C2655 CHARACTERISTICS Search Results

C2655 CHARACTERISTICS Datasheets Context Search

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C2655 NPN Transistor Abstract: transistor C2655 c2655 c2655 transistor C2655 characteristics C2655 Y C2655(Y)-T 2sc2655 c2655 equivalent BR C2655 Contextual Info: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW	Original	2SC2655 2SA1020. 15oducts C2655 NPN Transistor transistor C2655 c2655 c2655 transistor C2655 characteristics C2655 Y C2655(Y)-T 2sc2655 c2655 equivalent BR C2655	PDF
C2655 NPN Transistor Abstract: C2655 toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics C2655 Y 06 C2655 TRANSISTOR 2SC2655 Contextual Info: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW	Original	2SC2655 2SA1020. O-92MOD C2655 NPN Transistor C2655 toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics C2655 Y 06 C2655 TRANSISTOR 2SC2655	PDF
C2655 NPN Transistor Abstract: transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor c2655 equivalent C2655 characteristics BR C2655 C2655 Y 06 Contextual Info: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW	Original	2SC2655 2SA1020. C2655 NPN Transistor transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor c2655 equivalent C2655 characteristics BR C2655 C2655 Y 06	PDF
C2655 NPN Transistor Abstract: C2655 transistor C2655 C2655 Y BR C2655 C2655 characteristics C2655 Y 06 c2655 transistor 2SC2655 Silicon NPN Epitaxial Type toshiba marking code transistor 2sc2655 Contextual Info: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW	Original	2SC2655 2SA1020. C2655 NPN Transistor C2655 transistor C2655 C2655 Y BR C2655 C2655 characteristics C2655 Y 06 c2655 transistor 2SC2655 Silicon NPN Epitaxial Type toshiba marking code transistor 2sc2655	PDF
c2655 equivalent Abstract: C2655 C2654 C2655 characteristics C2656 C2659 C2652 C2658 C2651 C2653 Contextual Info: CY7C265 8K x 8 Registered PROM Features Functional Description D D The CY7C265 is a 8192 x 8 registered PROM. It is organized as 8,192 words by 8 bits wide, and has a pipeline output regĆ ister. In addition, the device features a programmable initialize byte that may be	Original	CY7C265 CY7C265 193rd c2655 equivalent C2655 C2654 C2655 characteristics C2656 C2659 C2652 C2658 C2651 C2653	PDF