CAPACITOR 47 NF Search Results

yageo Phycomp 2238

Abstract: Phycomp Components 2238 2238 yageo Phycomp Components PHYCOMP 2222 YAGEO C0603 X7R yageo 2255 Phycomp c0603 PHYCOMP 2222 580 phycomp capacitors X7R 1206 2238
Contextual Info: DISCRETE CERAMICS DATA SHEET Class 2, X5R/X7R High Capacitance 6.3V to 50V, 68 nF to 47 µF Surface mount ceramic multilayer capacitor Product specification VPSG_4 august 2002 Phycomp Components Product specification Surface mount ceramic Multilayer capacitor

EXCCET Type

Abstract: 3 terminal capacitor applications of capacitor filter Digital Equipment "Noise Filter"
Contextual Info: Applications Part Number Signal AbsorpPower High tion Supply Frequency Degital Analogous of Surge Signal Signal Low Noise Fuse Filter For Automatic Sensor Placement EXCCL/ML/3B ● EXCCET ● EZANC/SC/NF ● EZANP ● EZAST ● EXCEL ● EXCEMT/CMT ● Page

10100pF

Abstract: ac04
Contextual Info: C31E6.pdf 01.5.29 This is the PDF file of catalog No.C31E-6 On-Board Type DC EMI Suppression Filters(EMIFILr) Chip EMIFILr RC Combined Type NFR21G Series (Surface) • Features The NFR21G series comprise high performance EMI suppression filter which can suppress distortion of

334k capacitor

Abstract: capacitor 104k x7r 50 104K capacitor 104k x7r 100 capacitor 22 pf capacitor 104k x7r 50 ATC capacitor 100b 100B Zener 104k x7r 100 murata CAPACITOR 334k
Contextual Info: DB-85025-520 BOM Designator Manufacturer B1 PANASONIC Size B2 PANASONIC C1, C2 MURATA 1206 Value Comment Part Code Ferrite Bead EXCELDRC35C Ferrite Bead EXCELDRC35C 120 pF Capacitor GRM42-6 COG 121J 50 C3 MURATA 1206 1 nF Capacitor GRM42-6 COG 102J 50 C4 MURATA

NFA6CC

Abstract: 40KHZ ULTRASONIC CLEANER CIRCUIT NFA6
Contextual Info: C31E6.pdf 01.5.29 This is the PDF file of catalog No.C31E-6 On-Board Type DC EMI Suppression Filters(EMIFILr) Chip EMIFILr Arrays RC Combined Type NFA31G Series (Surface) (7) (8) NFA31G series is high performance EMI suppression filter array which designed 4 circuits noise filter in

Contextual Info: + 85°C Standard Radial Lead Aluminum Electrolytic Capacitors 7 For a ll general purpose applications FEATURES • Standard size ■ Wide capacitance range: ■ Wide voltage range: 6.3 WVDC to 450 WVDC ■ Solvent tolerant end seals standard 0.1 nF to 15000 /jF

SMD LD3

Abstract: SMD ZENER DIODE u5 smd C105 VOGT r6 SMD ZENER DIODE u6 VOGT N2 SL0607111102 VOGT N1 50 bc557 SMD vogt transformer
Contextual Info: STEVAL-ILH001V1 Bill of material PFC bill of material Name Value Rated Type C1 1 µF 400 V polyester capacitor C2 10 nF 50 V ceramic C5 1 µF 50 V ceramic C6 330 pF 50 V ceramic C7 560 pF 50 V ceramic C8 470 nF 630 V EPCOS B32523Q8474K C9 220 µF 450 V EPCOS electrolytic capacitor

Contextual Info: ñemeo ALUMINUM ELECTROLYTIC SURFACE MOUNT CAPACITORS Type CB 5°C FEATURES NMCOS009 • Low cost, high reliability surface mount construction • Life: 1000 hours at +85°C • Capacitance range: 0.1 nf to 220 ¿if • Voltage range: 4 volts to 50 volts •

ceramic capacitor 6,8 nF 1kV p 5

Abstract: ceramic capacitor 1kV 6.8 nF
Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS Soft termination Class 2, X7R 16 V TO 1 KV 100 pF to 1000 nF Product Specification – November 26, 2012 V.3 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors

12062F105M8BB0D

Abstract: SAC305 YNM0009 YNM0019 YNM0020 General Purpose & High Cap. Y5V
Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose & High capacitance Class 2, Y5V 6.3 V TO 50 V 10 nF to 47 µF Product Specification – Jul 29, 2010 V.5 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors

General Purpose & High Cap. Y5V

Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose & High capacitance Class 2, Y5V 6.3 V TO 50 V 10 nF to 47 µF Product Specification – Jul 29, 2010 V.5 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors

material composition of chip capacitors

Abstract: General Purpose & High Cap. Y5V
Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose & High capacitance Class 2, Y5V 6.3 V TO 50 V 10 nF to 47 µF Product Specification – Jul 29, 2010 V.5 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors

material composition of chip capacitors

Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS Soft termination Class 2, X7R 16 V TO 630 V 100 pF to 1000 nF Product Specification – September 05, 2011 V.2 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors

BB501M

Abstract: DSA003643
Contextual Info: BB501M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-700D Z 5th. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz

BB601M

Abstract: DSA003711 DSA00371110.
Contextual Info: BB601M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-702C Z 4th. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz

811b transistor

Abstract: BB503M Hitachi DSA00395
Contextual Info: BB503M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-811B Z 3rd. Edition Jul. 1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

BB503C

Abstract: DSA003644
Contextual Info: BB503C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-812C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

BB503M

Abstract: ADE-208-811C DSA003644
Contextual Info: BB503M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-811C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

BB503C

Abstract: SC-82AB Hitachi DSA00310
Contextual Info: BB503C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-812B Z 3rd. Edition Jul. 1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

BB501C

Abstract: DSA003643
Contextual Info: BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701D Z 5th. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz

Hitachi DSA0076

Abstract: BB601M BIC601M
Contextual Info: BB601M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-702D Z 5th. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz

BB501

Abstract: BB501M Hitachi DSA00395
Contextual Info: BB501M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-700C Z 4th. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz

BB501

Abstract: BB501C SC-82AB Hitachi DSA00311
Contextual Info: BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701C Z 4th. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz

BB603M

Abstract: L1103 Hitachi DSA0023 Hitachi DSA00232
Contextual Info: BB603M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-816D Z 5th. Edition Dec. 2000 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f =900 MHz High gain; PG = 22 dB typ. at f = 900 MHz