CAPACITANCE111 Search Results

Contextual Info: W hat HEWLETT« mLMÆ PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical Pj dB at 2.0 GHz 20.5 dBm Typical Pi ¿b at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical Gi ^ at 2.0 GHz

CY7024

Contextual Info: fax id: 5213 PRELIMINARY CY7C024V/025V/026V CY7C0241V/0251V/036V 3.3V 4K /8K /16K x 16/18 Dual-Port Static RAM Autom atic power-down Expandable data bus to 32/36 bits or more using Mas­ ter/Slave chip select when using more than one device On-chip arbitration logic

INTEL D 2816

Abstract: 2816 rom 8155 intel microprocessor block diagram ROM 2816 2816 memory block diagram of intel 8155 chip Intel 2816 intel 8155 RAM 2816 8155 intel microprocessor architecture
Contextual Info: in te i [p ^ iy iM o iM c w 2816 16K 2K x 8 ELECTRICALLY ERASABLE PROM • HMOS*-E FLOTOX Cell Design ■ Conforms to JEDEC Byte-Wide Family Standard ■ Reliable Floating Gate Technology ■ Microprocessor Compatible Architecture ■ Very Fast Access Time

2164 dynamic ram

Abstract: 2118 intel 2164 RAM Intel 2164 2164 intel 2164 tea 2164 g hidden refresh Intel 2118
Contextual Info: intei' 2164-25 65,536 x 1 BIT DYNAMIC RAM 2164-25 Maximum Access Time ns 250 Read, Write Cycle (ns) 465 Read-Modify-Write Cycle (ns) 530 • Industry Standard 16-pin DIP 128 Refresh Cycles/2 ms RAS-only Refresh ■ HMOS Technology Non-Latched Output is Three-State

28hc64

Contextual Info: 28HC64/28HC64H 64K High Speed EEPR O M Technology, Incorporated ADVANCED DATA SHEET September 1992 Features • Military, Extended and Commercial Temperature Range • -5 5 ° C to *125° C Operation Military . -4 0 ° C to +8S°C Operation (Extended) • 0°C to +70°C Operation (Commercial)

E38C32

Contextual Info: E/M38C16 E/M38C32 High Speed CMOS Electrically Erasable PROM PRELIMINARY DATA SHEET October 1989 Features • ■ ■ ■ ■ Military and Extended Temperature Range High Speed Address/Data Latching 50 ms Chip Erase 5V ±10% Power Supply Power Up/Down Protection Circuitry

P80A49H

Abstract: 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel
Contextual Info: COMPONENT DATA CATALOG JANUARY 1982 Intel C orporation makes no w arranty fo r the use of its products and assumes no re sponsib ility fo r any e rrors w hich may appear in th is docum ent nor does it make a com m itm ent to update the info rm atio n contained herein.

ns 250n

Abstract: 64k x 4 sram sram 64k CYM1423PD45C cym1423pd
Contextual Info: _ CYM1423 CYPRESS ' SEMICONDUCTOR 128K x 8 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module T h e CYM 1423 is a high-perform ance 1-megabit static R A M m odule organized as 128K words by 8 bits. T his m odule is

la 76805 volt on pin

Abstract: intel 8708 eprom M3002 Pulse M3001 eprom 8708 2316a rom UPP-103 interfacing 8275 crt controller with 8086 intel 1402a Pascall
Contextual Info: Intel Corporation 3065 Bowers Avenue • Santa Clara, CA 95051 Telephone: 408 987-8080 TWX: 910-338-0026- Telex: 34-6372 inter Component Data Catalog 1978 Numerical and Functional Indexes 1 General Information 2 Random Access Memory 3 Read Only Memory 4

28c64 military

Abstract: 28C64 plcc 28c64-200 28C64 28C64 EEPROM
Contextual Info: 28C64 Technology, Incorporated Timer E2 64K Electrically Erasable PROM July 1991 Features • P ow er U p/D own P rotection Circuitry UHItary, E xtended a n d C om m ercial Tem perature Range

TL 1471

Abstract: CYM1481PF85C
Contextual Info: P R E L IM IN A R Y CYPRESS SEMICONDUCTOR 1024K X 8 SRAM Module 2048K X 8 SRAM Module Features Functional Description • The CYM1471 and CYM1481 are highperformance 8-megabit and 16-megabit static RAM modules organized as 1024K words 1471 or 2048K words (1481) by 8

Contextual Info: CYM1461 r^ yp pT ?cc SEMICONDUCTOR Features Functional Description • High-density 4-m egabit SRAM module T h e CYM 1461 is a high-perform ance 4-m egabit static R A M m odule organized as 512K words by 8 bits. T his m odule is constructed from sixteen 32K x 8 SR A M s

Contextual Info: MOSEL M S 6 M 8512 512K x 8 CMOS Static RAM Module FEATURES DESCRIPTION •4M b SRAM m odule com patible with JEDEC standard pinout for 512k x 8 SRAM 1Available in 70/85/100 ns access tim es ■Fully static operation 1All inputs and outputs directly T TL com patible

intel 2816A

Abstract: intel 2816 eeprom for DQ 2816-A 250 2816A 2816A eeprom INTEL D 2816 intel 2816 eeprom 2816A vpp eeprom 2816A ic rom 2816
Contextual Info: ir r t e T PffigUM DNAO ftf 2816A 16K 2K x 8 ELECTRICALLY ERASABLE PROM 5 Volt Only Operation Fast Read Access Time: —2816A-2, 200ns —2816A, 250ns -2816A-3, 350ns —2816A-4, 450ns HMOS*-E Flotox Cell Design Minimum Endurance of 10,000 Erase/Write Cycles per Byte

Contextual Info: 256K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4068 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 2 megabit CM O S static RAM module • Equivalent to the JEDEC standard for future monolithic 256K x 8 Static RAMs • Fast access time: 17ns max.

01404

Abstract: SEEQ TECHNOLOGY 48C1024
Contextual Info: SEEÖ S1 19233 TECHNOLOGY SEEQ TECHNOLOGY INC Tö Ô Ë J 011^233 INC □ □ □ 1 3 cî h 98D 0 1396 M DJ~Q6-I3'Z1 4 8 C 5 1 2 /4 8 C 1 0 2 4 5 1 2 K /1 0 2 4 K F L A S H E E P R O M J u ly 1 98 7 A D V A N C E JJATA S H E E T Features • 64K/128K Byte Writable non-volatile memory

seeq 2817a

Abstract: eeprom 2817A 2817A eeprom 2817 2817 seeq 2817 EEPROM 2817A EEPROM 2817AH 5517a
Contextual Info: Timer E2 16K Electrically Erasable PROMs August 1992 Features • Military Extended and Commercial Temperature Range • - 5 5 0C to +125° C Operation Military . - 4 0 ° C to +85° C Operation (Extended) • 0 °C to +70° C Operation (Commercial) ■

27C256 rom

Contextual Info: 27C256 256K CMOS EPROM November 1989 Pin Configuration Features 27C256 m 2 5 6 K 3 2K x 8 C M O S E PR O M Ultra Lo w P ow er • 100 \iA Max. Vcc S tandby C urrent • 4 0 m A Max. A ctive C urrent • ■ Vpp 28 S V cc 2 27 J A 14 3 26 J a 13 c 4 25 J

Contextual Info: 28C256A Technology, Incorporated 256K High Speed EEPROM August 1992 FEATURES • ■ M ilitary, Range • -5 5 ° C • —40° C • 0 ° C to ■ Data Protection Extended a n d Com m ercial Temperature • Hardware: Power Up/Down Protection Circuitry • JEDEC Approved Software Write Protection

intel 8155

Abstract: 8155 intel microprocessor architecture INTEL 8155 PIN DETAILS 8155 intel microprocessor pin diagram 8155 intel microprocessor block diagram M2816 microprocessors interface 8086 to 8155 block diagram of intel 8155 chip INTEL 8155 PIN INTEL 8155 PINOUT
Contextual Info: in t e i M2816 16K 2K x 8 ELECTRICALLY ERASABLE PROM M IL IT A R Y • HMOS*-E FLOTOX Cell Design ■ Conforms to JEDEC Byte-Wide Family Standard ■ Reliable Floating Gate Technology ■ Microprocessor Compatible Architecture ■ Very Fast Access Time — 300 ns Max. — M2816

Contextual Info: MOSEL MS82C308 2 x 2K x 16 Cache Data RAM FEATURES DESCRIPTION • Supports 16 bit wide 80286 and 32 bit wide 80386 system cache data requirements directly. The MOSEL 82C308 is a high performance CMOS static RAM optimized for use as cache subsystem data buffers in

Contextual Info: fax id: 5213 CYPRESS PRELIMINARY CY7C024V/025V/026V CY7C0241V/0251V/036V 3.3V 4K /8K /16K x 16/18 Dual-Port Static RAM Features A u to m atic p ow er-dow n E xp a n d ab le d ata bus to 32 /36 b its o r m o re using M a s ­ te r/S la v e ch ip s e lect w h e n using m o re th an o n e d evice

27256 ROM pin configuration

Abstract: 27256 pin diagram 27256-30 27C256 27256 block diagram EPROM 27256 seeq 27256 EPROM specification Vpp of 27256 eprom 27256-25
Contextual Info: * • * • " 4 i / ' • 27256 256K EPROM A u g u s t 1985 F eatu res D e sc rip tio n SEEQ's 27256 is a 256K ultraviolet lig h t erasable EPROM. It is organized as 32K x 8, operates from a single 5V supply, and program s using a 12.5V in te lli­ gent algorithm . The 27256's operating co n ditions are

48C1024

Abstract: 48C512
Contextual Info: SEE 2 TECHNOLOGY 8119233 SEEQ TECHNOLOGY INC Tfl "deJ 011^233 ooDina s J - INC 98D 01198 DT-4fc~/3-r7 4 8 C 5 12 / 4 8 C 1 0 2 4 5 1 2 K /1 0 2 4 K FLASH EEPROM July 1 987 A D V A N C E D A TA S H E E T Features • 64K /128K B yte Writable Non-Volatile Memory