C1812C103J1GACTU Search Results
C1812C103J1GACTU Price and Stock
KEMET Corporation C1812C103J1GACTUCAP CER 10000PF 100V C0GNP0 1812 |
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C1812C103J1GACTU | Cut Tape | 8,394 | 1 |
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C1812C103J1GACTU | Reel | 13 Weeks | 1,000 |
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C1812C103J1GACTU | 464 |
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C1812C103J1GACTU | Cut Tape | 1 | 1 |
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C1812C103J1GACTU | 680 |
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KEMET Corporation C1812C103J1GAC7800Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 0.01uF C0G 1812 5% |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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C1812C103J1GAC7800 | Reel | 13,000 | 1,000 |
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C1812C103J1GACTU Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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C1812C103J1GACTU |
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Ceramic Capacitors, Capacitors, CAP CER 10000PF 100V 5% NP0 1812 | Original | |||
C1812C103J1GACTU |
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CAP 0.01UF 100V 5% NP0(C0G) SMD-1812 TR-7-PL SN-NIBAR | Original |
C1812C103J1GACTU Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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C1812C103J1GAC7800Contextual Info: KEMET Part Number: C1812C103J1GACTU C1812C103J1GAC7800 Capacitor, ceramic, 0.01 uF, +/-5% Tol, 100V, C0G, 1812 General Information Manufacturer: KEMET Electrical Specifications Capacitance: 1812 Voltage: 100V Temperature Coefficient: C0G Tolerance: Application: |
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C1812C103J1GACTU C1812C103J1GAC7800) d80a2208-f98b-4ea9-9285-2ae77334accb C1812C103J1GAC7800 | |
Contextual Info: C1812C103J1GACTU aka C1812C103J1GAC7800 Capacitor, ceramic, 0.01 uF, +/-5% Tol, 100V, C0G, 1812 Dimensions mm Specifications ID Dimension Tolerance L W T B 4.50 3.20 1.4 0.60 +/-0.30 +/-0.30 +/-0.15 +/-0.35 2006-2012 IntelliData.net Manufacturer: Capacitance: |
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C1812C103J1GACTU C1812C103J1GAC7800 | |
Contextual Info: GA03JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID @ Tc=150°C hFE Tc=25°C Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area |
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GA03JT12-247 O-247AB GA03JT12 01E-49 00E-27 37E-10 97E-10 00E-3 | |
Contextual Info: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID @ Tc=150°C hFE Tc=25°C Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area |
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GA06JT12-247 O-247AB GA06JT12 08E-47 26E-28 73E-10 86E-10 90E-2 | |
HCPL-322JContextual Info: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity |
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GA08JT17-247 O-247AB GA08JT17 73E-47 50E-27 77E-10 23E-10 50E-3 HCPL-322J | |
Contextual Info: Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation GA15IDDJT22-FR4 VISO,min PDrive, cont PDrive,switch fMAX Features Package • RoHS Compliant Requires single 12 V voltage supply Two-voltage level topology with low drive losses |
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GA15IDDJT22-FR4 GA50JT12-247 GA50SICP12-227 GA100SICP12-227 |