C1G NEC Search Results

Ferraz Shawmut fuse nh

Contextual Info: Special Purpose Fuses Special Purpose Fuses European Fuses Rotating Fuses C1G Range Ferraz Shawmut rotating fuses are specially designed for with standing very high mechanical accelerations, up to 6000g. They are perfectly suited to protecting rectifying diodes used in rotating excitors of power producing

hall effect 66a

Abstract: 66a hall sensor planar transformer theory transmission line transformers 2C12 RG405 ATN-4112A FCI Airmax VSe FREQUENCY DOMAIN REFLECTOMETER HP8720ES
Contextual Info: DesignCon 2006 Theory and Measurement of Unbalanced Differential-Mode Transmission Lines Stephen B. Smith, FCI USA, Inc. stephen.smith@fciconnect.com Sedig S. Agili, Penn State University. ssa10@psu.edu Vittal Balasubramanian, FCI USA, Inc. vittal.balasubramanian@fciconnect.com

C1H mmic

Abstract: UPC2711TB UPC2712TB-E3 mmic e3 UPC2711TB-E3 UPC2712TB c1g nec marking C1H mmic
Contextual Info: PRELIMINARY DATA SHEET 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES UPC2711TB UPC2712TB TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V

marking c1g

Abstract: marking c1h UPC2712TB pt 7313
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2711TB, UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER TYPICAL PERFORMANCE CURVES FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V

am tuners

Abstract: Sat Tuner Application Note marking c1g 865 marking power amplifier diode gp 421 marking 865 marking 865 mmic transistor 936 UPC2711 UPC2711TB
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2711TB, UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER TYPICAL PERFORMANCE CURVES FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V

pt 7313

Abstract: diode gp 421 UPC2711TB UPC2711TB-E3 UPC2712TB UPC2712TB-E3
Contextual Info: UPC2711TB UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V UPC2712TB • WIDEBAND RESPONSE:

marking code C1H

Abstract: k1g marking C1G Transistor MARKING
Contextual Info: MMBTA05 / MMBTA06 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBTA55 / MMBTA56 Ideal for Low Power Amplification and Switching

Contextual Info: ,r« 8 1993 NEC 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2708T UPC2711T FEATURES_ • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • 5 V SINGLE SUPPLY VOLTAGE • SUPER SM ALL PACKAGE

laser diode spice model simulation

Abstract: Gigabit Logic
Contextual Info: TEKTRONIX INC/ TRI 2UINT 2bE 1 Bl ÖTObHlfl DDÜGSQ7 7 HITRÛ ' T - q ’i - l S [(È lB ÏL J G ig a B it L o g ic 16G020 Programmable Single Gate GaAs D-MESFET Array FEATURES • 11 single gate depletion MESFETs on each chip • f t = 22 GHz typical frequency response

Contextual Info: NEC 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES g a in vs. UPC2708T UPC2711T frequency • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE

74HC1G04

Abstract: 74HCT1G04 74HC1G125 74HC1G125GW 74HCT1G125 74HCT1G125GW
Contextual Info: Philips Semiconductors Product specification Bus buffer/line driver; 3-state 74HC1G125; 74HCT1G125 FEATURES QUICK REFERENCE DATA • Wide operating voltage: 2.0 to 6.0 V GND = 0 V; Tamb = 25 °C; tr = tf < 6.0 ns. TYP. SYMBOL • Symmetrical output impedance

Contextual Info: TEKTRONIX INC/ TRI ÛUINT 2bE D B Ô^GbSlû G O D D S n 3 O T R Ö [ È S S I] G ig a B it L o g ic 16G021 Programmable Dual Gate GaAs D-MESFET Array FEATURES • • • • • • >Available with personalized interconnects in the package for design integration and improved

uPC2712

Abstract: PC2713T Package Marking C2s
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

nec d822

Abstract: D1289 NEC D1481 NEC D382 D1046 D1384 D1409 D1549 D1197 D552
Contextual Info: DATA SHEET SHEET DATA BIPOLAR ANALOG INTEGRATED CIRCUITS PPC2711TB, PPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR DBS TUNERS DESCRIPTION The PPC2711TB and PPC2712TB are silicon monolithic integrated circuits designed as buffer amplifier for DBS

Contextual Info: TEKTRONIX INC/ TRI rSUINT 2LE D El aiObSJa OOOOSOS a « T R Ú T 4 'j 3.11 G ig a B it L o g ic 1 -T A 16G011 Programmable GaAs Schottky Diode Arrays FEATURES • 14 Schottky barrier diodes and one full wave rectifier on each chip • 15 mA 16G010 and 100 mA (16G011) versions

uPC2712

Abstract: PC2713T marking c1g GE 7313 upc2711tb UPC2712TB
Contextual Info: DATA SHEET SHEET DATA BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2711TB, µPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC2711TB and µPC2712TB are silicon monolithic integrated circuits designed as buffer amplifier for DBS tuners. These ICs are packaged in super minimold package which is smaller than conventional minimold.

PC2713T

Abstract: 9480 WS60 P11976J
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿iPC3210TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ^¡PC3210TB is a silicon monolithic integrated circuits designed as w ideband amplifier. The ^¡PC3210TB is suitable to system s required w ideband operation from HF to L band.

Contextual Info: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2708T UPC2711T FEATURES • W IDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) m T> • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE

Contextual Info: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2708T UPC2711T FEATURES • W ID E FREQ UENC Y R ESPO NSE: 3 GHz • HIG H G AIN: 15 dB UPC 2708T • SA TUR ATED O U TPU T PO W ER: +10 dBm (UPC2708T) • INTERNAL CU R R EN T REG ULATIO N M INIM IZES GAIN CH ANG E O VER T EM PER A TU R E

Contextual Info: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT juPC3210TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ¿¿PC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The /iPC3210TB is

DB815

Abstract: UPC2708 UPC2708T UPC2708T-E3 UPC2711 UPC2711T UPC2711T-E3
Contextual Info: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES UPC2708T UPC2711T GAIN vs. FREQUENCY 20 • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T UPC2708 15 Gain, GS (dB) • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN

C3H marking

Abstract: uPC3215TB-E3 UPC2712T marking C3h c3h nec VP15-00-3 marking c1h F MARKING 6PIN
Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3215TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3215TB is a silicon monolithic IC designed as wideband amplifier. The µPC3215TB is suitable to systems required wideband operation from HF to L band.