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    Powerex Power Semiconductors C458PD

    Silicon Controlled Rectifier,1.4Kv V(Drm),2Ka I(T),to-200Var74 Rohs Compliant: Yes |Powerex C458PD
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    C458PD Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C458PD Silicon Power Thyristor, Thyristor, 1400V Forward Blocking Voltage Original PDF
    C458PD Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    C458PD Powerex Inverter Grade SCRs / Asymmetric SCRs Scan PDF
    C458PD Richardson Electronics Inverter Silicon Controlled Rectifier Scan PDF
    C458PD1 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    C458PD2 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF

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    C458

    Abstract: C458 C
    Text: TiEU ^£,mL-C-.ona.uatoi , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 INVERTER THYRISTOR C458 53nm / 1400V / 2000Arrns / 35us Type C458 reverse blocking thyristor is suitable for inverter applications. The silicon junction is


    Original
    PDF 2000Arrns C458PD C458PB C458P 00V/US C458 C458 C

    C458

    Abstract: transistor C458 C458 C C458 datasheet C458PD B C458 c458 transistor disc thyristor c458 transistors c458 C458P
    Text: INVERTER THYRISTO R C458 53mm / 1400V / 2000Arms / 35us Type C458 reverse blocking thyristor is suitable for inverter applications. The silicon junction is manufactured by the all-diffused process and utilizes the field-proven, interdigitated amplifying gate


    Original
    PDF 2000Arms C458PD 125oC C458PB C458P -40oC C458 transistor C458 C458 C C458 datasheet C458PD B C458 c458 transistor disc thyristor c458 transistors c458 C458P

    transistor C458

    Abstract: C458 datasheet c458 transistor C458 C458 equivalent B C458 C458PD C458PB disc thyristor c458 THYRISTOR di/dt 100A/uS
    Text: INVERTER THYRISTOR C458 53mm / 1400V / 2000Arms / 35us Type C458 reverse blocking thyristor is suitable for inverter applications. The silicon junction is manufactured by the all-diffused process and utilizes the field-proven, interdigitated amplifying gate


    Original
    PDF 2000Arms C458PD 125oC C458PB C458P -40oC transistor C458 C458 datasheet c458 transistor C458 C458 equivalent B C458 C458PD C458PB disc thyristor c458 THYRISTOR di/dt 100A/uS

    C458

    Abstract: C457E C458E C434A C458 C C438 C434 C437 C458N C435
    Text: RI C H A R D S O N / NATIONAL TYPE NO. VOLTAGE RANGE INVERTER SCRs N A T I O N A L EL b5E D • ? 7 3 LH 1 7 OOOObT? b3T ■ NAT C434 C435 C436 C437 C438 C447 C448 C457 C458 100-700 500-1200 500-1200 500-1200 500-1400 500-1400 Peak on-state sinusoidal current


    OCR Scan
    PDF 500ERSE C434S C435S C436S C437S C438S C447S C448S C457S C458S C458 C457E C458E C434A C458 C C438 C434 C437 C458N C435

    C458

    Abstract: 0805 SMD resistors derating C458S silicon blood pressure sensor 7277 C434 C448 C448T C434A C435 C435A
    Text: INVERTER SCRs NATIONAL TYPE NO. VOLTAGE RANGE C434 C435 C436 C437 C438 C447 C448 C457 C458 100-700 500-1200 500-1200 500-1200 500-1400 500-1400 Peak on-state sinusoidal current @ Tc =65°C, 50% duty A I tm _ _ _ _ _ @ 1 KHz 1700 650 950 1800 3000 3300 @ 5 KHz


    OCR Scan
    PDF C434S C435S C436S C437S C438S C447S C448S C457S C458S C435N C458 0805 SMD resistors derating C458S silicon blood pressure sensor 7277 C434 C448 C448T C434A C435 C435A