C701 SCR Search Results

C701PB

Abstract: C701 c701 scr C701L dissipator C701PA C701PC C701PD C701PE C701PM
Contextual Info: High Power Silicon Controlled Rectifier C701 12 5 0 A A v g ., u p to 20 0 0 Volts "A AMPLIFYING GATE ^ Y 1^ The C701 Series o f high power SCR’s feature the newly developed multi­ diffusion technology using 53mm diameter silicon in a new, pressuremounted package for phase control.

c701 scr

Abstract: C701 C701 T C701PM C701PN HEAF C701PB C701PC C701PD C701PE
Contextual Info: High Pow8r silicon^ 53mm Silicon Controlled Rectiflor POW€R 1 300 A / 2200 V C701 A M P LIFY IN G G A T * T he C 70I Reverse Blocking Thyristor now has extended voltage blocking capability through unique multi-diffusion processing o f 53 mm nominal silicon

c451

Abstract: c451p C701E C701T C702PN C451PM C701PB C451PM1 C702 C450
Contextual Info: RICHARDSON/ NATIONAL EL L 2E D • 7 7 3 i\e\17 0 0 0 0 7 0 5 53k. ■ NAT PHASE CONTROL SCRs N A T IO N A L T Y P E NO. C701 C702 C451 C451-2 C450-2 C451-1 C450 C450-1 J E D E C NO. 2000 1900 1900 2100 2200 2200 2400 2400 500-1700 1400-2900 500-2600 500-1800

C701

Abstract: c701 scr 7377 AGT Thyristor dissipator C701PM C701PN C701PA C701PB C701PC
Contextual Info: G E CO/ S T A T I C GE-SPCO PtilR CMPNT 3Ô7HS04 DGGQCH? T H 6 E S P 34E D High Power 53mm Silicon Controlled Rectifier I A / V Static Power Component Operation Mah>emJ,A USA 300 T - 2 5 - 2 - 1 2000 PG 6.050A 9/1/88 C701 AM PLIFY IN G G A TE The C70J Reverse Blocking Thyristor now has extended voltage blocking

c701 scr

Abstract: C701 ge scr 150a dissipator C440 C440E C440M C440N C701PN C440T
Contextual Info: PHASE CONTROL SCR's 2 7 6 .1 27 6 940 TO 1950 AMPERES GE TYPE ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION •t RMS . T (A V ) , T{ A V ) . TSM ,2. 11 y TM R Max. average on-state current @ 180° conduction (A) @ T q Max. average on*state current fo r 3^

Contextual Info: C 701 Intelligent Key Connector The Intelligent Key Connector provides a transportable „key-like“ housing for customer provided system boards which can be integrated in the Intelligent Key Connector housing. The housing can than be mated with the Intelligent Key Socket.

C598501-0104

Abstract: C709 Antennas vhf C701 T C701 C70-3 dm c70-1 C70-6 C-70-3 C598501
Contextual Info: COMMUNICATION MOUNTING HOLE PATTERN DM C70-1/A DM C70-3 DM C70-4 Inches Centimeters DM C70 SERIES VHF ANTENNA 360/720 CHANNEL BROADBAND SPECIFICATIONS FWD ELECTRICAL 0.170 (0.432) 4 MTG HOLES CSK 100° ON FARSIDE 0.810 1.620 (2.057) (4.114) Frequency Range .118 – 137 MHz

C502

Abstract: C380 C701 c398 3N222 A430 A570 C350 C390 C391
Contextual Info: HEAT EXCHANGER MODULES for HIGH CURRENT RECTIFIERS & SCRs G6/G14/G15 G9/G10/3N221/3N222 CELL DATA 180° C O N D U C T IO N , L IQ U ID C O O L E D A T 40°C 1 G PM C E L L NO. M AX. V O L T S P ER C E L L S IN G L E SU R G E AM PS A 390 A 430 A 540 A 570

Contextual Info: FIELD INSTALLABLE SHIELDED MULTI-CON-X® Conxall® introduces its newest series of “Con-X” product, the Field Installable Shielded Multi-Con-X®. This product was designed for field installations where: • Circuits must be protected from electromagnetic or radio frequency interference

diodes C441

Abstract: scr welding C380 General electric SCR Calcium Carbonate SCR 100A A430 A570 C350 C390
Contextual Info: HEAT EXCHANGER MODULES for HIGH CURRENT RECTIFIERS & SCRs G6/G14/G15 G9/G10/3N221/3N222 CELL DATA 180° C O N D U C T IO N , L IQ U ID C O O L E D A T 40°C 1 G PM C E L L NO. M AX. V O L T S P ER C E L L S IN G L E SU R G E AM PS A 390 A 430 A 540 A 570

General electric SCR

Abstract: c701 scr scr 151 C380 SCR 2000 SCR general electric scr welding general electric c350 A430 C350
Contextual Info: HEAT EXCHANGER MODULES for HIGH CURRENT R E C T IFIE R S & SCRs G 6 /G 14 /G 1 5 G 9 /G 1 0 /3 N 2 2 1 /3 N 2 2 2 CELL D ATA 180° C O N D U C T IO N , L IQ U ID C O O LE D A T 40°C 1 G PM C E L L NO. M A X . V O LT S PER C E L L S IN G LE SURGE AMPS A 390

GE C701pm

Abstract: C601PN c701 scr C701PN C601PB GE SCR 1000 c701pm C701 C702L C440
Contextual Info: PHASE CONTROL SCR's 276 GE TYPE ELE C T R IC A L SPECIFICATIO N S VO LTAG E RANGE FO RW ARD CONDUCTION •t RMS . T (A V ) , T{ A V ) . TSM ,2 . 11 y TM R 2 7 6 .1 940 TO 1950 A M P E R E S M ax. average on-state current @ 180° conduction (A ) @ T q M ax. average on*state current fo r 3^

W4DC105

Abstract: LP 8029 TR C458 w4dc162 W4DC132 NCT200 Thyristor w4dc162 w4dc162 pm W4DA250 w4da105
Contextual Info: Note: The data supplied in the enclosed tables is for general reference only. As data was collected from a number of sources, Richardson Electronics, Ltd. and its affiliates are not liable for its accuracy. Richardson Electronics, Ltd. and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Richardson Electronics makes no warranty, representation or guarantee regarding

water cooled thyristor assembly

Abstract: c398 high power thyristor scr water cooling c380 3c heat exchanger Heat exchanger air to air LSK Series A430 A570 C380
Contextual Info: HEAT EXCHANGER MODULES for HIGH CURRENT RECTIFIERS & SCRs G6/G14/G15 G9/G10/3N221/3N222 CELL DATA 180° C O N D U C T IO N , L IQ U ID C O O L E D A T 40°C 1 G PM C E L L NO. M AX. V O L T S P ER C E L L S IN G L E SU R G E AM PS A 390 A 430 A 540 A 570

transistor ge 703

Contextual Info: PD - 9.796A International ! or!Rectifier IRGBC30UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

GE C701pm

Abstract: C702LD C440 C440E C440M C440N C440S C440T C441 C601
Contextual Info: PHASE CONTROL SCR's 2 7 6 .1 27 6 940 TO 1950 AMPERES GE TYPE ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION •t RMS . T (A V ) , T{ A V ) . TSM ,2. 11 y TM R Max. average on-state current @ 180° conduction (A) @ T q Max. average on*state current fo r 3^

C601PN

Abstract: scotchbrite C701PN diodes C441 C702 C440 C440E C440M C701PM C440S
Contextual Info: PHASE CONTROL SCR's 2 7 6 .1 27 6 940 TO 1950 AMPERES GE TYPE ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION •t R M S . T (A V ) , T{ A V ) . TSM ,2. 11 y TM R Max. average on-state current @ 180° conduction (A) @ T q Max. average on*state current fo r 3^

High power SCR

Abstract: cb02p SCR 2000 lse 1006 C440 C440E C440M C440N C440S C441
Contextual Info: PHASE CONTROL SCR's 276 GE TYPE ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION •t R M S . T (A V ) , T{ A V ) . TSM ,2 . 1 1 y TM R 2 7 6 .1 940 TO 1950 A M P E R E S M ax. average on-state current @ 180° conduction (A ) @ T q M ax. average on*state current fo r 3^

SCR 2000V 1000A

Abstract: GE-SPCO C702 cycloconverters Thyristor ys 150 C702CA C701PN oms 450 thyristor YS Thyristor SCR C701L
Contextual Info: N l û E CO/ STATIC PUR CMPNT 3ME » 3074504 GDDG1G3 1 • ù E S P High Power 53m m Silicon Controlled Rsctifier GE-SPCO S ta tic Pntoer C nm nonent O peration fifnlnem .P A USA 1000 A Avg. Up To 3200 Volts "7\W\*| PG 6.052 9/1/88 [ C7 Q2 A M P L IF Y IN G G A T E

74C922

Abstract: MRK016CD2300 psd3xx PSD311 key encoder 74c922 bytek CENTRALAB memory mapping of motorola 68HC11 psd301 programming R702
Contextual Info: Programmable Peripheral Application Note 019 The PSD311 Simplifies an Eight Wire Cable Tester Design and Increases Flexibility in the Process – By Timothy E. Dunavin, Antec – Anixter Mfg. and Karen S. Spesard, WSI Abstract With the ever increasing complexity of wiring networks and cables to match a wide variety

LTA 702 N

Abstract: C702 diode C703 diode diode c706 transistor c708 C706 diode DIODE C705 C705 diode transistor ge 703 IRGBC30UD2
Contextual Info: PD - 9.796A IRGBC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

C702 diode

Abstract: C705 LTA 702 N IRGBC30UD2 C704 diode C705 diode
Contextual Info: PD - 9.796A IRGBC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

transistor c708

Abstract: LTA 702 N C702 diode C706 diode diode c706 IRGBC30UD2 c705
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.796A IRGBC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

ALC660

Abstract: LFE8423 RN203D thermistor d503 1C601 D5032 ALC660-GR D5071 CON503 12G171010049
Contextual Info: 5 4 3 2 1 F9F I/O Board SCHEMATIC Revision 2.00 D D PAGE Content SYSTEM PAGE REF. 1 2 3 4 5 6 7 8 INDEX B to B CONN F & TRANSFORMER USB PORTS+MDC AZALIA - ALC660-GR AUDIO_AMPLIFIER MICROPHONE PCI-E-MINI CARD History C C USB x2 Daughter Board MIC AMP MAX4490AXK