CE 5302 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

4116 2n

Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
Contextual Info: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE

jrm a55

Abstract: tip 0ff 0401 ANALOG irf 5630 ko 224 4K tantalum capacitors jrm a45 irf 7408 bt 4840 pinout diagram A9F7 29 INCH crt tv FBT pinout chassis 3111 253 3266 2e jrm A45
Contextual Info: PR E FA C E T he IBM P erson al C o m p u te r T ech n ical R eferen ce M anual is designed to pro v id e h ard w are design an d in terfa ce in fo rm atio n . T h is p u b licatio n also provides B asic In p u t O u tp u t S y stem B IO S in fo rm atio n as w ell as p ro g ram m ing su p p o rt m a tter.

pinFET

Abstract: InGaAs Photodiode 1550nm PIN photodiode responsivity 1550nm 1.1 LDPF0120 1550nm photo detector
Contextual Info: £> — •=■ ■ a r-v-n o LDPF-XXXX SERIES LASER DIODE, INC. 2ÔE D LASER DIODE INC 5302^05 DDOOSSb Ö ILAD PINFET OPTICAL RECEIVER FEATURES: £> InGaAs PIN D etector p- Low C a p a cita n ce 0.5pf Low Dark Current 5nA High Spectral Responsivity t> Low Noise GaAs FET

intel 8086 instruction set

Abstract: BIOS 686 AMIBIOS laptop chip level repairing ATMEL BIOS 7135 PASSWORD CODE 8086 interface 8255 686 ami bios ali m1487 ami bios 686 Programmers Guide to the AMIBIOS 686 amibios
Contextual Info: Embedded BIOS 4.1 TM The Full-Featured BIOS for Embedded Systems and Consumer Electronics* OEM Adaptation Guide with BIOS Interrupt Reference "The most configurable BIOS available" Now CE ReadyTM and Includes BIOStartTM * This material is provided as a product component for the EMBEDDED BIOS Adaptation

intel 8086 INSTRUCTION SET

Abstract: m6117 ALI chipset M1487 amibios 686 q 686 amibios 1999 BIOS 686 AMIBIOS amibios 586 Programmers Guide to the AMIBIOS 360ACD 8255 keyboard Controller
Contextual Info: Embedded BIOS 4.2 TM The Full-Featured BIOS for Embedded Systems, Handheld, Mobile, and Consumer Electronics* OEM Adaptation Guide with BIOS Interrupt Reference "The most configurable BIOS available" * Now CE ReadyTM Includes BIOStartTM This material is provided as a product component for the EMBEDDED BIOS Adaptation

BD368

Abstract: MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5629 2N5631
Contextual Info: NPN PNP v CEO V o lts M in./M ax. •c Am p V CE sat @ >C V o lts Max. Am p. f T MHz PD Case Watts le = 16.0 A. MJ4034 BD317 2N 5629 M J4035 2N 5630 M J3773 2N5631 MJ4031 BD318 2N6029 M J4032 2 N6030 2N6031 80 100 100 100 120 140 140 1 0 0 0 /2 5 /25 /10 0

PNP 2SD

Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
Contextual Info: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK­ AGE 2N 3054 2N 3055

2N3303

Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any

F3448

Abstract: F68488 F6800 F68488CP F68488DL F68488P
Contextual Info: F68488 General-Purpose Interface Adapter FAIRCHILD A S c h lu m b e rg e r C o m p a n y M icro p roce sso r P roduct D e s c r ip tio n T h e F6 8 4 88 G e n e ra l-P u rp o s e In te rfa ce A d a p te r G P IA p ro v id e s the m e a n s to in te rfa c e b etw e e n a n IE E E -4 8 8

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. 5302C Construction Diameters (In) 1) Component 1 12 X 1 COND a) Conductor 24 (7/32) AWG TC 0.024 b) Insulation 0.010" Wall, Nom. PVC, Semi Rigid

Contextual Info: 8368602 SOLITRON DEVICES INC~^1 olitron DE Jfl3bñbOS ODOlHm ñ 7 — 3 3 “/? Devices, Inc. S P E C I F I C A T I O N S M AXIM UM R ATIN G S Voltage, Collector to Base VCB0 NO.: 2N 5302 TYPE: NPN E P I CASE: T O -3 60 . . Collector Current (lc) .

Contextual Info: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N 5301 2N 5302 2N 5303 H igh-P ow er NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • • • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON

en 61558

Abstract: transformer EN 61558 TOROIDAL transformer specification 4D28 150va transformer
Contextual Info: I B L lighting UK Technical Data Sheet Maintenance Free To roidal Tr a n s fo r m e rs MF Tr a n s f o r m e r 2 0 0 VA Part Codes: 5302.00 code 5302.00 Features M e chanical Specification Maintenance free safety isolating toroidal transformers are ideally suited for commercial

2n5302

Abstract: 2N5301 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N 5302 2N 5303 H igh-Pow er NPN Silicon lYansistors ‘Motorola Prtftrrxi D*vlc* . . . for use in power amplifier and switching circuits applications. • H ig h Collector-Emitter Sustaining Voltage — VcEO sus = 80 Vdc (Min) @ lc = 200 mAdc (2N5303)

42-PIN

Contextual Info: LH5324A00 CMOS 24M 1.5M x 16 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 1,572,864 words × 16 bit organization • Access time: 150 ns (MAX.) • Power consumption: Operating: 357.5 mW (MAX.) Standby: 550 µW (MAX.) • Static operation • TTL compatible I/O

2n5302

Abstract: 2n5301 2n5303 200WATT TRANSISTOR 2n5302
Contextual Info: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N 5301 2N 5302 2N 5303 H igh-P ow er NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON

AWPn

Abstract: JG30 CXK58257B
Contextual Info: SONY CXK58257BTM/BYM/BP/BM -55LL/70LL/10LL 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BYM/BP/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits. A polysilicon TFT cell technology realized extermely

MBM27C256A-25W

Abstract: fujitsu uv erasable eprom MBM27C256A MBM27C256A-25
Contextual Info: CMOS UV ERASABLE 262144-BIT READ ONLY MEMORY CMOS 262144 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY MBM27C256A-20-W MBM27C256A-25-W Decem ber 1987 E d itio n 1.0 The Fujitsu MBM 27C 256A is a high speed 262,144 bits com plem entary MOS

Germanium drift transistor

Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
Contextual Info: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of

Contextual Info: SONY CXK5V8257BTM/BYM/BM •70LLX/85LLX*/1 OLLX* 32768-word x 8-bit High Speed CMOS Static RAM * Only TSOP available * * Only SOP available D escription The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits.

29lv800a

Contextual Info: AMDZ1 A m 29L V 116B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and

24M-BIT

Contextual Info: CMOS 24M 1.5M x 16 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 1,572,864 words x 16 bit organization 42-PIN DIP TOP VIEW • Access time: 150 ns (MAX.) • Power consumption: Operating: 357.5 mW (MAX.) Standby: 550 nW (MAX.) • Static operation • TTL compatible I/O

DT28F016SV080

Contextual Info: in t e i 16-MBIT Flash File MEMORY 28F016SV Includes Commercial and Extended Temperature Specifications • Sm artVoltage Techn o logy — U ser-Selectab le 3.3 V or 5 V V c c — U ser-Selectab le 5 V or 12 V V PP ■ Backw ards-Com patible with 28F016SA ,