CAPACITY TC 209 Search Results

2SK3046

Contextual Info: Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 ■ Absolute Maximum Ratings TC = 25°C

Contextual Info: 30Amp Schottky Barrier Rectifier FST3080 - FST3090 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes G— Microsemi Catalog Number .185 .110 .059 .040 .079 .118 .016 .860 .627 .215 .795 .157 .118 .268 .175 .068 A B C D E F G H J K L M N P R .209

Contextual Info: 50Am p Schottky Barrier Rectifier Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes - c .185 .110 .059 .040 .079 .118 .016 .860 .627 .215 .795 .157 .118 .268 .175 .068 A B C E F G H J K L M N P R G - K ~B .209 .125 .098 .055 .094 .133 .031 .883

r3175

Abstract: FST3060 30CPQ060 MBR3060WT
Contextual Info: 30Amp Schottky Barrier Rectifier FST3060 Dim. Inches Minimum .185 .087 .059 .040 .079 .118 .016 .819 .627 .215 .790 .157 .139 .255 .170 .080 A B C D E F G H J K L M N P Q R M illim eter Maximum Minimum Maximum Notes .209 .102 .098 .055 .094 .133 .031 .883

30CPQ060

Abstract: FST3060 MBR3060WT
Contextual Info: 30Amp Schottky Barrier Rectifier FST3060 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes .185 .087 .059 .040 .079 .118 .016 .819 .627 .215 .790 .157 .139 .255 .170 .080 A B C D E F G H J K L M N P Q R .209 .102 .098 .055 .094 .133 .031 .883 .650

FST5020

Abstract: FST5030 FST5040 FST5045 FST5050 142-C
Contextual Info: 50Amp Schottky Barrier Rectifier FST5020 - FST5050 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes ,185 .110 .059 .040 .079 .118 .016 .860 .627 .215 .795 .157 .118 .268 .175 .068 A B C D E F G H J K L M N P Q R .209 .125 .098 .055 .094 .133 .031

Contextual Info: 50Amp Schottky Barrier Rectifier FST5020 - FST5050 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D E F G H J K L M N P Q R ,185 .110 .059 .040 .079 .118 .016 .860 .627 .215 .795 .157 .118 .268 .175 .068 .209 .125 .098 .055 .094 .133 .031

11 ak 30 a4

Abstract: AKN624016F AKN624016P AKN6240I6F D101 431AL
Contextual Info: A K N 624016 S e rie s 1048576-Word x 16-Bit/2097152-Word x 8-Bit CMOS Mask Programmable ROM AKN624016P is a 16-Mbit CMOS mask-programable ROM organized either as 1048576-word x 16-bit or as 2097152-word x 8bit. It can be operated with a battery because of low power

Airpax circuit breaker cross reference

Contextual Info: 209 Series Magnetic Circuit Protectors Introduction • 173 249 Power Selector System • 175 Multi-Pole • 177 Configurations • 179 Operating Characteristics • 181 Delay Curves • 182 Specifications • 185 Decision Tables • 187 209/219/229/249/279 Series

SKB15N60HS

Contextual Info: Preliminary Datasheet SKB15N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation G E • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:

Contextual Info: 209 Series Magnetic Circuit Protectors Introduction • 173 249 Power Selector System • 175 Multi-Pole • 177 Configurations • 179 Operating Characteristics • 181 Delay Curves • 182 Specifications • 185 Decision Tables • 187 209/219/229/249/279 Series

overcurrent relay inverse normal curves

Abstract: Airpax relay UL1077 Airpax E53739 Airpax 07 Airpax motor airpax step motor 229D 229G
Contextual Info: 209/219/229/249/279 209/219/229/249/279 Series Magnetic Circuit Protectors Introduction | 204 249 Power Selector System | 206 Multi-Pole | 208 Configurations | 210 Operating Characteristics | 212 Delay Curves | 213 Specifications | 216 Decision Tables | 218

EF25 transformer

Abstract: etd39 core type smps full bridge transformer design Nyleze AN-16 topswitch EF20 TRANSFORMER epoxylite 203 TDK EF25 EPOXYLITE 814 EE19 TDK Ferrite Core PC40 EFD20 TDK Ferrite Core PC40
Contextual Info: TOPSwitch Flyback Transformer Construction Guide ® Application Note AN-18 Introduction Ferrite Core Manufacturer’s Catalogs This application note is a design and construction guide for margin wound or triple insulated wire wound flyback transformers suitable for use with TOPSwitch. Margin wound

telemecanique xb2

Abstract: telemecanique pushbutton zb2 telemecanique pushbutton emergency stop XALD02 ral 7035 paint XAP M2203 telemecanique xb4 telemecanique control station SK A1104 M1501
Contextual Info: Control stations Harmony Your choice simplified Simply Smart! Control stations Harmony An extensive offer. Leveraging ingenuity and intelligence for ease of use Backed by technological and industrial mastery of control and signalling systems, and our vast experience, the Telemecanique control station offer comprises

K15N60

Abstract: SKB15N60HS PG-TO263-3-2 T150H
Contextual Info: SKB15N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

SKB15N60HS

Contextual Info: SKB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

K15N60

Abstract: K15N60HS
Contextual Info: SKB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

c2348

Contextual Info: A K N 624017 Series 1048576-Word x 16-Bit/2097152-Word x 8-Bit CMOS Mask Programmable ROM AKN624017 is a 1 6 -M b it CMOS m as k -p ro g ra m a b le ROM P IN C O N FIG U R A TIO N o rg an ized eith er as 1 0 4 8 5 7 6 -w o rd x 16-bit or as 2 0 9 7 1 5 2 -w o rd x 8 bit. It can be o p e ra te d with a battery b e c a u s e of low p ow er

K15N60

Contextual Info: SKB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

SKB15N60HS

Contextual Info: SKB15N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

K15N60

Abstract: K15N60HS
Contextual Info: SKB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

SGB15N60HS

Abstract: S4535 Q67040-S4535
Contextual Info: Preliminary Datasheet SGB15N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation G E • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:

NEC LASER DIODE butterfly package

Contextual Info: PRELIMINARY DATA SHEET_ NEC LASER DIODE MODULE NDL7540P 1480 nm OPTICAL FIBER APPLICATIONS InGaAsP MQW-DFB LASER DIODE MODULE FEATURES • InGaAsP Strained M Q W DC-PBH laser diode • H igh output power Pf=110mW @ !F=500m A CW • Internal optical isolator, therm o electric cooler and m onitor photo diode

FWSL315PT

Contextual Info: E L E C T R O N I C FWSL315PT Power Schottky Rectifier - 45Amp 45Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity