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    Abstract: No abstract text available
    Text: CEP658N/CEB658N CEF658N N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP658N 180V 0.22Ω 16A 10V CEB658N 180V 0.22Ω 16A CEF685N 180V 0.22Ω 16A 10V d 10V Super high dense cell design for extremely low RDS(ON).


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    PDF CEP658N/CEB658N CEF658N CEP658N CEB658N CEF685N O-263 O-220 O-220F O-220/263