CASE SYMBOL B03 DIODE Search Results

DS9285

Abstract: DS9285A ds-9285
Contextual Info: RT9285A/B Tiny Package, High Performance, Diode Embedded White LED Driver General Description Features The RT9285 is a high frequency asynchronous boost converter with internal diode, which can support 2 to 5 White LEDs for backlighting and OLED power supply. The

C7110

Abstract: MSC7110-01 MSC7112-01 QFP44-P-910-0 C7112-01 b1517 4 digit 7 segment display 28 pin configuration
Contextual Info: E2C0028-27-Y4 ¡ Semiconductor MSC7110-01/7112-01 ¡ Semiconductor ThisMSC7110-01/7112-01 version: Nov. 1997 Previous version: Jul. 1996 12-Segment ¥ 16-Digit or 16-Segment ¥ 12-Digit Display Controller/Driver GENERAL DESCRIPTION The MSC7110-01/MSC7112-01 is a display controller to display the timer of video tape recorder,

Contextual Info: WTE POWER SEMICONDUCTORS SS0520FL – SS0540FL Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features  Low Turn-on Voltage   Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability

MSC7112-01

Abstract: oki C7112-01 Digital Pulse Counter Two Digit MSC7110-01 MSC7112-01SS QFP44-P-910-0 C7112-01
Contextual Info: FEDL7110-03 ¡ Semiconductor MSC7110-01/7112-01 ¡ Semiconductor FEDL7110-03 This version: Sep. 2000 MSC7110-01/7112-01 Previous version: Nov. 1997 12-Segment ¥ 16-Digit or 16-Segment ¥ 12-Digit Display Controller/Driver GENERAL DESCRIPTION The MSC7110-01/MSC7112-01 is a display controller to display the timer of video tape recorder,

oki C7112-01

Abstract: C7112-01 Digital Pulse Counter Two Digit MSC7110-01 MSC7112-01 MSC7112-01SS QFP44-P-910-0 b1517
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

BYT12-400

Abstract: byt12 Scans-00144720
Contextual Info: r i T ^ 7# S G S -T H O M S O N [M g [R ](ô [iL lC T (s « S B Y T 1 2 -2 0 0 -> 4 0 0 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SW ITCHING LOSSES ■ LOW NOISE TURN-OFF SW ITCHING SUITABLE A PPLICATIO N S : ■ FREE WHEELING DIODE IN CONVERTERS

RT9612B

Abstract: RT9612 RT9612AGQW package symbol B03 diode RT96 RT9612BGQ
Contextual Info: RT9612A/B Synchronous-Rectified Buck MOSFET Driver General Description The RT9612A/B is a high frequency, synchronous rectified, single phase dual MOSFET driver designed to adapt from normal MOSFET driving applications to high performance CPU VR driving capabilities.

RT9611

Abstract: RT9611AGQW RT9611A RT9611AZQW RT96
Contextual Info: RT9611A/B Synchronous Rectified Buck MOSFET Drivers General Description Features The RT9611A/B is a high frequency, synchronous rectified, single phase dual MOSFET driver designed to adapt from normal MOSFET driving applications to high performance CPU VR driving capabilities.

Contextual Info: RT8237A/B High Efficiency Single Synchronous Buck PWM Controller General Description Features The RT8237A/B PWM controller provides high efficiency, excellent transient response, and high DC output accuracy needed for stepping down high voltage batteries to

SOD-123FL

Contextual Info: SS0520FL – SS0540FL WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features  Low Turn-on Voltage   Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability

SOD123FL

Abstract: SOD-123FL SS0520FL SS0520FL-T1 SS0530FL SS0530FL-T1 SS0540FL SS0540FL-T1
Contextual Info: SS0520FL – SS0540FL WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability

SS0520FL

Abstract: SS0520FL-T1 SS0530FL SS0530FL-T1 SS0540FL SS0540FL-T1 SOD-123FL
Contextual Info: SS0520FL – SS0540FL WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection ! Designed for Surface Mount Application C ! Plastic Material – UL Recognition Flammability

Contextual Info: SS0520FL – SS05100FL 0.5A SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Turn-On Voltage   Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT VERTICAL DRIVER FOR CCD SENSORS The ,uPD16520 is a vertical driver for CCD image sensors that has a level conversion circuit and a 3-level output function. Since it incorporates a CCD vertical register driver equivalent to the ^¡PD16510 10 channels, consisting of

Contextual Info: SIEMENS BUP 307 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type BUP 307 VCE h 1200V 35A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-218AB Q67078-A4201-A2 Maximum Ratings

3TF SIEMENS

Abstract: IC 14511 diode 14512 H 3TF-11 SIEMENS BUZ23 SIEMENS C67078-A1002-A2 BUZ23
Contextual Info: aaD D • as35bQ5 q g i h s i o a h s i e g 14510 D 1~' 3 * ? ' / / 88D BUZ 23 SIEMENS AKTIENGESELLSCHAF _ Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-reslstance Description Case K>8 = 100 V - 10 A

TTH30

Abstract: SLD303WT SLD303WT-1 SLD303WT-2 SLD303WT-21 SLD303WT-3
Contextual Info: S L D 303 W T S o n y , 5 0 0 m W High Power Laser Diode |For the availability of this product, please contact the sales office?! D e s c rip tio n P a c k a g e O u t lin e SLD303W T is a gain-guided, high-power laser diode w ith a built-in TE cooler. Fine tuning of the

DIODE S45

Abstract: C67078-A3308-A2
Contextual Info: ôôd d • aaBâbDâ Goiso^a □ m s i e g 88D 15098 D T V3 ^ 7 3 ' 3 BUZ 383 SIEMENS AKTIENGESELLSCHAF -Main ratings N-Channel Drain-source voltage Continuous drain current Drain-source on-resistance Description Case L'os h ^DS on 400V 11,6 A

buz 90 af

Contextual Info: fiflD » • 88D ê23SbQ5 0014604 3 ■ S I E Û _ 14804 D T “ 3 eì-/1 _ BUZ 83 SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel » 800 V Draln-source voltage Its = 2,9 A Continuous drain current Jo Draln-source on-resistance ^DS on = 4,0 n Description

d880

Contextual Info: öflD D • fl23SbGS 00150^0 G « S I E G 88D 15098 D T * mS f f î ' C b BUZ 383 SIEMENS AKTIEN6ESELLSCHAF Main ratings N-Channel Drain-source voltage Continuous drain current Draln-source on-resistance Description Case voa h ^D S o n a 400V » 11,6 A = 0,5 Si

GD 743 Siemens

Contextual Info: SIEMENS BUZ 103 AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also In TQ-220 SMD available Type BUZ103AL ^bs 50 V b 35 A ^DS on

Contextual Info: - Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK545-200A/B PHILIPS N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended tor use in

K575

Abstract: BUK575 BUK575-200A BUK575-200B 05 k575 BUK575-200
Contextual Info: - 3 9 -0 ? Philips Components Data sheet status Prelim inary specification d ate of issue March 1991 R eplaces B U K 5 4 5 -2 0 0 A /B PHILIPS PowerMOS transistor Logic level FET SbE D INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power

AB29 DIODE

Contextual Info: Electrical Characteristics 12.1 Signal Specifications 12.1.1 Unused Pins 12 For reliable operation, always connect unused inputs to an appropriate signal level. Unused AGTL+ inputs should be connected to VTT. Unused active low 3.3V-tolerant inputs should be