CERAMIC PHOTODIODE CASE 13 Search Results

VTB9412BH

Contextual Info: VTB Process Photodiode VTB9412BH, 9413BH PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package

Contextual Info: VTB Process Photodiode VTB9412BH, 9413BH PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package

Contextual Info: VTB Process Photodiode VTB8440H, 8441H PACKAGE DIMENSIONS inch mm CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer

Contextual Info: VTB Process Photodiode VTB9412H, 9413H PACKAGE DIMENSIONS inch mm CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a recessed ceramic package. The chip is coated

Contextual Info: Alternate Source/ Second Source Photodiodes VTD31AAH CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of

VTD31AAH

Abstract: CLD31AA
Contextual Info: Alternate Source/ Second Source Photodiodes VTD31AAH CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of

Contextual Info: VTB Process Photodiodes VTB4051H PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes have very high

VTB4051H

Contextual Info: VTB Process Photodiodes VTB4051H PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes have very high

VTB8440B

Abstract: VTB8440 VTB8441B VTB process photodiodes VTB8441
Contextual Info: VTB Process Photodiodes VTB8440B, 8441B PACKAGE DIMENSIONS inch mm CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared

VTP1188SH

Abstract: VTP11188SH VTP1188
Contextual Info: VTP Process Photodiodes VTP1188SH PACKAGE DIMENSIONS inch mm CASE 12 LENSED CERAMIC CHIP ACTIVE AREA: .017 in2 (11 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic substrate. A clear molded

Contextual Info: VTP Process Photodiodes VTP1188SH PACKAGE DIMENSIONS inch mm CASE 12 LENSED CERAMIC CHIP ACTIVE AREA: .017 in2 (11 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic substrate. A clear molded

Contextual Info: VTP Process Photodiodes VTP8440H PACKAGE DIMENSIONS inch mm CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark

Contextual Info: VTP Process Photodiodes VTP8440H PACKAGE DIMENSIONS inch mm CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark

LXR0082

Abstract: Afonics Fibreoptics 1310nm photodiode
Contextual Info: LXR0082 - 1310nm Fabry Perot Laser Diode - FC/PC compatible receptacle - PCB mounting - High precision ceramic bore AFONICS Performance Highlights - Over 500µW into 9/125µm fibre - Designed for 1.2Gbit/s data rates - Multi-Quantum Well MQW active layer

74ALS180

Abstract: IR LED and photodiode pair e/IR LED and photodiode 5mm
Contextual Info: IBM31T1101 Infrared Transceiver SOIC Highlights • IrDA, HP-SIR and Sharp ASK compatible • Supports IrDA data rates up to 4Mbps • Low profile 16 pin SSOP 1 • 16 LGND I I I 2 15 LEDC I H 3 14 4 13 5 12 6 11 7 10 8 9 NC I H GND m tx m • Minimum external components

9 ELEMENT photoDIODE ARRAY

Contextual Info: SD 219-51-03-301 Blue Enhanced Linear Array Silicon Photodiode PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .758 [19.25] .738 [18.74] .505 [12.83] .128 [3.25] 14 .305 [7.75] .295 [7.49] 13 12 11 14X .165 [4.19] MIN 10 9 8 A B C D E F G H J K L M

Contextual Info: Technology introduction CHAPTER 13 1 Semiconductor process technology 1-1 Silicon process technology 1-2 Compound semiconductor process technology 2 Assembly technology 2-1 2-2 2-3 2-4 2-5 Packages for diverse needs Flip chip bonding Dicing Module products

udt UV100

Abstract: UV-35 UV-20 UDT UDT BNC UV UDT UV-005 UV-005 UV-015 UV-100 UV-100L UV-50
Contextual Info: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes UDT Sensors offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the

MURATA TRIPLEXER

Abstract: BLM15HD182SN1 MLF1608e100k Trompeter CX2038 CX2039 MAX3654 MAX3654EVKIT MAX4240EUK MLF1608E100
Contextual Info: 19-0409; Rev 1; 3/07 MAX3654 Evaluation Kit The MAX3654 evaluation kit EV kit is a factoryassembled printed circuit board (PCB) that provides two circuit versions—optical input and electrical input. The optical circuit includes the photodiode bias circuitry,

Contextual Info: AFCT-57D5ATPZ Digital Diagnostic SFP, 10 km, 1310 nm DFB, 8.5/4.5/2.125 GBd Fibre Channel RoHS-Compliant Optical Transceiver Reliability Data Sheet Introduction FIT Rate Summary Avago Technologies Quality System includes an ongoing Reliability Monitoring program to generate a database

Contextual Info: AFCT-57J7ATPZ Digital Diagnostic SFP, 10 km, 1310 nm DFB, 8.5/4.5/2.125 GBd Fibre Channel RoHS-Compliant Optical Transceiver Reliability Data Sheet Introduction FIT Rate Summary Avago Technologies Quality System includes an ongoing Reliability Monitoring program to generate a database

S1557

Abstract: S1651-01 metal detectors circuits S1671 S2281 S1651 S1406-06 hamamatsu PIN TO5
Contextual Info: HAMAMATSU CORP 4221fe,CH 00024T4 4 • tonæ rnim um n Speciall&Designe Specially Designed Photodiodes Ham amatsu currently produces a variety of special devices such as photodiode/op-amp detectors, TE-cooled photo­ diodes, and linear and mosaic arrays. If your application calls for something special, please contact us with your specific requirements.

PTAV155

Abstract: PTAV622 photodiode Bookham transimpedance amplifier for photodiode ceramic case bookham pin 1300 PTAV155c TA-NWT-000983
Contextual Info: Data sheet Fibre Optic Receiver Features The PTAV series are optical receivers suitable for bit rates from 155 to 622 Mbit/s long and intermediate reach SDH/SONET/ATM single mode applications. They use Bookham Technology one piece fibre alignment technology

S8551

Abstract: S8552 S8553 SE-171
Contextual Info: PHOTODIODE Si photodiode S8551, S8552, S8553 Photodiodes for VUV Vacuum UV detection S8551, S8552 and S8553 are VUV (Vacuum UV) photodiodes suitable for detection of ArF excimer lasers (λ=193 nm). Designed to provide optimal performance in the VUV range, these photodiodes offer more stable sensitivity even after long exposure to VUV radiation compared with