CD 4011 BE Search Results

VEB mikroelektronik

Abstract: 4011 BP TOSHIBA V40511D Mikroelektronik Information Applikation mikroelektronik Heft 12 mikroelektronik Heft SCL4001BE information applikation mikroelektronik SCL4030BE SCL4011BE
Contextual Info: ö=ü ] k :n ^ G le l- c t 3 n o n il- c Integrierte Schaltkreise Funktion und Einsatzmöglichkeiten CMOS-Logikschaltkreise V 4001 D, V 4011 D, V 4012 D, V 4023 D und V 4030 D CM OS - Logikbaureihe V 4 0 0 0 D Heft 2 Funktion und Einsatzm öglichkeiten der

567d

Abstract: 1N6492 1N6492U4
Contextual Info: INCH-POUND MIL-PRF-19500/567D 8 February 2008 SUPERSEDING MIL-PRF-19500/567C 12 September 2003 The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 May 2008. PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON,

UB8830D

Abstract: u125d UB8820M ub 8820 u880 UL7211D ub 8840 MC 4011 BCP U806D UB8840M
Contextual Info: in n flkän X □ n i Typenübersicht TkinOBOM 0D30p Fertigungsprogram m n pOH3BOACTBeHHaa nporpaMMa Das vorliegende H eft soll dem Zweck dienen, U e/ibto npeflCTaB/ieHHOM npocneKTa-TeipaAn AB/iaeTcs» einen Überblick über das Erzeugnissortim enten H a lb ­

Contextual Info: DIMENSIONS IN INCHES MILLIM ETERS DO NOT SCALE DRAWING . PANEL .825 +.010 ( 20.96 + . 2 5 ) .756 .640 -1 ( 16 .2 6 ) + .005 -.000 MATERIAL: ROCKER KNO B- Nylon 9 4 V - 2 HOUSING- Nylon 9 4 V - 2 TER M IN A L/S T A TIO N A R Y /M O V IN G CONTACT- Copper alloy,

DIODE 1N3768-R

Abstract: diode 1N1188 1N1184 1N1184R 1N1186 1N1186R 1N1188 1N1188R 1N1190 1N3766
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 2007. INCH-POUND MIL-PRF-19500/297G 25 July 2007 SUPERSEDING MIL-PRF-19500/297F 19 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

1N3291

Contextual Info: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 October 2012. MIL-PRF-19500/246K 20 July 2012 SUPERSEDING MIL-PRF-19500/246J w/AMENDMENT 1 8 March 2012 PERFORMANCE SPECIFICATION SHEET

1N3289

Abstract: 1N3291 1N3293 1N3294 1N3295 DO-205AA 1N3289R
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 18 April 2010. INCH POUND MIL-PRF-19500/246J 18 January 2010 SUPERSEDING MIL-PRF-19500/246H 10 October 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

clare mercury-wetted relay

Abstract: CP Clare RELAY hgp clare mercury mercury-wetted contact relay 1N3909 1N3909A 1N3910 1N3910A 1N3911 1N3911A 1N3912
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 November 1999 INCH-POUND MIL-PRF-19500/308C 1 August 1999 SUPERSEDING MIL-S-19500/308B 7 April 1989 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST-RECOVERY

1N1124A

Abstract: 1N1126A 1N1128A 1N1202A 1N1204A 1N1206A 1N3649 1N3671A 1N3673A DIODE 1N1206A
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 26 April 2010. MIL-PRF-19500/260L 26 January 2010 SUPERSEDING MIL-PRF-19500/260K 14 March 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

CD 4016 ic testing method

Abstract: MA46589
Contextual Info: ML46580S-992 M/A-COM Preliminary Specifications High Reliability Semiconductor - Beam Lead Gallium Arsenide Tuning Varactor Diode Features • • • • • Package Outline Constant Gamma of 1.25 Strong Beam Construction Low Parasitic Capacitance High Q

CP CLARE hg 1004

Abstract: 1N3888 UNF-2B 01903 1N3886 clare mercury-wetted relay hgp1004 1n3880r 1N3884 diode 1n3893
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 November 1999. INCH-POUND MIL-PRF-19500/304D 15 August 1999 SUPERSEDING MIL-S-19500/304C 6 June 1989 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY

mmc 4011 E

Abstract: kdt 633 10Q18 photometer BV1010
Contextual Info: ‘*,. ?dIL-s-195m/467 25 January 1672 MIUTARY SEIKICONDUCTQR sPECIFICATIDN DEVICE, DIODE, TYPES JAN1N57S5 TW speculation ~Immt8 and 1. AND JANTXlN3703 LS mandatory &s 1.2 P@lcal 1.S ?daxfmum ent specifbxtton dbmfs!simns. covers by all &par tof Defense. See figure

TCA4401

Abstract: CD 4049 BP TCA440 IC CD 4027 diode zener BZX 61 C 10 tda4050 LD57C diode BAY61 receiver tca440 BAY61
Contextual Info: Remote Control Appnote 34 1. Simple Infrared Remote Control with Low Current Consumption gate 1 drops below the minimum H-level threshold and thus the oscillation is interrupted. The time constant of R1C1-circuit is dimensioned for a burst length of 1 ms. The 1 nF capacitor,

1N5812 diode

Abstract: 1N5812 1N5812R 1N5814 1N5814R 1N5816 1N5816R UNF-2A 190-32 UNF
Contextual Info: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 April 2009. MIL-PRF-19500/478J 27 January 2010 SUPERSEDING MIL-PRF-19500/478H 11 March 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY,

4093 BP

Abstract: cd 4093 equivalent V40098D V40511D 40511 4017 BP MC 4011 BCP MC 4093 ZUD 132 ci 4093 equivalent
Contextual Info: i iriilk if^ B c lG l-c te n a n il-i Übersicht CMOS-Schaltkreise CMOS-IC’s Übersicht CMOS-Schaltkreise - CMOS-IC’s V4001 D V 4007 D V4011 D V 4012 D V 4013 D V4015D V4017D V4019D V 4023 D V 4027 D V 4028 D V 4029 D V 4030 D V 4034 D V 4035 D V 4042

MOLEX mxj a1

Abstract: CD 4011 IC SH77J mxj a1
Contextual Info: \l m 9 i/ 6.9 (tr^ ) (PI TCH ) DETAIL (SCALE 2 .2 5 2 .2 5 0.75 118.0 114.7 109.6 102 102 1.5 1.5 110.5 107.2 102.1 96 93 2 .2 5 0.75 0.75 2 .2 5 103.0 9 9 .7 94.6 87 87 ^ 60 1.5 1.5 9 5 .5 9 2 .2 87.1 81 78 -5511 55 2 .2 5 0.75 88.0 8 4 .7 79.6 72 72 -5011

valvo halbleiter

Abstract: SCL4028BE tesla schaltkreise applikation heft information applikation V4001D aiken analoge schaltkreise V4011D 4029D
Contextual Info: m iö lk in ö e le l-c t e n a n ilK Integrierte Schaltkreise Funktion und Einsatzm öglichkeiten CMOS-Logikschaltkreise V 4028 D, V 4035 D und V 4 0 4 2 D CMOS - Logikbaureihe V 4 0 0 0 D Heft 4 Funktion und Einsatzmögiichkeiten der C M O S -L o g ik sc h a ltk re ise

FED-STD-H28 chamfer

Abstract: 1N6304 1N6305 1N6306 DO-203AB
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 January 2008. INCH-POUND MIL-PRF-19500/550C 18 October 2007 SUPERSEDING MIL-PRF-19500/550B 20 October 1998 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST-RECOVERY, HIGH CURRENT,

cd 3313

Abstract: transistor lr 3303 BDXXX trimmers 3386 LR 3303 mt 7813 3292 bourns BDXXXX bourns 6574 ci 7814
Contextual Info: RoHS-COMPLIANT COMPONENTS ROADMAP RoHS-compliant refers to no Pb, Cd, Cr+6, Hg, PBB or PBDE unless use exempted or within allowable limits. Bourns Product Line CAT CAY Chip Beads MA, MH, MG, MU, MT, MZ Chip Diodes CD0402, 0603, 0805, 1005, 1206, 1408, 2010, 2419, SOD323,

ic 4016

Abstract: 1N3206 DIODE PK IN 4001 MIL-STD-750 METHOD 2036 1n4373 MIL-STD-750 METHOD 2036 CONDITION E MIL-S-19491 D253S IC 4011 details
Contextual Info: MIL SPECS 0000155 NOTICE OF VALIDATION 000253*4 T | INCH-POUND MIL-S-19500/195D NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, MICRO-MINIATURE, SWITCHING TYPE 1N3206 Military specification MIL-S-19500/195D, dated 6 August

CD 4538

Contextual Info: 10 COPERCHIO ALZATO: I CONTATTI SONO APERTI PER UN AGEVOLE INSERIMENTO DEL CIRCUITO FLESSIBILE f COVER UP: COIfTACTS ARE OPEN FOR AN EASf INSERTION OF THE FlEX CIRCUfTRf i C O PERCHIO ABBASSATO: CIRCUITO FLESSIBILE SPESSORE TIPICO FlEY CIRCUfTRf (TIPYCAL THICKNESS)

DIODE 1N1206A

Abstract: 1n1124r 1N1124A 1N1126A 1N1128A 1N1202A 1N1204A 1N1206A 1N3649 1N3671A
Contextual Info: INCH-POUND MIL-PRF-19500/260F 10 December 1999 SUPERSEDING MIL-PRF-19500/260E 6 August 1999 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A AND AR VERSIONS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC

4N23A JANTXV

Abstract: 4N24A 4N24 opto transistor tl 4311 4N22 4N22A 4N22U 4N23 4N23A 4N23U
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 October 2009. INCH-POUND MIL-PRF-19500/486G 22 July 2009 SUPERSEDING MIL-PRF-19500/486F 15 September 2005 PERFORMANCE SPECIFICATION SHEET COUPLER, OPTO ELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE,

MC 3041 opto

Abstract: 4N47A 548D 4N48U JANTXV 4N49 JANTXJANTXV 4N49U JANTX JANTXV 3041 OPTO 4N49 opto 4N47U JANTX federal isolator
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. MIL-PRF-19500/548D 8 June 2001 SUPERSEDING MIL-PRF-19500/548C 10 October 1997 PERFORMANCE SPECIFICATION COUPLER, OPTO ELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE