CAPACITOR HS35 Search Results

KEC DATE code

Abstract: Kemet CAPACITOR DATE CODE MARKING ON ceramic MIL-PRF-49467 7400 Kemet CAPACITOR DATE CODE MARKING kemet ceramic 49467 HV23 HV26 KEC MARKING CODE HV25
Contextual Info: High Voltage Radial Conformally Coated Ceramic Capacitors HV Series CAPACITOR OUTLINE DRAWING L DIMENSIONS T HV20 HV21 HV22 HV23 HV24 HV25 HV26 HV30 HV31 HV33 HV34 HV35 HV36 H 1.25 Min. S Sizes in Inches mm max. Style .025 (22 ga.) solder plated Cu-clad Steel (CCFE)

C3H marking

Abstract: C3K marking marking c1g PC3224TB marking c3k PC3215TB C3k mmic marking c1h capacitor feed-through C1H mmic
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The PC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3232TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

PC3223TB

Abstract: marking c3j C1f TRANSISTOR marking c1d PC3223TB-E3 PC2708TB PC2709TB UPC3223TB PC3223TB-E3-A PC2710TB
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

DFT301-801

Abstract: DFT301 GRM40CH102J50PT GRM39CH100D50PT GRM39CH080D50PT PC8128TB GRM39CH050C50PT
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8179TK 3 V SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 

DFT301

Abstract: DFT301-801 grm40ch102j50pt PC8179TK-E2 7R102S50 GRM39CH100D50PT marking code 18 6pin GRM39CH080D50PT PC8178
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8179TK 3 V SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 

marking C3Z

Abstract: marking c1h PC3242TB PC2712TB "Marking k2" mmic
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The PC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

8712 RESISTOR

Abstract: NES1823M-180
Contextual Info: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 180 W of output power CW with high linear gain, high

NES1823M-180-A

Contextual Info: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It operates at 12 V and is capable of delivering 180 W of output power CW with high

Transistor C3E

Abstract: C2H marking
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3241TB 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3241TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3241TB 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3241TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

RO4003C

Abstract: S11F PC2710TB C3J marking UPC3223TB marking c3j marking c3s
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3232TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

J3780

Abstract: IMT-2000 NES1823M-240 J4083
Contextual Info: DATA SHEET GaAs FET NES1823M-240 240 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT-2000 base station systems. It is capable of delivering 240 W of output power CW with high linear gain, high

NEC 09030

Abstract: NEM090303M-28 8712 RESISTOR ldmos nec
Contextual Info: PRELIMINARY DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090303M-28 N-CHANNEL SILICON POWER MOS FET FOR UHF-BAND POWER AMPLIFIER DESCRIPTION The NEM090303M-28 is an N-channel enhancement-mode lateral MOS FET designed for driver stage in 0.5 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/D-AMPS/PDC cellular base station amplifiers. Dies are

NES1823M-240

Abstract: j3780
Contextual Info: DATA SHEET GaAs FET NES1823M-240 240 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It operates at 12 V and is capable of delivering 240 W of output power CW with high

MARKING C3F

Abstract: PC8182TB PC8181TB F MARKING 6PIN transistor marking wt
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.

6 GHZ nec

Abstract: PC2710TB transistor marking c3n C3J marking 8125 marking c3j
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3232TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3240TB 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION The PC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

C3H marking

Abstract: UPC3224TB HS350 marking c1h UPC2712TB c3k cel
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

HS350

Abstract: C3K marking uPC2711 marking C3K marking c1g
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

PC8231TK

Abstract: marking 6K
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8231TK SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The PC8231TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications. This device exhibits low noise figure and high power gain

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8211TK SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The µPC8211TK is a silicon germanium SiGe monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications.

Transistor Marking C3

Abstract: PC2710TB UPC3223TB PC3223TB marking c3j HS350 PC2708TB marking c1d PC3223TB-E3 PC3223TB-E3-A
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

C3j marking

Abstract: UPC3223TB marking c3j HS350 PC2710TB marking c1d PU10491EJ01V0DS UPC3223TB-E3
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.