Untitled
Abstract: No abstract text available
Text: CC 05 / CC 06 TCE 50 / TCE 60 CONDENSATEURS CERAMIQUE MOULES CLASSE 1 MOLDED CERAMIC CAPACITORS CLASS 1 E12 E24 E48 E96 Capacité Capacitance 200 V CC 06 - CCR 06 TCE 60 - TCE 60 R Céramique classe 1 Chips multicouches moulé résine époxy CARACTERISTIQUES ELECTRIQUES
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Untitled
Abstract: No abstract text available
Text: CC24_ _500N CN24_ _500N Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Super Fast Recovery Dual Diode Modules 50 Amperes/300-600 Volts H J A B J C G M H J (3 TYP.) N - DIA. R - M4 THD (3 TYP.) D Q L (2 TYP.) Q K E F P CC
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Amperes/300-600
500N/CN24_
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RESISTOR NY4 100K
Abstract: RC3T resistor "color code" VISHAY BC 150 RC21U marking K4 4N rs58y resistor color code
Text: Data sheet E 1/3.333 - 10497 N. NT.S ± 15 ppm/°C NP.S ± 25 ppm/°C NY. ± 50 ppm/°C NK. ± 100 ppm/°C N. ± 200 ppm/°C CC cut and band leads HF high frequencies 0,125 W to 0,5 W at 70°C NFC 83-230 / CECC 40 100 DIN 45291 / BSE 9111 MIL-R-39017 / ESA-SCC 4001
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MIL-R-39017
RESISTOR NY4 100K
RC3T
resistor "color code"
VISHAY BC 150
RC21U
marking K4 4N
rs58y
resistor color code
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC7SZ32AFE UND^R DEVELOPMENT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SZ32AFE 2 INPUT OR GATE FEATURES • High Output Drive : ±24mA (Typ.) • Super High Speed Operation : tpo 2.4 ns (Typ.) @ V Cc = 3 V @ V Cc = 5 V, 50 pF
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TC7SZ32AFE
TC74LCX
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC7SZ00AFE UND^R DEVELOPMENT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SZ00AFE 2 INPUT NAND GATE FEATURES • High Output Drive : ±24mA (Typ.) • Super High Speed Operation : tpo 2.4 ns (Typ.) @ V Cc = 3 V @ V Cc = 5 V, 50 pF
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TC7SZ00AFE
TC74LCX
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC7SZ04AFE fuND^R DEVELOPMENT T0SHIBA CM0S D|GITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SZ04AFE INVERTER FEATURES • ±24mA Typ.) @ V CC = 3 V High Output Drive • Super High Speed Operation tpD 2.4 ns (Typ.) @ V CC = 5 V, 50 pF Operation Voltage Range
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TC7SZ04AFE
TC74LCX
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC7SZ08AFE fuND^R DEVELOPMENT T0SHIBA CM0S D|GITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SZ08AFE 2 INPUT AND GATE FEATURES • High Output Drive : ±24mA Typ.) @ V CC = 3 V • Super High Speed Operation : tpo 2.7 ns (Typ.) @ V CC = 5 V, 50 pF
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TC7SZ08AFE
TC74LCX
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC7SZ00AFE fuND^R DEVELOPMENT T0SHIBA CM0S D|GITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SZ00AFE 2 INPUT NAND GATE FEATURES • High Output Drive : ±24mA Typ.) @ V CC = 3 V • Super High Speed Operation : tpo 2.4 ns (Typ.) @ V CC = 5 V, 50 pF
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TC7SZ00AFE
TC74LCX
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC7SZ32AFE fuND^R DEVELOPMENT T0SHIBA CM0S D|GITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SZ32AFE 2 INPUT OR GATE FEATURES • High Output Drive : ±24mA Typ.) @ V CC = 3 V • Super High Speed Operation : tpo 2.4 ns (Typ.) @ V CC = 5 V, 50 pF
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TC7SZ32AFE
TC74LCX
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC7SZ02AFE fuND^R DEVELOPMENT T0SHIBA CM0S D|GITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SZ02AFE 2 INPUT NOR GATE FEATURES • High Output Drive : ±24mA Typ.) @ V CC = 3 V • Super High Speed Operation : tpo 2.4 ns (Typ.) @ V CC = 5 V, 50 pF
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TC7SZ02AFE
TC74LCX
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Untitled
Abstract: No abstract text available
Text: DALLAS DS2064 8K x 8 Static RAM s e m ic o n d u c t o r FEATURES PIN ASSIGNMENT • Standby current 50 nA max at tA = 25°C V cc = 3.0V 100 nA max at tA = 25°C Vc c = 5.5V 1 |iA max at t* = 60°C V cc = 5.5V • Full operation for V cc = 4-5V to 5.5V • Data Retention Voltage = 5.5V to 2.0V
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DS2064
28-PIN
2L1413D
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3055 smd
Abstract: MC10H181 PACKAGE DIMENSIONS CASE 751-03
Text: M M O T O R O L A Military 1668 Dual Clocked Latch ELECTRICALLY TESTED PER: MPG 1668 (- 30°C to + 85°C) H • P q = 220 mW typ/pkg • tpd = 1.6 ns typ (510 ohm load) = 1.8 ns typ (50 ohm load) i Symbol Min Max Unit Power Supply Voltage (V cc = °) V cc
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tyco 17105-3608
