C7 MARKING FAIRCHILD Search Results

C7 MARKING Fairchild

Contextual Info: FCP380N60E / FCPF380N60E N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior

Contextual Info: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

2511NZ

Abstract: FDW2511NZ dual mosfet tt 6 pin Diode N7 S2 2511N 6 pin diode n10
Contextual Info: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

n mosfet pspice parameters

Abstract: FDW2512NZ 2512nz
Contextual Info: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

5e8 marking

Abstract: 66E-3
Contextual Info: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

Contextual Info: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

2601NZ

Abstract: FDW2601NZ 2601N
Contextual Info: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

n20 n21 fet

Abstract: 53E1 FDG6318PZ SC-70-6 SC70-6 dual transistors sc-70-6 N2 SC70 SC-70-6 zener 15v 27E4 55E-4
Contextual Info: FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital

Contextual Info: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

Contextual Info: FDW2517NZ Dual N-Channel 2.5V Specified Trench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching

Contextual Info: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

Contextual Info: May 2008 FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features  8.2A, 30V tmM General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

FDW2512NZ

Abstract: KP198
Contextual Info: May 2008 FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

FDW2601NZ

Abstract: N-Channel 2.5V 2601NZ
Contextual Info: May 2008 FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V tmM General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

2601NZ

Abstract: 47e3 Diode N7 S2 N9 S2 MARKING DIODE 096E-9 dual mosfet 337 Dual N-Channel 2.5V 17E-3
Contextual Info: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

C7 MARKING Fairchild

Contextual Info: FDM3622 N-Channel PowerTrench MOSFET tm 100V, 4.4A, 60m: General Description Features r DS ON = 44m: (Typ.), VGS = 10V, ID = 4.4A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

2511NZ

Abstract: m068 BV150 FDW2511NZ n10 diode 51E3 KP17 Diode N7 S2
Contextual Info: May 2008 FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V tmM General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

FDM3622

Abstract: TRS250
Contextual Info: FDM3622 N-Channel PowerTrench MOSFET 100V, 4.4A, 60mΩ General Description Features r DS ON = 44mΩ (Typ.), VGS = 10V, ID = 4.4A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

Contextual Info: May 2008 FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features  7.1A, 20V tmM General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

FDM606P

Abstract: m073
Contextual Info: FDM606P P-Channel 1.8V Logic Level Power Trench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching

m073

Abstract: FDM606P BTM marking
Contextual Info: FDM606P P-Channel 1.8V Logic Level Power Trench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching

nc7wz16l6x

Abstract: NC7WZ16P6X Z16 dual buffer NC7WZ16
Contextual Info: Revised May 2003 NC7WZ16 TinyLogic UHS Dual Buffer General Description Features The NC7WZ16 is a dual buffer from Fairchild’s Ultra High Speed Series of TinyLogic in the space saving SC70 6lead package. The device is fabricated with advanced CMOS technology to achieve ultra high speed with high

igbt current sensing

Abstract: FBA42060 home air conditioner circuit diagram
Contextual Info: Motion SPM FBA42060 Smart Power Module for Boost PFC Features General Description • 600V-20A rectifiers for single-phase ac input with IGBT switch for operation of active switching converter. FBA42060 is an advanced smart power module of PFC Power Factor Correction that Fairchild has newly developed and

3 phase rectifier circuit diagram igbt

Abstract: FPAM30LH60 PFC2012 1/FPAM30LH60
Contextual Info: FPAM30LH60 PFC SPM 2 Series for 2-Phase Interleaved PFC Features General Description • Low Thermal Resistance Thanks to Al2O3 DBC Substrate FPAM30LH60 Is A PFC SPM 2 Series for 2-Phase Interleaved PFC Power Factor Correction that Fairchild Has Developed for Mid-Power Home Appliance Applications