C60S Search Results

TL497

Abstract: w01a TL491 TL497ACJ 251C TL497A TL497AC TL497AI TL497AM TL197
Contextual Info: - 397 - TL497A X' f • uJfjL T 1 .2 V Ï? * ^ v ^ > if • -y ^ ^ if • u - ^ > , -< W < — 7=- -f if y - r * -— n m m ft-e , X T ? y T 5/ 7*, X f 7 7 1 ' '7 f • Is à? jrr !✓ U - * Z>. 7*4 V ^ > if • h 7 >i?7s ? , * - r Vm : 15V VIN 5 V ^ ;

C60N

Abstract: GE C150e GE C150 ge c46b C145T GE C150M C45U scr c52u C60M C150 SCR
Contextual Info: PHASE CONTROL S C R ’s HIGH CURRENT 55 TO 200 AM PERES C45, 46 GE T Y P E C145 C50, Ü2 C150, 152 2N1909-1 G 2N1792-98 JEDEC C60, 62 C350 C178 2N2023-30 ELEC TR IC AL SPECIFICATIONS 25*600 VOLTAGE RANGE 500-1200 25-800 500-1300 25-600 500-1300 500-1300 110

TC227

Abstract: IR sensor LFN 2N700Z S14800 U53D LS 2027 audio amp a-b osai em 231 rtd aa2c SOT23-5 LM2729
Contextual Info: Model: R15B R:0 Intel Banias+855PM+ICH4 PCB STACK UP LAY1 TOP LAY2 GND LAY3 IN1 LAY4 IN2 LAYS GND1 LAY6 VCC LAY7 IN3 LAY8 IN4 LAY9 GND2 LAY10 BOTTOM Revision History A Page Page Page Page Page Page Page Page Page Page Page ORIGINAL RELEASE 1 2 3 4 5 6 7 8

IC NE556

Abstract: NE556 NE556-1 se556 NE5561 SA556 SA556-1 SE556-1 SE556-1C RC556
Contextual Info: 216- SA/SE/NE556, SA/SE/NE556-1,SE556-1C s > < f • ✓ • « A 'x a j s i w u u e if e f l ji L x j a a t h iiiiT V '4 . m z Sig netics .i c ^ , 5 5 5 at 2 0 i A 5 e !}§ Vcc : 18V SE556, SE556-1 i G N D I i # a t c f i f flT - , T ’l '— 9 l6V (_hsE U n»,SÄ 1*)

Contextual Info: 1 J tL DO NOT SC AL E 2 x DIMENSIONS I N MM. 4.80 C 3 4 4 2 7 3 5. C.A.D. FILE CODE IL LU C£ CONTROL DIM. B SCRAP 2 1 WHITE 2 G&£Y MITRILE RUBBER 7 BLUE NYLON 66 2 Gaey NI TRI LE RUBBER 1 RED NYLON 66 2 NI TRILE RUBBER NYLON 66 NI TRILE RUBBER 7 BLAC K NYLON 66

NE556

Abstract: AAFI NE556-1 se556 NE5561 SA556 SA556-1 SE556-1 SE556-1C IC NE556
Contextual Info: 216- SA/SE/NE556, S A /S E /N E 556-1, SE556-1C S ignetics s > < f • ✓ • « A 'x a j s i w u u e if e f l ji L x j a a t h m z . i c ^ , 5 5 5 at 2 0 iiiiT V '4 . G N D I i # a t c f i f flT T ’l '— 9 , i A 5 e !}§ Vcc : 18V SE556, SE556-1 i

Contextual Info: EDI444097Ç-RP W 4Megx4Fast Page DRAM Ruggedized Plastic D I ELECTRONIC. DESIGNS, INC 4 Megabitx 4 Dynamic RAM 5V, Fast Pays Features EDI's ruggedzed plastic 4Mx4 DRAM allows the user to capitalize on the cost advantage of using a plastic compo- 4 Meg x 4 bit CMOS Dynamic

FS DMO 365 RN

Abstract: mxj A1 connector LS 2027 audio amp MA81C WDA42 lx4 d09 st3pc 13T4 0601N D1661
Contextual Info: Model : F17P R:1 Intel Pentium 4 LGA775 +PT880+VIA8235 C E PCB STACK UP LAY1 LAY 2 LAY 3 LAY 4 LAY 5 LAY 6 LAY 7 LAY 8 LAY 9 LAY10 TOP GND INI IN2 GND1 VCC IN3 IN4 GND2 BOTTOM Revision History A O R IG IN A L RE LEA SE fe . cCL V?, o . ^ •Pff' j L

H501C

Abstract: TL497AC TL491 251C TL497A TL497AI TL497AM
Contextual Info: - 397 T L 497A X 'f • u J fjL 1.2V y - r * -— n m m f t - e , X T ? y T 5/ 7*, X f 7 7 1 ' '7 f • Is à? jrr !✓U - * Z>. Ï? * ^ if 7 * 4 V ^ > if • h 7 > i ? 7 s ? , 500mA Tab -5. * - r T v ^ > if • -y ^ ^ if • u -^ > , -< W < — 7=- -f * if

STK7348

Abstract: EQB01-150 D526 UZ-12BSB IC601 d526 y Q609 UZ39BSB L5631 BL02RN2-R62
Contextual Info: 1 78M06 3 + 1+ IC6 C161 1000 16 D42 RE1 y w v Q30 2SC1815 GR 2SC3331(TU) 1 L19 PS1 AC1 L23 F1 250V4A < r\jo -C178 0.1 250V BJIOK nMTAHMfl TEJ1EBH30PA FUNAI n R130 3.9 TW T801 ZTS2325 POWER TRANS 8C602 BC601 5MM JUMPER 5MM JUMPER c n — c u -

do9-15

Abstract: TOT - 4301 do9-1 4880M D08-15 CH371 HY51V4264B
Contextual Info: HYUNDAI HY51V4264B Series 256Kx 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY51V4264B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design technique to achieve fast