical specification Ta=25℃ Item Specification Conditions・Note

LF-4Z-E393

Contextual Info: EPM1210SJ •Input-output condition Item Specification Input voltage range DC110～450V Rated input voltage DC140V, DC340V Rated output voltage 12V Rated load current 1A ■Electrical specification Ta=25℃ Item Specification Conditions・Note Efficiency

korin pj5h

Abstract: LF-4Z-E363H
Contextual Info: EPM1510SJ •Input-output condition Item Specification Input voltage range DC110～450V Rated input voltage DC140V, DC340V Rated output voltage 15V Rated load current 1A ■Electrical specification Ta=25℃ Item Specification Conditions・Note Efficiency

Contextual Info: EPM0510SJ •Input-output condition Item Specification Input voltage range DC110～450V Rated input voltage DC140V, DC340V Rated output voltage 5V Rated load current 1A ■Electrical specification Ta=25℃ Item Specification Conditions・Note Efficiency

sff-8431

Abstract: Transceivers
Contextual Info: TRANSCEIVERS Product Specification Multirate up to 8.5GBd Limiting Transceivers TRX08GDP0410 General Description and Applications MergeOptics SFP+ LW is a multipurpose multi-rate optical transceiver module for transmission at 1310nm over single mode fiber. Supporting Fibre Channel standards make it ideally suited for storage area network applications. Its sub watt

c102 TRANSISTOR

Abstract: c103 TRANSISTOR transistor c102 transistor C103 c103 TRANSISTOR DATA c102, transistor IPC-2221A Cambridge capacitor capacitors c103 TRANSISTOR equivalent C102 to92
Contextual Info: PCB Layout Guidelines Application Note AN-3185 INTRODUCTION GOOD & BAD DESIGN PRACTICES This application note presents guidelines for creating successful PCB layouts for SMPS applications using CamSemi controller ICs. It is relevant to both RDFC Resonant Discontinuous Forward Converter and

LM5020

Abstract: R107 diode transistor c111 CRCW08054991FRT6 C105 Diode transistor C101 transistor c102 C107 C108 C103 c104
Contextual Info: 1.0 Design Specifications Inputs Outputs #1 VinMin=-48 Vout1=13.5 VinMax=-48 Iout1=1.5 2.0 Design Description The LM5020 is employed here to design a Buck-Boost type power supply where the absolute value of the negative input voltage rail can be above or below the positive output voltage

motorola D101

Abstract: c2073 N101A motorola c105 WSL-2512-R012-F R012F ERIE CAPACITORS ERIE ceramic MAX767CAP transistor c102
Contextual Info: 19-0224;Rev.3;7/00 MAX767 Evaluation Kit _Features The MAX767 evaluation kit EV kit is a fully assembled and tested printed circuit board for Maxim's synchronous, step-down power-supply controller. Providing a tightly regulated 3.3V output voltage from a 5V input

C102

Abstract: diode c102 tr c102 C-102-B C-102-A
Contextual Info: C-102 Series CLAROSTAT High CTR Optically Coupled Isolators SBBORS a comas cnoup Absolute Maximum Ratings TA = 25°C unless otherwise stated. Feature« 10KV I/O isolation very high current-transter-ratio (CTR) hermetically-sealed components UL listed replaces CLA65 family of isolators

VR201

Abstract: 10-14VDC PFE1000F pfe1000f-48 PFE1000 SW201 YC-251 VR202 PFE1000F-28 JEITA-9131B
Contextual Info: PFE1000F Series Evaluation Board PFE1000F/EB Evaluation Board Instruction Manual and Electrical Characteristics _CAUTION ・Dangerous voltage 390V and high temperatures are present with the PFE Evaluation Board (unit) (unit). ・Avoid touching the unit during operation to avoid electric shock and possibility of being burned.

Contextual Info: . 40E D 34=n?3fl 000124fl 4 S E N I FASCO INDS/ SENISYS ' •' • • —HJ uv V i.'J.-W -v,'- • ■■ . irj-iW.hVM't.i -4 1 -8 5 Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • • Storage and Operating Temperature. -55°G to +1 0 0*0

C102 M

Abstract: c102 diode c102 CLA65 c 102 C-102-A C-102-B CLA65AA clairex C102B
Contextual Info: 40E D 34=n?3fl aG0124fl 4 S E N I FASCO INDS/ SENISYS Features Absolute M axim um Ratings Ta = 25°C unless otherwise stated. • • • • • Storage and Operating to + 100*0

motorola D101

Abstract: R012F n101a sanyo WG capacitors motorola d102 2C201 sanyo capacitor wg sanyo capacitor WF ERIE ceramic capacitor C101 Transistor
Contextual Info: MAX767 Evaluation Kit _Features ♦ Fixed 3.3V Output Voltage ±4% ♦ Up to 1.5A and 5A Output Currents ♦ 120µA Standby Supply Current ♦ 700µA Quiescent Supply Current ♦ 300kHz Switching Frequency ♦ More than 90% Efficiency

C102 transistor

Abstract: C103 transistor transistor c102 transistor C103 A80-A350X C102 C103 EPCOS 350 04
Contextual Info: Surge Arrester 2-Electrode-Arrester A80-A350X Ordering code: B88069X2230xxxx a DC spark-over voltage 1) 2) 350 ± 20 V % < 700 < 650 V V < 900 < 800 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 20