C103 FET Search Results

Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power ampliier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,

capacitor marking c106

Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

SMD r801

Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,

TL113

Abstract: tl201 TL217 w3 smd transistor transistor c111
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200

c102 TRANSISTOR

Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

TL225

Abstract: ATC100A6R2CW150X
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

TRANSISTOR C802

Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

c102 TRANSISTOR

Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency

c102 TRANSISTOR

Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

C801

Abstract: 1/db3 c801
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS

c102 TRANSISTOR

Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency

TRANSISTOR C802

Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

TL205

Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's

Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular ampliier applications in the 2300 to 2700 MHz frequency band. Manufactured with Inineon's

Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's

Contextual Info: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET specifically designed for use in Doherty cellular power amplifier applications in the 1805

TL107 linear

Abstract: TRANSISTOR tl131
Contextual Info: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805

TRANSISTOR tl131

Abstract: C805 capacitor C207 capacitor ATC200B103MW LM78L05ACM-ND TL131 LM78L05ACMND TL228 capacitor 471 c103 TRANSISTOR
Contextual Info: PTFA091203EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.

tl136

Abstract: TRANSISTOR tl131 LM78L05ACM-ND LM78L05ACMND TL127 3882 PTFA091203EL
Contextual Info: PTFA091203EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.

Contextual Info: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.

LM78L05ACM-ND

Abstract: LM78L05ACMND C210 TL122
Contextual Info: PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band. This device features internal I/O matching and thermally-enhanced

Contextual Info: PTFB210801FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multistandard cellular power ampliier applications in the 2110 to 2170 MHz

TRANSISTOR tl131

Abstract: TL235 TL231 TL137 tl117 TL130 tl134 Tl232 C804 tl127
Contextual Info: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.

PCC104bct-nd

Contextual Info: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.