C28 KEMET Search Results

R22 resistor

Abstract: resistor 100k CMPD914 MAX8544 MAX8544EEP vishay resistor 0603 1 TDK CS
Contextual Info: MAX8544 12V Input to 1.2V/8.5A Output Vin 10.8V to 13.2V VL R22 C13 9 15 ILIM1 R21 19 R19 D4 IN BST FSYNC 6 EN ON R23 SS 4 COMP 5 FB R14 VL R24 R16 R15 C14 N6 C18 C19 C20 Vout=1.2V / 8.5A L2 LX 14 R17 C17 VL VL 13 C28 N8 C15 4X DL 12 PGND 10 R18 C39 8 MODE

Resistor 100K

Abstract: R22 resistor c1819 102k x7r 100 C4532X5R0J107M CMPD914 MAX8544 MAX8544EEP C3225X7R C0603C104M9RAC
Contextual Info: MAX8544 12V Input to 1.8V/7.2A Output Vin 10.8V to 13.2V VL R22 C13 9 ILIM1 R21 19 R19 Sync In 15 D4 IN BST FSYNC 6 EN ON R23 SS 4 COMP 5 FB R14 VL R24 R16 R15 C14 N6 C18 C19 C20 L2 Vout=1.8V / 7.2A LX 14 R17 C17 VL VL 13 C28 N8 C15 4X DL 12 PGND 10 R18

transistor c114

Abstract: c102 TRANSISTOR TRANSISTOR c105 transistor c114 chip c104 TRANSISTOR C114 transistor c107 TRANSISTOR c106 TRANSISTOR TRANSISTOR C107 c101 TRANSISTOR
Contextual Info: Intel740 Graphics Accelerator Reference Card BOM 3/30/98 QTY 5 3 6 48 Component Type Diode Pack Diode Pack Capacitor Capacitor Value N/A N/A 1UF .1UF Manufacturer Motorola Motorola TDK KEMET Part Number BAV99LT1 BAV99LT1 C3216X7R1C105KT000N C0805C104K5RAC

Tantalum Capacitor kemet

Abstract: HSR6 CRCW12061K00FKEA 1030 mhz 3A412 MRF6VP121KHR6 MRF6VP121KHSR6 A114 A115 C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 1, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed

250GX-0300-55-22

Abstract: Arlon AN1955 MRF6VP121KHR6 MRF6VP121KHSR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed

250GX-0300-55-22

Abstract: MCGPR63V477M13X26-RH ATC100B360JT500XT ATC100B1R0CT500X MRF6VP121KH ATC100B1R0CT500XT ATC100B3R6CT500XT ATC100B100JT500X JESD22-A114 MRF6VP121KHR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 2, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1007H Rev. 0, 12/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1007HR5 MMRF1007HSR5 RF power transistors designed for applications operating at frequencies

74HC125

Abstract: 2N3904 C28 BAT54A FDS6670A FDS7760A LTC1929 LTC1929-PG MBRS320T3 T510X477M006AS 16SP27OM
Contextual Info: = !"#$%&' =PolyPhase !J ! 234 Wei Chen !" ! !"# J ! !"#$%&'( *'+,-./01!"#$%&'()*+),-. /012 !"#$%&'()*+!"#$,-./0 = MOSFET !"#$%&'()&*+,!"#$%&'()*+,-./ 0123 !"#$%&'()*+,-./01234 ! LTC1929-PG !"#$ ( power good ) !"#$%&$'()*+,-.+/01$ ! ( ASIC ) !( 40A ) ! ( ≤6V )

5.1 subwoofer printed circuit board

Abstract: 5.1 audio amplifier board rca to 5.1 audio circuit 5.1 subwoofer amp 08055C101JAT2A lisn 651b BLM41P102SGPT LN35 LXE1721
Contextual Info: LXE1721 EVALUATION BOARD USER GUIDE LXE1721 AUDIOMAX EVALUATION KIT USER’S GUIDE LINFINITY DIVISION Copyright  2000 Rev. 0.3, 2001-10-19 Microsemi Linfinity Microelectronics Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

AUDIO MOSFET POWER AMPLIFIER SCHEMATIC

Abstract: LX1722CDB capacitor 1000uF 25V 0805n101j500nt 0805N220J500NT 100 100w stereo amplifier capacitor 100nf 50v 0805 datasheet vishay LX1722 100w audio amplifier schematic stereo audio amplifier 4 w 4 ohm
Contextual Info: AUDIOMAX LX1722MONO EVALUATION KIT USER’S GUIDE LX1722MONO AMPLIFIER EVALUATION KIT USER’S GUIDE TM Copyright 2000 Rev. 0.3, 2002-01-25 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

capacitor 1000uF 25V

Abstract: AUDIO MOSFET POWER AMPLIFIER SCHEMATIC 100 100w stereo amplifier BTL audio 100w 0805N220J500NT OF 1000uF 25V capacitor LX1722CDB capacitor 100nf 50v 0805 NOVACAP 0805n101j500nt T491A105M016AS
Contextual Info: AUDIOMAX LX1722MONO EVALUATION KIT USER’S GUIDE LX1722MONO AMPLIFIER EVALUATION KIT USER’S GUIDE TM Copyright 2000 Rev. 0.2, 2002-01-25 Microsemi Linfinity Microelectronics Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Z25 transistor

Abstract: Z27 transistor
Contextual Info: Document Number: MHT1001H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1001HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.

Contextual Info: Document Number: MD8IC925N Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on−chip matching that makes it usable from 728 to 960 MHz. This multi−stage

LXE1721

Abstract: AVX 0805 50V 4.7uF ECA-1HM470I LX1721CDB Si4558DY 1000uF-25V 651b BLM41P102SGPT ECA 100V 1000uF L100
Contextual Info: LXE1721 标准鉴定板 用户指南 LXE1721 AUDIOMAX 标准鉴定板 用户指南 LINFINITY DIVISION Copyright  2000 Rev. 0.3, 2002-07-18 Microsemi Linfinity Microelectronics Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

TH 2190 Transistor

Abstract: TH 2190 mosfet z24 mosfet
Contextual Info: Freescale Semiconductor Technical Data Rev. 2, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

226 35K

Abstract: 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 6, 4/2012 RF Power Field Effect Transistors MRF6VP41KHR6 MRF6VP41KHSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to

ATC100B5R6CT500XT

Abstract: ATC100B9R1CT500XT ATC100B241JT200XT MRF6VP41KH MRF6VP41KHR6 NIPPON CAPACITORS UT-141C-25 AN1955 MRF6VP41KHSR6 2225X7R225KT3AB
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 5, 4/2010 RF Power Field Effect Transistors MRF6VP41KHR6 MRF6VP41KHSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to

MRF6VP41KH

Abstract: UT-141C-25 NI-1230 Nippon capacitors date code mrf6vp41kh pcb NIPPON CAPACITORS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 6, 4/2012 RF Power Field Effect Transistors MRF6VP41KHR6 MRF6VP41KHSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to

Z-34

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19120 MRF19120S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications at frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.

226 35K capacitor

Abstract: capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k
Contextual Info: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

226 35K capacitor

Abstract: capacitor 226 35K R 226 35k
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier