C4 DIODE Search Results

Contextual Info: 9 =W S age C3 P H Ro oir / See E - C4 E C3 N - C4 N CAPACITANCE NETWORKS - RC NETWORKS Tension nominale / Rated voltage URC V 2 3 2 3 4 1 2 3 4 0,78 0,45 C1 = C2 = C3 = C4 1 C1 1 2 3 C2 4 C3 2 C4 3 4 Sur demande / On request : C1 # C2 # C3 # C4 Consulter notre Service Commercial

15N160

Abstract: 40N160 9N160 40N140
Contextual Info: BIMOSFET TM B-Series Contents 1999 IXYS All rights reserved VDSS IC cont VCE(sat) max TC = 25 °C TC = 25°C TO-247 Page V A V 1400 1600 9 7.0 IXBH 9N140 IXBH 9N160 C4 - 2 C4 - 2 1400 1600 15 7.0 IXBH 15N140 IXBH 15N140 C4 - 4 C4 - 4 1400 1600 20 6.5 IXBH 20N140

30U6P42

Abstract: MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z
Contextual Info: 1. Power MOS-FETs and C4 . Resistors R2 and R 3 are used to balance the C3 and C4 voltages and 20ki2 is used here as the resistance value. C3 and C4 each have a capacitance o f 470juf. 2 Auxiliary power supply for the control cir­ cuit The switching regulator IC TA76524P which

CM1218

Abstract: CM1218-C4SE LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR SMT marking R4C
Contextual Info: CM1218-C4 Low Capacitance Transient Voltage Suppressors / ESD Protectors Features Product Description • • • The CM1218-C4 device features transient voltage suppressor arrays that provide a very high level of protection for sensitive electronic components which

LC32020

Abstract: LC32016 power mosfet module n-channel 500w power mosfet
Contextual Info: MNT - LC32016 - C4 MNT - LC32020 - C4 MECHANICAL DATA Dimensions in mm POWER MOSFET MODULE FOR HIGH POWER AUDIO APPLICATIONS 51.0 57.0 7.0 28.0 10.0 TYP Ø 4.25 2 POSN FEATURES • P - CHANNEL POWER MOSFETS 6.35 TYP • N - CHANNEL POWER MOSFETS • HIGH SPEED SWITCHING

diode F4

Abstract: diode F4 11 12KF4 igbt F4 400 R 12 KF4
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information F4 400 R 12 KF4 61,5 18 130 31,5 26,4 114 A B + + - - C2 C1 C4 G2 G1 G4 E2 E1 5 7 C3 E4 E3 G3 4 tief 3,35 15 5,5 C1 + external connection to be done C3 G1 G3 E1 E3 C2 C4 G2 G4 E2 - +

ccd diode

Abstract: dalsa ia-d2-0512 D0G0332 ccd diode datasheet
Contextual Info: 4ÖE D • EblSTTM ^ PA LSA S fifl C CD Image OOOQSSb bS8 B I D A L S IN C . | L-C3/IL-C4 TURBOSENSOR S e n s o rs IL-C3/IL-C4 Linear Image Sensor Arrays PALSA ''"’P ' ^ I -3 S INC FEATURES_ • 60 MHz Effective Data Rate

IL-C6-2048

Abstract: IL-C2-0512 Dalsa ccd diode DDD0257 IL-C3-0128 IL-C3-0256 IL-C3-0512 IL-C4-1024 IL-C4-2048
Contextual Info: 4ÖE D • EblSTTM ^ PA LSA S fifl C CD Image OOOQSSb bS8 BI D A L S IN C . | L-C3/IL-C4 TURBOSENSOR S e n s o rs IL-C3/IL-C4 Linear Image Sensor Arrays ''"’P ' ^ I -3 S PALSA INC FEATURES_ • 60 MHz Effective Data Rate

FS400

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information F4 400 R 12 KF4 61,5 18 130 31,5 114 A B + + - - C2 C1 C4 G2 G1 G4 E2 E1 26,4 G3 E4 E3 5 7 C3 4 tief 3,35 15 5,5 external connection to be done + + C1 C3 G1 G3 E1 E3 C2 C4 G2 G4 A E2

igbt F4 400 R 12 Kf4

Abstract: diode F4 11
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information F4 400 R 12 KF4 61,5 18 130 31,5 114 A B + + - - C2 C1 C4 G2 G1 G4 E2 E1 26,4 G3 E4 E3 5 7 C3 4 tief 3,35 15 5,5 external connection to be done + C1 C3 G1 G3 E1 E3 C2 C4 G2 G4 E2 + A

Contextual Info: MNT - LC32016 - C4 MNT - LC32020 - C4 MECHANICAL DATA Dimensions in mm POWER MOSFET MODULE FOR HIGH POWER AUDIO APPLICATIONS 5 1 .0 5 7 .0 2 8 .0 1 0 .0 T Y P ø 4 .2 5 2 P O S N FEATURES 7 .0 • P - CHANNEL POWER MOSFETS 6 .3 5 T Y P • N - CHANNEL POWER MOSFETS

APT0502

Abstract: APTGT50TDU170PG
Contextual Info: APTGT50TDU170PG Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 E3 G5 E5/E6 IC ICM VGE PD RBSOA E5 E2 E4 E6 G2 G4 G6 C4 C6 Absolute maximum ratings Symbol VCES

APTGT50TDU60P

Abstract: MJ480
Contextual Info: APTGT50TDU60P Triple Dual Common Source Trench + Field Stop IGBT Power Module G5 E3 E1 E5 E1/E2 E3/E4 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G3 G1 E1/E2 C2 E1 C5 E3/E4 E3 G5 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology

igbt 600V

Abstract: APT0502 APTGT75TDU60PG
Contextual Info: APTGT75TDU60PG Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 E1/E2 C2 C6 C3 C5 G1 G3 E1 E3 E3/E4 G5 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology

APTGT75TDU60P

Contextual Info: APTGT75TDU60P Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 E1/E2 C2 C6 C3 C5 G1 G3 E1 E3 E3/E4 G5 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology

APT0502

Abstract: APTGT100TDU60PG IGBT triple modules 100A
Contextual Info: APTGT100TDU60PG Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology

APTGT100TDU60P

Contextual Info: APTGT100TDU60P Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology

E6 DIODE

Abstract: APTGT50TDU170P DIODE e5
Contextual Info: APTGT50TDU170P Triple Dual Common Source Trench IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA

APT0502

Abstract: APTGT150TDU60PG SP6-P
Contextual Info: APTGT150TDU60PG Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology

APTGF50TDU120P

Contextual Info: APTGF50TDU120P Triple dual Common Source VCES = 1200V IC = 50A @ Tc = 80°C NPT IGBT Power Module G1 G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 IC ICM VGE PD RBSOA E5 E2 E4 E6 G2 G4 G6 C4 C6 Absolute maximum ratings

APTGF50TDU120PG

Abstract: APT0502
Contextual Info: APTGF50TDU120PG Triple dual Common Source VCES = 1200V IC = 50A @ Tc = 80°C NPT IGBT Power Module C5 C3 G1 G3 E1 E3 G5 E5 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Non Punch Through NPT FAST IGBT

APT0502

Abstract: APTGF90TDU60PG
Contextual Info: APTGF90TDU60PG Triple dual Common Source VCES = 600V IC = 90A @ Tc = 80°C NPT IGBT Power Module G1 G3 E1 E3 G5 E5 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Non Punch Through NPT Fast IGBT

smd diode marking 79

Abstract: BB141 marking code 4 SC-79 MARKING C SOD523 smd marking 76 smd diode code 39 marking code b SC-79
Contextual Info: LESHAN RADIO COMPANY, LTD. Low-voltage variable capacitance diode BB 141 FEATURES • Excellent linearity · Ultra small plastic SMD package · C4: 2.38 pF; ratio: 1.76 · Low series resistance. APPLICATIONS · Voltage controlled oscillators VCO . DESCRIPTION

Bb142

Abstract: marking code 4 SC-79
Contextual Info: LESHAN RADIO COMPANY, LTD. Low-voltage variable capacitance diode BB 142 FEATURES • Excellent linearity · Ultra small plastic SMD package · C4: 2.05 pF; ratio: 2.2 · Low series resistance. APPLICATIONS · Voltage controlled oscillators VCO . DESCRIPTION