CE SOT23 Search Results

Contextual Info: Transistors SMD Type PNP Transistors 2SB1198K SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low V CE sat .V CE(sat) =-0.2V 1 BVC EO=-80V 0.55 ● High berakdown voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 V CE(sat)=-0.2V 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: Product specification 2SB1198K SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low V CE sat .V CE(sat) =-0.2V 1 BVC EO=-80V 0.55 ● High berakdown voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 V CE(sat)=-0.2V 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1

marking code ce SOT23

Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Contextual Info: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A

Contextual Info: ZXTD6717E6 COM PLEM ENTARY NPN/ PNP LOW SATURATION DUAL TRANSISTORS SUM M ARY NPN: V CEO=15V; V CE sat =0.1V; IC= 1.5A; PNP: V CEO=-12V; V CE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very

Philips FA 291 AMPLIFIER

Abstract: Philips FA 297 AMPLIFIER DECT RF Transceiver 1.9 ghz SC28 TZA3030 TZA3040 AB1432 SC28L198
Contextual Info: Philips Sem iconductors FUNCTIONAL INDEX IC19: ICS FOR DATA COMMUNICATIONS P re fa ce .

KN3903S

Abstract: KN3905S
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KN3903S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM • Low Leakage Current • Ic E x = 5 0 n A M a x . , @ V ce -3 0 V , V eb -3 V . • Low Saturation Voltage : V cE (sat)=0.3V (M ax.)

KSC3488

Abstract: KSC853 KSA953 KSC815
Contextual Info: FUNCTION GUIDE TRANSISTORS SOT-23 Type Transistors Continued Condition Device and Polarity (Marking) NPN lc V ce lc (V) (A) (V) (mA) MIN MAX PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) KST4126(C3) BCW29(C1) BCW31(D1) 1.1.2 V cE<*at), VBE tsatX V )

mmta56

Contextual Info: SOT23 M E D IU M POWER TRANSISTORS NPN Pinout : 1-Collector, 2-Emitter, 3-Base hFE Type v CBO V v CEO V mA v CE(sat) Plot mW M in /M ax at Iq/V ce mA/Volts M ax V olts at Ic/I b mA ft TYP MHz BCX41 125 125 800 330 63/- 100/1 0.90 300/30 100 F M M TA 06 80

4606 inverter ic

Abstract: XC6210C mosfet 4459 XC6210 XC6210A XC6210B XC6210D 12Represents marking 6B E5 Marking sot-23-5
Contextual Info: XC6210 Series •PIN CONFIGURATION VOUT 5 VOUT NC 4 VIN 5 2 1 3 VIN VSS CE 4 1 2 CE VSS SOT-25 TOP VIEW 3 NC SOT-89-5 (TOP VIEW) USP-6B (BOTTOM VIEW) *Please use the circuit without connecting the heat dissipation pad. If the pad needs to be connected to

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

2SC4370A

Abstract: 2SC3875S 2SA1504S 2SC3227 BC548 ,BC558 2SA1267 bc557 2SA1504 BC337/BC327 2SC3202
Contextual Info: 1 Transistors Maximum Ratings KOREA Electrical Characteristics Ta—25°C Type No NPN PNP Ic Pc (V) (mA) (mW) 150 I’fe MAX ^CE (V) Ic (mA) (V) 7 0^700 6 2 0.25 100 fT I« (mA) (MHz) (TYP) MIN ^CE (V) NF IC (mA) (TYP) MAX (dB) VCE (V) •c (mA) f (KHz)

sot89 AE pnp

Abstract: AE SOT223 PMBT4401
Contextual Info: 96 Surface Mount Devices General Purpose Transistors cont. Ratings hFE v CE(sat) min./max. at Iq /V Ce max. at l(j^B V mA/mA Pinout See Section VII v CEO V VCBO V •c Package BCW70 BC807W BC857W BCP52 BCX52 SOT-23 SOT-323 SOT-323 SOT-223 SOT-89 45 45 45

BST60

Contextual Info: 98 Surface M ount Devices Darlington Transistors cont. Type % EG V Package v CE(sat) hFE Ratings v CBO V *C ' jnA1’^ 45 45 60 60 80 80 500 500 500 500 500 500 »T max. at lç/lg min. at Ig'V CE V mA/V MHz mA/mA Pinout See Section VII PNP (cont.) BSP60

RP173N

Abstract: RP173K
Contextual Info: RP173x Series Low Supply Current 150mA 11V Input LDO The RP173x Series are CMOS-based LDO regulators featuring 150mA output and low supply current of Typ. 2.0 A. RP173x Series are suitable for the power source such as the equipment being in the standby-mode. A version with CE input pin has reduced CE pull-up

Contextual Info: DW01M-DS-12_EN DEC 2010 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.2 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation

Contextual Info: I t,S0113D Pro Electron Surface Mount Bipolar Devices Device No. SOT-23 Mark Case Style 0040554 VCES* V VEBO VCBO CEO (V) (V) (V) Min Min Min I * ' ces 'C B O (c o n tin u e d ) v h fe V CB <nA) Max (V) h fa Min @ Max 'c (m A ) & V CE(SAT) & V CE (v) Max

BT4403

Abstract: MBT3906
Contextual Info: Surface Mount Transistors NFN Transistors/SOT23 M a rk in g C ode* V CEO 1P 1N 2X 40 40 40 M M B TA 05 M M B TA 06 M M B T5551 1H 1G 3S M M B T A 42 1D Type N um ber M M BT2222A IM B T /M M B T 3 9 0 4 M M B T4401 h FE @ VCE/IC V CE SAT @ Ic /lß fT @ V ce/I c

DW01HA-x

Abstract: DW01HA-DS-13_EN
Contextual Info: DW01HA-DS-13_EN JAN 2014 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet DW01HA One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01HA FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation

RP173K

Abstract: RP173N SOT-23-5 VF
Contextual Info: RP173x Series Low Supply Current 150mA 11V Input LDO with Reverse Current Protection The RP173x Series are CMOS-based LDO regulators featuring 150mA output and low supply current of Typ. 2.0 A. RP173x Series are suitable for the power source such as the equipment being in the standby-mode. A version with CE input pin has reduced CE pull-up

tl4311

Abstract: TL431M1 TL431 8pin TL431 sot89 TL431N tl4316 TL431 application TL431 IT TL431 tl431 application circuits
Contextual Info: SEMICONDUCTOR E x ce lle n ce in A n a lo g P o w er P ro d u c ts TL431 Precision A djustable Shunt Regulator FEATURES APPLICATIONS • • • • • • • • • • • • • • Trim m ed Bandgap to 1% W ide O perating C u rre n t. 1mA to 150mA

S2804

Abstract: sot-23 297 AS2804
Contextual Info: SEMICONDUCTOR E x ce lle n ce in A n a lo g P o w er P ro d u c ts AS2804 Micropower SOT-23, 50 mA Low-Dropout Voltage Regulator, Bypass & ON/OFF Switch FEATURES APPLICATIONS • • • • • • • • • • • • • • • • Low Quiescent C urrent .500|aA @ 30mA Output

Contextual Info: DW01M-DS-15_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.5 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation

Contextual Info: DW01M-DS-13_EN APR 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation

Contextual Info: FS312F-G-DS-11_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.1 Datasheet FS312F-G One Cell Lithium-ion/Polymer Battery Protection IC FS312F-G FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation