C1J MARKING Search Results

HIGH SPEED SWITCHING NPN SOT23

Abstract: c1j marking CMPT2369 marking c1j
Contextual Info: Central TM Semiconductor Corp. CMPT2369 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal

Contextual Info: CMPT2369 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose

marking c1j

Abstract: CMPT2369 marking code R5 sot23 HIGH SPEED SWITCHING NPN SOT23
Contextual Info: CMPT2369 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose

MARKING c1y

Abstract: MARKING C2K marking C2H marking c1h marking C1s marking c1e c2a marking marking C1P UPG152TA C1H MARKING
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. +0.2 2.8 -0.3 T06 +0.2 1.5 -0.1 3 0.95 4 1.9±0.2 2 0.95 5 1 6 2.9±0.2 +0.2 1.1 -0.1 MARKING -0.05 0.3 +0.10 0.13±0.1 0.8 0 to 0.1 PART

transistor marking LG

Contextual Info: Central Sem iconductor Corp. CMPT2369 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal

sot-23 marking 822

Contextual Info: Centrar Semiconductor Corp. CMPT2369 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and high speed switching appli­

350-JN1-2C

Abstract: CT150-2-JN1-E CT150-2-JN1-B T700253
Contextual Info: 8 Z E S 0 1 PS ’ ON 9 N IM V ü a # # M B C MAIN KEY ) I m (fi WHITE MARKING AS INDICATED a DATE RE V. v / DON W. H NO. ñ S m DR. DESCRI PTI ON ÜÉ & APPD. CHK. fg APPD . 9.Ma r.2006 059590 REVISED A P P LIC A B LE CONTACTS T.SUZUK I T.OKAMURA A.ONO0AWA

CMPT2369

Contextual Info: Central CMPT2369 TM Semiconductor Corp. DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching

Contextual Info: Central Sem iconductor Corp. CMPT2369 DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL S E M IC O N D U C T O R CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching

t2369

Contextual Info: Central Sem icon du ctor Corp. C M P T2369 DESCRIPTION: NPN SILICON TRANSISTOR The C EN TR AL SEM IC O N D U C TO R CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching

Contextual Info: Central Semiconductor Corp. C M P T 23 69 DESCRIPTION: NPN SILICON TRANSISTOR The C EN TR A L S E M IC O N D U C T O R CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching

MARKING CODE B21

Contextual Info: TM C e n tra 1 CMPT2369 Sem i c o n d u c t o r C o r p . DESCRIPTION: NPN SILICON TRANSISTOR The C ENTRAL S E M IC O N D U C TO R CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

PT2369

Contextual Info: Central Sem iconductor Corp. CM PT2369 DESCRIPTION: NPN SILICON TRANSISTOR The C EN T R A L S E M IC O N D U C T O R CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching

marking C1C

Abstract: c1j marking transistor marking C2s uPC2713 PC2713T PC1676G c1a c1b c1c uPC2713T-E3 50C24
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2713T 5 V, SILICON MMIC VHF-UHF WIDEBAND AMPLIFIER DESCRIPTION The µPC2713T is a silicon monolithic integrated circuit designed as 2nd IF buffer amplifier for DBS tuners. This IC is manufactured using NEC’s 20 GHz fT NESAT

Contextual Info: •K SEC » •xt* ' 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2710T UPC2713T FEATURES_ • FREQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: +13.5 (UPC2710T) • 5 V SINGLE SUPPLY VOLTAGE • SUPER SM ALL PACKAGE

UPC2710T-E3

Abstract: UPC2713T UPC2713T-E3 t06 49 uPC2710 UPC2710T t06 93
Contextual Info: 1.5 GHz SILICON MMIC UPC2710T WIDE-BAND AMPLIFIER UPC2713T GAIN vs. FREQUENCY FEATURES • FREQUENCY RESPONSE: 1.5 GHz • SATURATED OUTPUT POWER: +13.5 UPC2710T • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE • 5 V SINGLE SUPPLY VOLTAGE

PC2713T

Contextual Info: 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC271OT UPC2713T FEATURES_ • FREQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: +13.5 (UPC2710T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE

Contextual Info: 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2710T UPC2713T FEATURES • FR EQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: +13.5(UPC2710T) m TJ • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE Ô . SV SINGLE SUPPLY VOLTAGE

Contextual Info: 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2710T UPC2713T FEATURES_ • FREQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: + 13.5(UPC2710T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE

Contextual Info: 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2710T UPC2713T FEATURES • FREQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: +13.5 (UPC2710T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE • 5 V SINGLE SUPPLY VOLTAGE

SMD MARKING CODE C2U

Abstract: smd code marking C2G
Contextual Info: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW TYPE NO. NEW ! NEW ! DESCRIPTION BVC*0 (VOLTS) BVcto (VOUS) w ao (VOLTS) 1 * 0 « S Ve. (VOUS) MM MM MM MAX 10 15 n FE m MM MAX 20 _ « «»V« (VOUS) le m Va< S *n < H (mA) (VOUS) MAX

BC5578

Abstract: npn smd bc550 smd transistor smd 1FT BC5488 smd marking code BC817 BC546 SMD bc816 SMD MARKING CODE C2U SMD MARKING CODE c1l c1g smd
Contextual Info: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! TYPE NO. DESCRIPTION BVC*0 (VOUS) MM BVcto (VOLTS) MM *¥»0 (VOUS) MM 1*0 <8 Ve, (•*) (VOUS) MAX CMPT 918 CMPT2222A CMPT2369 CMPT2484

Contextual Info: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT juPC3210TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ¿¿PC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The /iPC3210TB is

part MARKING k48

Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E