Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CEP603AL TRANSISTOR Search Results

    CEP603AL TRANSISTOR Result Highlights (5)

    Part
    ECAD Model
    Manufacturer
    Description
    Download
    Buy
    2SC6026MFV
    PCB Symbol, Footprint & 3D Model
    		 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    PCB Symbol, Footprint & 3D Model
    		 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    PCB Symbol, Footprint & 3D Model
    		 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    PCB Symbol, Footprint & 3D Model
    		 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    3D Model
    		 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    CEP603AL TRANSISTOR Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    cep603al

    Abstract: CEB603AL CEP603A Cep603al Transistor ceb603
    Contextual Info: CEP603AL/CEB603AL March 1998 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 30V , 25A , RDS ON =22m Ω @VGS=10V. RDS(ON)=40m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.


    Original     		CEP603AL/CEB603AL O-220 O-263 cep603al CEB603AL CEP603A Cep603al Transistor ceb603 PDF

    cep603al

    Abstract: CEB603AL Cep603al Transistor CEP603A
    Contextual Info: CEP603AL/CEB603AL March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 2 5 A , R ds on =22 iti Q @ Vgs= 1 0V. @ Vgs=4.5V. R ds (ON)=40itiQ • Super high dense cell design for extremely low Rds(on). • High power and current handling capability.


    OCR Scan     		CEP603AL/CEB603AL 22itiQ 40itiQ O-220 O-263 to-263 to-220 cep603al CEB603AL Cep603al Transistor CEP603A PDF