C2F SOT23 Search Results

c650 diode

Abstract: C2F SOT23 C2F transistor sot23 3304N g5500as TISP4C015L1N PT6102xL 2026-35-C2F 4A12P-1AH-12R5 B1250T
Contextual Info: Bourns Solutions for Telecom Voice, VDSL & Ethernet Applications Short Form Brochure Telcordia GR-1089-CORE SLIC Protection Solution A B1250T Switching Diode 2026-35-C2F SLIC Clamp -VBAT P850-G Feature Characteristics Package type and size TBU DFN: 8.25 x 4 mm

C2f TRANSISTOR

Abstract: C2F SOT23 C2F SOT-23 marking c2f C2F marking SOT23 C2F transistor sot23 transistor c2f CMPT2907A C2F transistor pnp
Contextual Info: CMPT2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general

marking code 359 sot-23

Abstract: C2F SOT23 sot-23 Marking LG C2f TRANSISTOR 359 sot23
Contextual Info: Central semiconductor Corp. CMPT2907A DESCRIPTION: PNP SILICON TRANSISTOR The Central Semiconductor CMPT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal

C2f TRANSISTOR

Abstract: C2F SOT23 c2f sot-23 C2F marking SOT23 transistor c2f Marking C2F C2F transistor pnp c2f sot CMPT2907A 150mA
Contextual Info: Central Semiconductor Corp. CMPT2907A PNP SILICON TRANSISTOR TM DESCRIPTION: The Central Semiconductor CMPT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching

C2F transistor pnp

Contextual Info: Central Semiconductor Corp. CMPT2907A DESCRIPTION: The Central Semiconductor CMPT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal general purpose and switching applications.

K2F TRANSISTOR

Abstract: MMBT2907A-13 C2F marking SOT23
Contextual Info: MMBT2907A 60V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT2222A Ideal for Low Power Amplification and Switching

C2f TRANSISTOR

Abstract: IC TM 164 CMPT2907A C2F SOT23
Contextual Info: Central CMPT2907A TM Semiconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose

Contextual Info: Central CM PT2907A Sem iconductor Corp. PNP SILICON TRAN SISTO R DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and

Contextual Info: Central CMPT2907A Sem iconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and

Contextual Info: Central CMPT2907A Sem iconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose

MA4P7436-1141T

Abstract: AS080447-33N IA2410 AS120252-9R3N PD85006L-E SOT323-5 C1P SOT23 GRM42-6 COG c6p SOT23 PD85035s-e
Contextual Info: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Data brief Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A

ia2410

Contextual Info: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm

AS080447-33N

Abstract: l0422 IA2410 C22A c2f sot AS120252-9R3N IA4910 C2F SOT23 PD85006L-E PD85035S-E
Contextual Info: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm

CMPT2907A

Contextual Info: Central C M P T 2907A sem ico n d u cto r Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SE M IC O N D U C T O R CMPT2907A type is an PNP silicon transistor manufactu red by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose

Contextual Info: SN74LVC1G10 SINGLE 3-INPUT POSITIVE-NAND GATE www.ti.com SCES486D – SEPTEMBER 2003 – REVISED JANUARY 2007 FEATURES • • • • • • • Available in the Texas Instruments NanoFree Package Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V

Contextual Info: SN74LVC1G10 www.ti.com SCES486E – SEPTEMBER 2003 – REVISED DECEMBER 2013 Single 3-Input Positive-NAND Gate Check for Samples: SN74LVC1G10 FEATURES DESCRIPTION • The SN74LVC1G10 performs the Boolean function Y = A • B • C or Y = A + B + C in positive logic.

Contextual Info: SN74LVC1G10 www.ti.com SCES486E – SEPTEMBER 2003 – REVISED DECEMBER 2013 Single 3-Input Positive-NAND Gate Check for Samples: SN74LVC1G10 FEATURES DESCRIPTION • The SN74LVC1G10 performs the Boolean function Y = A • B • C or Y = A + B + C in positive logic.

marking code ff SMD Transistor

Abstract: SMD MARKING CODE C2U SMD MARKING CODE C1G C2U SOT-89 transistor smd 2N4403 c1g smd 2N3904 TRANSISTOR SMD SOT23 transistor 2N2222A RF transistor marking IN SOT-89 2N3640
Contextual Info: CENTRAL SE MI C ON D UC T O R ÜË dI~ § M a n ta 00G0430 3 f r-z 7 -2 ? ~ @§nijg§£3S Cestirai liüiie@ndugf@? gsrp. ♦I Central semiconductor Corp. Ï S tfii s@rusüG mö©g @? @@pp. SURFACE MOUNTED DEVICES TRANS I St OÄ: SOT- 23, SOT-89 145 Adams Avenue

Contextual Info: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm

KIC77

Contextual Info: SEMICONDUCTOR KIC77A/B/C/D/E16~50T/T2/M/M2 TECHNICAL DATA Analog CMOS Integrated Circuits CMOS System Reset IC Built-in Delay time circuit Monolithic IC KIC77A/B/C/D/E*T/T2/M/M2 Series KIC77A/B/C/D*T/T2 This IC is a system reset IC built in delay time circuit.

t2F sot 23

Abstract: marking m2 KIC77
Contextual Info: SEMICONDUCTOR KIC77A/B/C/D/E16~50T/T2/M/M2 TECHNICAL DATA Analog CMOS Integrated Circuits CMOS System Reset IC Built-in Delay time circuit Monolithic IC KIC77A/B/C/D*T/T2/M/M2 Series KIC77A~D*T/M This IC is a system reset IC built in delay time circuit.

C2F SOT23

Contextual Info: SN74LVC1G10 www.ti.com SCES486E – SEPTEMBER 2003 – REVISED DECEMBER 2013 Single 3-Input Positive-NAND Gate Check for Samples: SN74LVC1G10 FEATURES DESCRIPTION • The SN74LVC1G10 performs the Boolean function Y = A • B • C or Y = A + B + C in positive logic.

SMD MARKING CODE C2U

Abstract: smd code marking C2G
Contextual Info: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW TYPE NO. NEW ! NEW ! DESCRIPTION BVC*0 (VOLTS) BVcto (VOUS) w ao (VOLTS) 1 * 0 « S Ve. (VOUS) MM MM MM MAX 10 15 n FE m MM MAX 20 _ « «»V« (VOUS) le m Va< S *n < H (mA) (VOUS) MAX

BC5578

Abstract: npn smd bc550 smd transistor smd 1FT BC5488 smd marking code BC817 BC546 SMD bc816 SMD MARKING CODE C2U SMD MARKING CODE c1l c1g smd
Contextual Info: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! TYPE NO. DESCRIPTION BVC*0 (VOUS) MM BVcto (VOLTS) MM *¥»0 (VOUS) MM 1*0 <8 Ve, (•*) (VOUS) MAX CMPT 918 CMPT2222A CMPT2369 CMPT2484