CE-AX SUN Search Results

Contextual Info: SUNCON Aluminum Electrolytic Capacitors • This series has 10 to 2 0% less impedance with same package than CE-AX series. • 105T . 1.000 to 2.000hrs. • Solvent proof within 2 minutes) • Specifications Items Condition Specifications Rated voltage (V)

Contextual Info: SUNCON o > •§ 5 g 3. 2. 5 S | CO 3 m a3 CD % o • This series has 10 to 20% less impedance with same package than CE-AX series. • 105T!, 1,000 to 2,000hrs. • Solvent proof within 2 minutes ■ Specifications Items Condition Rated volta ge (V) Surge vo lta g e

TO-3P

Abstract: KSD1417 KSB1022 KSD1413 KSB1023 KSB1098 KSD1589 TIP140 TIP140F TIP145
Contextual Info: SAMSUNG ELECTRONICS INC büE D • 7 ^ b m M E GG1153b b ^ TRANSISTORS ■ SMäK FUNCTION GUIDE 22.4 TO-22CKF Type Transistors lc Condition D w ice Type V ceo NPN PNP lc <A> MIN V CE satXV) Condition TYP Vct (V) Condition hra Vee (V) M AX fl{MHz) Pc lc (A)

Contextual Info: CARD E D G E C O N N EC TO R S 1258 series •FEA TUR ES % 3.96mm contact centersi 'Dual lead% Canti-lever contacts Accepts 1.6mm thick board ■SPECIFICATIONS C u rren t R a tin g : 3A C o n tac t R e sistan ce : 16m£2 m ax. D ielectric W ith sta n d in g V o lta g e :

RNI55W

Contextual Info: Photodetector Sun 3mm Photodetector RNI30W Water Clear Lens Absolute Maximum Rating 25°C unless otherwise notes Collector to Emitter Breakdown Voltage 30V V br c e o Emitter to Collector Breakdown Voltage 5V Operating Temperature Range - 40 - + 85“C Lead Soldering Temperature (4mm for 5 Sec)

Contextual Info: SAM SUN G E L E C T R O N I C S INC 4SE D El T'ìbmMS GGlllMM 2 • S N G K KM23C4100 CMOS MASK ROM T W G ' 3 - i 5 - 4M-Bit (512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w ltchable organization Byte M ode: 524,288 x 8 W ord Mode: 26 2,14 4x16

Contextual Info: KMM372F400BK/BS KMM372F41OBK/BS DRAM MODULE KMM372F400BK/BS / KMM372F41 OBK/BS Fast Page with EDO Mode 4M X 72 DRAM DIMM with ECC using 4Mx4, 4K/2K Refresh, 3.3V GENERAL DESCRIPTION T he Sam sung RAM high K M M 3 7 2 F 4 0 1 0 B d e n s ity K M M 3 7 2 F 4 0 (1 )0 B

Contextual Info: SUNCON o > •§ 5 g 3. 2. 5 S | CO 3 m a3 CD % o • 10 5 t!, 1,000 to 2,000hrs. • Solvent proof within 2 minutes ■ Specifications Items Condition Rated volta ge (V) Surge vo lta g e (V) Specifications 6 .3 10 16 25 35 50 8 .0 13 20 32 44 63 CE-BE CE-BD

Contextual Info: DRAM MODULE KMM372V320 8 0BS1 KMM372V320(8)0BS1 Fast Page Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION T he S am sung FEATURES K M M 372V 320(8)0B S 1 is a 32 M x72 bits • Part Identification D ynam ic RAM high de n sity m em o ry m odule. T he S am sung

Contextual Info: S A M SUNG SEMICONDUCTOR INC ' MMESAÖ11C8 «E O | Vil.Ml« 0 0 0 7 2 3 1 î | PHP EPITAXIAL SILICON TRANSISTOR T - a s - a DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Cotlector-Base Voltage Vc8 0 Collector-Em itter Voltage

Contextual Info: KMM374F160 8 0BK1 DRAM MODULE KMM374F160(8)0BK1 EDO Mode without buffer 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION T he S am su ng K M M 374F 160(8)0B K 1 FEATURES is a 16M x72bits • Part Identification D ynam ic RAM high d e n sity m em o ry m odule. T he S am sung

Contextual Info: CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM44C256CL is a CMOS high speed 2 6 2 ,1 4 4 x 4 D ynam ic Random A ccess M em ory. Its de sig n is o p tim ized fo r high pe rform ance ap p lica tio n s

r761 b

Contextual Info: ¥/iïl H EW LE TT* mLtLMPACKARD High Performance Surface Mount Flip Chip LEDs Technical Data : 'Ì' SunPow er Series HSMA-H670/H690/H770/ H790/R661/R761 HSMC-H670/H690/H770/ H790/R661/R761 HSML-H670/H690/H770/ H790/R661/R761 F e atu res A pplications • High B righ tn ess AlInGaP

Contextual Info: KMM372V160 8 0BK/BS DRAM MODULE KMM372V160(8)0BK/BS Fast Page Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • T he S am sung K M M 3 7 2 V 1 6 0 (8 )0 B is a 16M x72bits D ynam ic Part Identification Part num ber

Contextual Info: TAE SUNG D IPPED TANTALUM C A P A C IT O R • S p e c ific a tio n s ^ : -5 5C • Operating Temperature Range ~ +125 C Above 85 °C - with Voltage Derating •Tolerance :± 1 0 % ;± 2 0 % • DC Leakage Current : U £ 0.01 C*Ur pA • Dissipation Factor

Contextual Info: DRAM MODULE KMM5324004BSW/BSWG KMM5324004BSW/BSWG EDO Mode 4M X 32 DRAM SIM M Using 4M x16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES T he S am sung K M M 53 24 004 B is a 4M x3 2b its D ynam ic RAM high de n sity m em o ry m odule. T he S am su ng K M M 53 24 004 B

Contextual Info: FLASH MEMORY KM29W32000TS Document Title 4M x 8 Bit NAND Flash Memory Revision Historv Revision No. Historv Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th Final 1998 The attached datasheets are prepared and approved by SAMSUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right

KMM536256B-8

Abstract: KMM536256B LY 9525
Contextual Info: KMM536256B DRAM MODULES 256KX36 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 3 6 2 5 6 B is a 2 6 2 ,1 4 4 bit X 3 6 Dynamic RAM high density m em ory module. The Sam­ sung K M M 5 3 6 2 5 6 B con sist of eight CMOS 2 5 6 K X 4

Contextual Info: FLASH MEMORY KM29W16000ATS Document T ills 2M x 8 Bit NAND Flash Memory R evision H istory Revision No. History Draft Date Remark 0.0 Initial issue. ApriM 0th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right

YC 2604

Contextual Info: KM41C1000BI­ CMOS DRAM 1M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perfo rm ance range: The S am sung KM41C1000BL is a CMOS high speed 1,048,576 x 1 D ynam ic Random A ccess Memory. Its de­ sign is op tim ize d fo r high pe rform ance ap p lica tio n s

Contextual Info: DRAM MODULE KMM372V404BS KMM372V404BS Fast Page Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4 , 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES T he S am sung K M M 37 2V 4 04 B is a 4 M x7 2 b its D yn am ic RAM Part Identification high d e n sity m em ory m odule. The S am sung K M M 37 2V 4 04 B

Contextual Info: SUNCON Aluminum Electrolytic Capacitors • 1051C, 1.OOOhrs. • Solvent proof within 2 minutes • Specifications Items Condition Speoifications Rated voltage (V) - 6.3 10 16 25 35 50 Surge voltage (V) Room temperature 8.0 13 20 32 44 63 0.14 0.14 Category temperature range fC)

Contextual Info: 19-1095; Rev 2; 12/97 1 -Ce ll t o 3 -Ce ll, H igh-Pow e r, Low -N oise , St e p-U p DC-DC Conve rt e rs Synchronous rectification provides a 5% efficiency improvement over similar nonsynchronous boost regulators. In standby mode, pulse-skipping PFM operation

Contextual Info: DRAM MODULE KMM53616004BK/BKG KMM53616004BK/BKG EDO Mode 16M X 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES T he S am su ng K M M 53 61 600 4B is a 16 M x36 bits RAM high d e n sity m em o ry m odule. T he D ynam ic S am sung