Abstract: 17105-3608 42802 42802-1 a 315j pa 17105-3608
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 - LOC ALL RIGHTS RESERVED. AF DIST R E V IS IO N S 50 DESCRIPTION AF 06APR 06 REV PER ECR—0 5 —017287 S U P P LIE D IN LOOSE HMR JR PIEC E cc ± 0 .7 6
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06APR06
030-I
31MAR2000
tyco 17105-3608
17105-3608
42802
42802-1
a 315j
pa 17105-3608
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N4211
Abstract: ECR-05-017287
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 - LOC ALL RIGHTS RESERVED. DIST AF R E V IS IO N S 50 DESCRIPTION AM REV PER ECR—05—017287 06APR 06 C O N TIN U O U S STRIP ON HMR JR REELS. cc ± 0 .7 6
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06APR06
030-I
31MAR2000
N4211
ECR-05-017287
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OC-254
Abstract: No abstract text available
Text: FEATURES & J CC DC - 450 MHz 50i2 or 7 5 Q Terminations 20 Watts CW MODEL NO 100C0612 SP3T RELAY Non-Reflective SP3T SMA Connectors J2 J1 J3 50 a .X X .X X X O • .02 ■ .010 TYPICAL PERFORMANCE ft 1.8 r 0.8 GUARANTEED PERFORMANCE A T 25“ C 120 PARAMETER
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100C0612
OC-254)
OC-254
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Untitled
Abstract: No abstract text available
Text: _Technical Data CD54/74AC151 CD54/74ACT151 Advance Information 8-Input Multiplexer Type Features: • Buffered inputs m Typical propagation delay: 6 ns @ l/cc - 5 V, Ta = 25° C, CL = 50 pF vCc = '« GN D = 8 F U N C T IO N A L D lA G R A M '9 2 c 5 ' 3S43l
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CD54/74AC151
CD54/74ACT151
3S43l
CD54/74ACT151
CD74AC151
CD74ACT151
16lead
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crcw FRT1
Abstract: NSC87108 CRCW VJ1206Y474JXXMT 685X CRCW-1206-7R00-F-RT1 293D
Text: VISHAY ▼ Vishay Telefunken Application examples Ï V cc IRRX1 NSC87108 IRSLO IRTX 38 37 39 r2 R, 50 Ohm Ohm TFDS6500 IRED C IRED A RxD TxD VCC SD GND GND 4 =0, GND O— J=C2 I 470 nF I 6.8 pF F igure 3. A p p lic a tio n E xa m p le u sing N S C 87108 Comp.#
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TFDS6500
NSC87108
CRCW-1206-50R00-F-RT1
CRCW-1206-7R00-F-RT1
VJ1206Y474JXXMT
9016B2T
PC87338VLJ
crcw FRT1
NSC87108
CRCW
685X
293D
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MIL-S-3950
Abstract: 2TL1-50
Text: LO yj cc LJ co MICRO SWITCH FREEPO RT. ILLINO IS. A DIVISION OF C A T A L O G L IS T IN G 2TL1-50 SERIES SWITCH-TOGGLE U S A HONEYWELL MILITARY STANDARD NUMBER CHART 1 FED. MFG. CODE *1920 T H IS D R A W IN G C O V E R S A P R O P R IE T A R Y IT E M A N D IS T H E P R O P E R T Y O F M IC R O S W ITC H . A D IV IS IO N OF
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BI94432
2TL1-50
MIL-S-3950
MIL-S-3950
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Untitled
Abstract: No abstract text available
Text: 2 7 LD OT LD .O O <J E D □ 0-5^^o CAMBER s 0.5 MAX. , J - J ' / h N O . H NO." 1 D m CIRCUIT NO.: I ONLY. 43.56 39.6 35.64 3 1.68 27.72 23.76 19.8 15.84 1.88 7.92 3.96 B <r cc O < * CJ m JtC x T N O . CAVITY NO. o o o CJ cE: i— Ld 09- 50 > - 12 i I
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MXJ-32
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5566 molex
Abstract: 24B2
Text: 13 12 10 .50 .0 7 0 1.78 L A S T C IR C U IT „38 (9.6) O P T IO N A L DRAIN HOLES C IR CU IT S IZ E .0 7 3 ( 1.85) (5.5 0) C IR CU IT ± .0 0 3 20 22 .14 (3.5) vjy \|/ \|/ \|/ 24 (4.2 0± . 10) N O N -A CC U M U LA TIVE PRODUCT S P E C IF IC A T IO N AND PROCESSIN G P A R A M E T E R S ;S E E P S - 5 5 5 6 - 0 0 I
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SDA-5566-N
5566 molex
24B2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30SM-06 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX S 3 { 3.2 * 5.45 10V D R IV E V d s s . 60V rDS ON (MAX). 30m i2
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FS30SM-06
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30KM-06 HIGH-SPEED SWITCHING USE FS30KM-06 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 - 2 .8 1 0 .2 r 10V D R IV E V d s s . 60V rDS ON (MAX). 30m i2
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FS30KM-06
30mi2
O-220FN
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS50VS-06 HIGH-SPEED SWITCHING USE FS50VS-06 OUTLINE DRAWING I q J w e Q w r 6 +i CO C\i q w e r 10V DRIVE V d s s . 60V Dimensions in mm q o - GATE
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FS50VS-06
O-220S
571Q-22
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS50UM-06 HIGH-SPEED SWITCHING USE FS50UM-06 OUTLINE DRAWING Dimensions in mm 4.5 1.3 ILI U LU qwe q w e r 10V DRIVE V d s s . 60V q o- GATE DRAIN SOURCE
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FS50UM-06
O-220
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