CANADA ICES CLASS B Search Results

Rack PDU

Abstract: AP7998
Contextual Info: APC World Wide[ Change] HomeProducts SupportServices Selectors How to Buy Switched Rack PDU Rack PDU, Switched, Zero U,12.5kW,208V, 21 C13&(3)C19; 10' Cord AP7998 Email Technical Specifications Printer Friendly AP7998 APC Switched Rack PDU , Input: 208V 3PH ,

33250A

Abstract: NMB-001 42Vpk UL 61010-1
Contextual Info: Agilent 33502A 2-channel 50 Vpp Isolated Amplifier Data Sheet • Full-power BW 100kHz @ 50Vpp • Small-signal BW> 300kHz • Slew Rate 20V/ s min. • THD+N < 0.01% @ 10kHz, 40Vpp. • Output drive 200mA max. • Isolation Floats ±42Vpk to earth The Agilent 33502A is a dual-channel,

Contextual Info: SCANNER-BT Hand-held Scanner for Android Mobile Devices Description For eVance Services enterprises using the Inspection Manager software, the SCANNER-BT provides all necessary scanning functions, working seamlessly with supported Android™ smart phones and tablets using

NSL12AW

Abstract: NSL12AWT1 NSL12AWT1G
Contextual Info: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features • • • • • 12 VOLTS 3.0 AMPS PNP TRANSISTOR High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A)

AM1011-300

Abstract: interrogator 1030 PULSED 32uS MODE-S 1030 PULSED 32uS MODE-S vcc 36
Contextual Info: AM1011-300 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTING LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 7.7 dB GAIN

Contextual Info: MMBTA05L, MMBTA06L Driver Transistors NPN Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring • http://onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

SMMBTA06LT1G

Abstract: SMMBTA06LT1 canada ices class b Marking 1GM MMBTA05
Contextual Info: MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

polaris

Contextual Info: Regulatory Compliance Polaris System Chassis The Polaris has been tested under the following specifications: NEBS, ETSI, FCC, UL, and CE. For full information on these tests, please call our office or visit our website. 4U Hot Swap & High Availability NEBS and ETSI Specifications

SD1446

Abstract: arco 468 M113
Contextual Info: SD1446 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 50 MHz Figure 1. Package ■ 12.5 VOLTS ■ EFFICIENCY 55% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 70 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1446 is a 12.5 V Class C epitaxial silicon

Contextual Info: Agilent N9310A RF Signal Generator 9 kHz to 3.0 GHz Data Sheet Definitions and Conditions The signal generator will meet its specifications when: • It is within its calibration cycle “Specifications” describe the performance of parameters covered by the

transistor marking code 12W

Abstract: transistor marking code 12W 80 8w RF POWER TRANSISTOR NPN M111 15 w RF POWER TRANSISTOR NPN TRANSISTOR C 460 865 RF transistor marking code 12w INTEGRATED CIRCUIT DATE code stmicroelectronics marking 12W
Contextual Info: SD1488 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 470 MHz Figure 1. Package ■ 12.5 VOLTS ■ EFFICIENCY 50% ■ COMMON EMITTER ■ POUT = 38 W MIN. WITH 5.8 dB GAIN DESCRIPTION The SD1488 is a 12.5 V Class C epitaxial silicon

motorola sps transistor

Abstract: motorola 572 transistor Motorola 1600 395C-01 sps transistor
Contextual Info: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR

IEC-1076-4-101

Abstract: gvrp 8102HA IXE5416 ZNYX Networks NetStructure PICMG 2.0 R3.0
Contextual Info: 16434_ZT8102_PB.qxd 5/23/03 10:22 AM Page 1 Product Brief Intel NetStructure ZT 8102 Switch and Intel NetStructure ZT 8102HA Switch ® ™ Product Overview The Intel® NetStructure™ ZT 8102 Switch and Intel® NetStructure™ ZT 8102HA Switch are part

TRANSISTOR motorola 838

Abstract: motorola diode 739 MRF16030 motorola rf Power Transistor Motorola 1600
Contextual Info: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz

MARKING 3NP

Abstract: NSM80101MT1G
Contextual Info: NSM80101MT1G NPN Transistor with Dual Series Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com Typical Applications • LCD Control Board • High Speed Switching • High Voltage Switching

Contextual Info: NSM80100MT1G PNP Transistor with Dual Series Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications http://onsemi.com • LCD Control Board • High Speed Switching • High Voltage Switching

Contextual Info: SD1726 THA15 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS FEATURES • OPTIMIZED FOR SSB • 30 MHz • 50 V • IMD-30 dB • COMMON EMITTER • GOLD METALLIZATION M174 epoxy sealed • POUT = 150 W PEP MIN. WITH 14 dB GAIN ORDER CODE SD1726 DESCRIPTION

Contextual Info: NSM80101MT1G NPN Transistor with Dual Series Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications http://onsemi.com • LCD Control Board • High Speed Switching • High Voltage Switching

SD1446

Abstract: M113 arco 468
Contextual Info: SD1446 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 50 MHz ■ Figure 1. Package 12.5 VOLTS s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l

TH430

Abstract: SD1728 M177 TH430 D Transistor TH430 D M177 SD1728
Contextual Info: SD1728 TH430 RF & MICROWAVE TRANSISTORS HF SSB APPLICATION • OPTIMIZED FOR SSB • 30 MHz • 50 V • IMD = -30 dB • GOLD METALLIZATION • COMMON EMITTER • POUT = 250 W PEP WITH 14.5 dB GAIN M177 epoxy sealed DESCRIPTION The SD1728 is a 50 V epitaxial silicon NPN planar

NSL05TT1

Abstract: SMD310
Contextual Info: NSL05TT1 High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com 5 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −5.0 Vdc Collector-Base Voltage

Logic Level Gate Drive mosfet

Abstract: NUS5530MN 506AL NUS5530MNR2G
Contextual Info: NUS5530MN Integrated Power MOSFET with PNP Low VCE sat Switching Transistor This integrated device represents a new level of safety and board−space reduction by combining the 20 V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated

NSS20300MR6T1G

Contextual Info: NSS20300MR6T1G Product Preview 20 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These

sps 1951 transistor

Abstract: MRF857S A 673 C2 transistor 851 MOTOROLA MOTOROLA ELECTROLYTIC CAPACITOR sps 1951 motorola rf Power Transistor transistor motorola 359 305D TL11
Contextual Info: Order this document by MRF857/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 – 960 MHz. CLASS A